64MX64 Search Results

Contextual Info: 184PIN DDR333 Unbuffered DIMM 1024MB With 64Mx8 CL2.5 TS128MLD64V3J Description Placement The TS128MLD64V3J is a 64Mx64bits Double Data Rate SDRAM high-density Module for DDR333. The TS128MLD64V3J consists of 16pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil

M366S6453DTS

Contextual Info: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: M470L6423DN0 200pin DDR SDRAM SODIMM 512MB DDR SDRAM MODULE 64Mx64 based on sTSOP 32Mx8 DDR SDRAM 200pin SODIMM 64bit Non-ECC/Parity Revision 0.0 May 2002 Rev. 0.0 May 2002 M470L6423DN0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (May 2002) - First release.

RA12

Contextual Info: 64Mx64bits PC133 SDRAM Unbuffered DIMM based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V64636AT8 Series DESCRIPTION The Hyundai HYM72V64636AT8 Series are 64Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen 32Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

hynix HYMD264646B8J-D43

Abstract: HYMD264646b8j-d43
Contextual Info: 64Mx64 bits Unbuffered DDR SDRAM DIMM HYMD264646B8J DESCRIPTION Hynix HYMD264646B8J series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules DIMMs which are organized as 64Mx64 high-speed memory arrays. Hynix HYMD264646B8J series consists of

pc2-4300

Abstract: HYNIX Cross Reference
Contextual Info: 64Mx64 bits DDR2 SDRAM SO-DIMM HYMP564S64 L 8 Revision History No. History Date 0.1 Defined Target Spec. Dec. 2003 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

en 12895

Abstract: DDR200 DDR266
Contextual Info: White Electronic Designs W3EG6464S-JD3-D3 PRELIMINARY* 512MB – 64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6464S is a 64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of eight 64Mx8 DDR

Contextual Info: PC133/PC100 SODIMM M464S6453DKS M464S6453DKS SDRAM SODIMM 64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S6453DKS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

d4385

Contextual Info: 64Mx64 bits Unbuffered DDR SO-DIMM HYMD564M646A L 6-D43/D4/J DESCRIPTION Preliminary Hynix HYMD564M646A(L)6-D43/D4/J series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 64Mx64 high-speed memory arrays. Hynix

Contextual Info: SU5646485D8N0CU June 27, 2006 Ordering Information Part Numbers Description Module Speed SM5646485D8N0CL 64Mx64 512MB , DDR, 184-pin DIMM, Unbuffered, Non-ECC, 64Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination. PC2700 @ CL 2.5 SG5646485D8N0CL 64Mx64 (512MB), DDR, 184-pin DIMM, Unbuffered,

SG564643FG8N6IR

Abstract: DDR2-667-5-5-5 SG564643FG8N6KF SG564643FG8N6IL
Contextual Info: SG564643FG8N6UU May 19, 2008 Ordering Information Part Numbers Description Module Speed SG564643FG8N6DB 64Mx64 512MB , DDR2, 240-pin DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

1376408-1

Contextual Info: SU5646485D8NRCU01 September 23, 2004 Ordering Information Part Numbers Description Module Speed SM5646485D8NRCG01 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, PLL, Non-ECC, 64Mx8 Based (Stacked - two 32Mx8), DDR266A, 35.56mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5

Contextual Info: SU5646485D8N6FU June 27, 2006 Ordering Information Part Numbers Description Module Speed SM5646485D8N6FO 64Mx64 512MB , DDR, 184-pin DIMM, Unbuffered, Non-ECC, 32Mx8 Based, DDR400B, 31.75mm, 22Ω DQ termination. PC3200 @ CL 3.0 SG5646485D8N6FO 64Mx64 (512MB), DDR, 184-pin DIMM, Unbuffered, Non-ECC,

Contextual Info: 64Mx64 bits Unbuffered DDR SDRAM DIMM HYMD264646 L 8-K/H/L DESCRIPTION Hynix HYMD264646(L)8-K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 64Mx64 high-speed memory arrays. Hynix HYMD264646(L)8-K/H/L series

SM5646485D8N0FN

Contextual Info: SU5646485D8N0FN June 27, 2006 Ordering Information Part Numbers Description Module Speed SM5646485D8N0FN 64Mx64 512MB , DDR, 184-pin DIMM, Unbuffered, Non-ECC, 64Mx8 Based, DDR400C, 31.75mm, 22Ω DQ termination. PC3200 @ CL 3.0 SG5646485D8N0FN 64Mx64 (512MB), DDR, 184-pin DIMM, Unbuffered, Non-ECC,

Contextual Info: White Electronic Designs W3EG6464S-D3 PRELIMINARY* 512MB- 64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6464S is a 64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of eight 64Mx8 DDR

Contextual Info: White Electronic Designs W3EG6465S-D3 PRELIMINARY* 512MB - 64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Clock speeds of 100MHz and 133MHz The W3EDG6465S is a 64Mx64 Double Data Rate SDRAM memory module based on 128Mb DDR SDRAM component. The module consists of sixteen 64Mx4 DDR

Contextual Info: W3EG6466S-AD4 -BD4 White Electronic Designs PRELIMINARY* 512MB- 64Mx64 DDR SDRAM UNBUFFERED, w/PLL DESCRIPTION FEATURES The W3EG6466S is a 64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of eight 64Mx8 stack

66 pin tsop package

Abstract: 64Mx64 R20 marking W3EG6465S-D4 DDR200 DDR266 cke 2480
Contextual Info: White Electronic Designs W3EG6465S-D4 PRELIMINARY* 512MB- 64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6465S is a 64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of eight

Contextual Info: Product Specifications PART NO: VL466S6553B-GAS REV: 1.1 General Information 512MB 64Mx64 SDRAM PC133 NON-ECC UNBUFFERED SODIMM 144-PIN Description: The VL466S6553B is a 64M x 64 Synchronous Dynamic RAM high density memory module. This memory module consists of sixteen CMOS 32Mx8 bits with 4 banks Synchronous DRAMs in TSOP-II 400 mil

Contextual Info: M368L2923MTL 184pin Unbuffered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx64(64Mx64*2 bank based on 64Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.2 Jan. 2002 Rev. 0.2 Jan. 2002 M368L2923MTL 184pin Unbuffered DDR SDRAM MODULE Revision History

Contextual Info: M368L6523MTL 184pin Unbuffered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx64 based on 64Mx8 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.2 Jan. 2002 Rev. 0.2 Jan. 2002 M368L6523MTL 184pin Unbuffered DDR SDRAM MODULE Revision History

Contextual Info: M368L6423DTL 184pin Unbuffered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx64(32Mx64*2 bank based on 32Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.1 Jan. 2002 M368L6423DTL 184pin Unbuffered DDR SDRAM MODULE Revision History

Contextual Info: M368L6423BT1 184pin Unbuffered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx64(32Mx64*2 bank based on 32Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.9 June. 2001 Rev. 0.9 June. 2001 184pin Unbuffered DDR SDRAM MODULE M368L6423BT1