Contextual Info: 6 Volt 58.0 AH PS-6580 Features • Absorbent Glass Mat AGM technology for superior performance • Valve regulated, spill proof construction allows safe operation in any position • Power/volume ratio yielding unrivaled energy density • Rugged impact resistant ABS case and cover (UL94-HB)

IEC60068-2-20

Contextual Info: Fuseholders 658 Series Holder and Covers Product Characteristics Compatible Fuse Sizes Materials Clip Terminals: 65800001xxx: Tin Sn plated copper alloy 65800003xxx: Tin (Sn) plated copper alloy 65800004xxx: Gold (Au) plated copper alloy 659 Cover 660 Cover

Contextual Info: 100 20.2 Cartridge Fuse Blocks 12.8 44.4 Ammo Pack Dimensions 658 Series Molded Base Surface Mount Fuse Block For 5x20mm Fuses 380 380 52 Product Characteristics Compatible Fuse 5×20 mm Clip Frame: 65800001xxx: UL94 V-0 Black Thermoplastic 65800003xxx: UL94 V-0 Black LCP

Contextual Info: Coupler, Limiter, Dual Detector ¥ Matched Detector >— c o — w — • ► isolator-Detector Detector Video Amplifier > A/D Threshold Detector ADJUST — 14 Amplifier-Detector - A / D4 V D1 B \ ,D 3 'd3 Phase Detector y \ d 7a , IF . Control Components Division ■21 Continental Blvd., Merrimack, NH 03054-4343 • lei 603) 424-4111 Fax (603) 424-6580

Contextual Info: GM71V S 65803C(CL) 8Mx8, 3.3V, 4K Ref, EDO D e s c rip tio n P in C o n fig u ra tio n Features *8,388,608 W o rds x 8 Bit * Extended Data Out (EDO) M ode C apability * Fast Access Time & C ycle Time (U nit: ns) G M 7 1 V (S )65803 C / C L -5 G M 7 lV (S )6 5 8 0 3 C /C L - 6

xy 801 ic

Contextual Info: - H Y U N D A I • 8Mx64 bit SDRAM Unbuffered DIMM F-Series > PC/100 SDRAM Specification Supporting based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K /SKRefresh 65800A/ 65801 A / HYM7V65830A/ HYM7V65831A DESCRIPTION The HYM7V658Q0A/ 65801 A/ 65830A/ 65831A F-Series are high speed 3.3-Volt synchronous dynamic

CK3121

Contextual Info: •H YU N D A I - • 8MX64 BIT SDRAM UNBUFFERED DIMM R-SERIES ^ PC/100 SDRAM Specification Supporting '' ' based on 4Mx16 SDRAM, LVTTL, 2/4-Banks & 4K/8K Refresh 65800A/ 65801 A/ HYM7V65830A/ HYM7V6S831A DESCRIPTION The 65800A/ 65801 A / 65830A/ 65831A R-Series are high speed 3.3-Volt synchronous dynamic

Contextual Info: G M 71V 65803C G M 71V 65803CL LG Semicon Co.,Ltd. 8,388,608 W ORDS X 8 BIT CM OS DYNAMIC RAM Description Pin C o n fig u ratio n The GM71 V S 65803C/CL is the new generation dynam ic RAM organized 8,388,608 words by Sbits. The G M 7I V(S)65803C/CL utilizes advanced CMOS

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 65809 Construction Diameters (In) 1) Component 1 9 X 1 COND a) Conductor 18 (16/30) AWG BC 0.047 b) Insulation 0.022" Wall, Nom. PVC

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 65805 Construction Diameters (In) 1) Component 1 5 X 1 COND a) Conductor 18 (16/30) AWG BC 0.047 b) Insulation 0.022" Wall, Nom. PVC

6381P1

Abstract: 6581 transistor darlington package to.3 6481P1 6380p1 LAS-6381 transistor TO-3 Outline Dimensions LAS6480P1 LAS6581P1
Contextual Info: LAS 6380, LAS 6480, LAS 6580 8 AMP SWITCHING REGULATORS < FEATURES e • • • DC to lit kHz operation Adjustable output voltage Cycle-by-cycle current limit Internal thermal shutdown Inhibit/enable control pin D ESCRIPTION The LAS 6380/6480/6580 Series are monolithic integrated circuits,

S6R6G6R6GA

Contextual Info: Microwave Synthesizer Model : S6R6G6R6GA 6570.50MHz to 6589.75MHz Output Power 13 0℃ 25℃ 55℃ Output Power（dBm） 12 11 10 9 6570 6575 6580 6585 6590 Output Frequency（MHz） S6R6G6R6GA Rev.1.0 Jul.13, 2011 http://www.ndk.com/ Page 6/8

Contextual Info: 65803A 65803AL 8,388,608 WORDS x 8 BIT ¿ f c LG Sem ïcon Co., Ltd. w w .,f c .iw . CMOS DYNAMIC RAM Description Pin Configuration The GM71V(S 65803A/AL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)65803A/AL utilizes advanced CMOS

HY51V65803HG

Contextual Info: HY51V S 65803HG/HGL 8M x 8Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 8,388,608 x 8 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal

Contextual Info: »«YUWPA! > — - • 658010 2 Banks x 4 M x 8 8 it Synchronous DRAM DESCRIPTION The Hyundai H Y57V 658010 is a 67,108, 864-bit C M O S Synchronous DRAM, ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. H Y 57V 658010 is organized as 2banks of

ST-801

Abstract: 6580 ST801
Contextual Info: Model 6405, 6413 and 6580 Insulation Piercing Clips 24” 60cm Model 6580-24 12” (30cm) Model 6580-12 4” (10,16cm) FEATURES: Model 6405 Make contact with insulated wires without cutting or stripping insulation or 6413 Spring loaded double V clamp holds wire centered for piercing needle

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 65804 Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 18 (16/30) AWG BC 0.047 b) Insulation 0.022" Wall, Nom. PVC

S6R6G6R6GA

Contextual Info: Microwave Synthesizer Model : S6R6G6R6GA 6570.50MHz to 6589.75MHz Phase Noise （T=+25℃） 10Hz 100Hz 1kHz 10kHz 100kHz 1MHz 10MHz Output Frequency： 6570.500MHz 10Hz 100Hz 1kHz 10kHz 100kHz 1MHz 10MHz Output Frequency ： 6580.125MHz S6R6G6R6GA Rev.1.0

hym7v65801a

Abstract: hy57v658020a HYM7V65801ATFG1
Contextual Info: PC100 SDRAM Unbuffered DIMM 8Mx64bit F1-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8Krefresh 65800A/65801A/ HYM7V65830A/ HYM7V65831A Preliminary DESCRIPTION The 65800A/ 65801A/ 65830A/ 65831A F1-Series are high speed 3.3-Volt synchronous dynamic

TIBPAL22VP10-20C

Contextual Info: TIBPAL22VP10-20C, TIBPAL22VP10-25M HIGH-PERFORMANCE IMPACT-X  PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPS013 – D2943, FEBRUARY 1987 – REVISED JUNE 1991 • • • • • • • • CLK/I I I I I I I I I I I GND Choice of Operating Speeds: TIBPAL22VP10-20C . . . 20 ns Max

Contextual Info: SN54HC138, SN74HC138 3-LINE TO 8-LINE DECODERS/DEMULTIPLEXERS SCLS107E − DECEMBER 1982 − REVISED SEPTEMBER 2003 D Targeted Specifically for High-Speed D D D D D D D Memory Decoders and Data-Transmission Systems Wide Operating Voltage Range of 2 V to 6 V

HS165

Contextual Info: TMS45165, TMS45165L, TMS45165S 262 144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SM HS165 — JULY 1991 Single 5-V Supply 10% Tolerance Performance Ranges: A C C E S S A C C E S S A C C E S S R E A D OR TIM E TIM E T IM E W R ITE C Y C LE

junior power timer connector

Abstract: 785084-1 junior power timer AMP superseal 1.0 AMP junior timer 465644-1 1-1579007-1 Tyco MCON 1.2 3425 AMP Superseal 1.5 2 pin
Contextual Info: Insertion / Extraction Tool Types Revised: July 2012 Standard Extraction Tool Insert discrete terminals into connector housings or remove them, without causing damage to either the terminals or housings. Image representative of type only Features: This standard tool design features a comfortable handle and snapin/out protective cover. Users can stow the business end of the

f105k

Abstract: f65k diode LTC3891 F65K LTC3891EFE LTC3891IFE#PBF c3891 LTC3891FE LTC3824
Contextual Info: LTC3891 Low IQ, 60V Synchronous Step-Down Controller FEATURES DESCRIPTION n The LTC 3891 is a high performance step-down switching regulator DC/DC controller that drives an all N-channel synchronous power MOSFET stage. A constant frequency current mode architecture allows a phase-lockable