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    NT5TU64M16

    Abstract: NT5TU128M8BJ-3C NT5TU64M16BM nt5tu64m NT5TU128M8 128 MB DDR2 SDRAM 1GB DDR2 4 banks NT5TU256M4BJ
    Text: NT5TU256M4BJ / NT5TU128M8BJ / NT5TU64M16BM Green 1Gb DDR2 SDRAM Features CAS Latency and Frequency Speed Sorts -5A DDR2 -400 -37B DDR2 -533 -3C DDR2 -667 -25D DDR2 -800 Units Bin (CL-tRCD-TRP) 3-3-3 4-4-4 5-5-5 6-6-6 tck max. Clock Frequency 200 266 333 400


    Original     		PDF NT5TU256M4BJ NT5TU128M8BJ NT5TU64M16BM NT5TU64M16 NT5TU128M8BJ-3C nt5tu64m NT5TU128M8 128 MB DDR2 SDRAM 1GB DDR2 4 banks

    EDE1104AASE

    Abstract: EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE
    Text: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104AASE 256M words x 4 bits EDE1108AASE (128M words × 8 bits) Description Features The EDE1104AA is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AA is a 1G bits DDR2 SDRAM organized


    Original     		PDF EDE1104AASE EDE1108AASE EDE1104AA EDE1108AA 68-ball M01E0107 E0404E10 EDE1104AASE EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-667 DDR2-800 DDR2-1066 875ns

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 5 37 3 25 18 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 875ns

    Intel Stacked CSP

    Abstract: transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160
    Text: 3 Volt Intel Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology


    Original     		PDF 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Intel Stacked CSP transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160

    K4T1G084QA-ZCE6

    Abstract: K4T1G164QA-ZCE6 K4T1G084QA-ZCCC DDR2 Mechanical Dimensions K4T1G044QA-ZCCC K4T1G044QA-ZCD5 K4T1G044QA-ZCE6 K4T1G084QA-ZCE K4T1G164QA-ZCD5 sdram ddr2
    Text: 1G A-die DDR2 SDRAM DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Version 1.1 August 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF

    sandisk micro sd

    Abstract: digital clock using at89s52 microcontroller stepper motor control with avr application notes sandisk micro sd card pin configuration vhdl code for rs232 receiver STK 435 power amplifier Microcontroller AT89S52 vhdl code for ofdm Microcontroller AT89S52 40 pin fingerprint scanner circuit
    Text: Atmel Corporation Atmel Operations Corporate Headquarters 2325 Orchard Parkway San Jose, CA 95131 TEL 1 408 441-0311 FAX 1 (408) 487-2600 Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1 (408) 441-0311 FAX 1 (408) 436-4314 Regional Headquarters Microcontrollers


    Original     		PDF CH-1705 3271B sandisk micro sd digital clock using at89s52 microcontroller stepper motor control with avr application notes sandisk micro sd card pin configuration vhdl code for rs232 receiver STK 435 power amplifier Microcontroller AT89S52 vhdl code for ofdm Microcontroller AT89S52 40 pin fingerprint scanner circuit

    K4T2G084QA

    Abstract: K4T2G084QA-HCD5
    Text: K4T2G044QA K4T2G084QA 2Gb DDR2 SDRAM 2Gb A-die DDR2 SDRAM Specification 68FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4T2G044QA K4T2G084QA 68FBGA 6-10per) K4T2G084QA K4T2G084QA-HCD5

    K4T2G064QA

    Abstract: No abstract text available
    Text: 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb A-die 72-bit ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF 240pin 72-bit K4T2G064QA

    Untitled

    Abstract: No abstract text available
    Text: 2GB, 4GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb M-die 72-bit ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF 240pin 72-bit DDR2-400

    Untitled

    Abstract: No abstract text available
    Text: K4T1G044QA K4T1G084QA K4T1G164QA 1Gb DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Revision 1.3 October 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4T1G044QA K4T1G084QA K4T1G164QA

    Untitled

    Abstract: No abstract text available
    Text: 1Gb M-die DDR2 SDRAM DDR2 SDRAM 1Gb M-die DDR2 SDRAM Specification Version 1.1 January 2005 Page 1 of 29 Rev.1.1 Jan. 2005 1Gb M-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing 2.1 Package Pintout & Mechnical Dimension


    Original     		PDF DDR2-533 DDR2-400 256Mx4 K4T1G044QM-ZCD5 K4T1G044QM-ZCCC 128Mx8 K4T1G084QM-ZCD5 K4T1G084QM-ZCCC DDR2-400

    Untitled

    Abstract: No abstract text available
    Text: 240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb 1st ver. This Hynix unbuffered Dual In-Line Memory Module DIMM series consists of 1Gb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb 1st ver. based DDR2 Unbuffered DIMM


    Original     		PDF 240pin HYMP125U 1240pin

    nanya 8gb DDR3

    Abstract: nanya 4gb DDR3 SODIMM DDR3 DIMM 16H16 DDR3 rDIMM SODIMM ddr2 8gb TSOPII inphi PC3-12800 SSTL-15
    Text: NANYA Module Part Numbering Guide NT 4GT T 64 U 8 H NANYA Technology Module Density Product Family T=DDR2 SDRAM Data Width 64=x64 U N AC Speed 256=256MB 512=512MB 1G=1GB 2G=2GB 4G=4GB 8G=8GB 16T=16GB Stacking 32T=32GB (Stacking) D=DDR SDRAM C=DDR3 SDRAM


    Original     		PDF 256MB 512MB SSTL-18 SSTL-15 SSTL-13 PC2-3200-3-3-3 PC2-4200-4-4-4 PC2-5300-5-5-5 PC2-6400-5-5-5 PC2-6400-6-6-6 nanya 8gb DDR3 nanya 4gb DDR3 SODIMM DDR3 DIMM 16H16 DDR3 rDIMM SODIMM ddr2 8gb TSOPII inphi PC3-12800 SSTL-15

    Untitled

    Abstract: No abstract text available
    Text: HY5PS1G431 L F HY5PS1G831(L)F 1Gb DDR2 SDRAM HY5PS1G431(L)F HY5PS1G831(L)F This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS1G431 HY5PS1G831 1HY5PS1G431 1HY5PS1G831 68Ball

    Untitled

    Abstract: No abstract text available
    Text: HY5PS1G431 L F HY5PS1G831(L)F 1Gb DDR2 SDRAM HY5PS1G431(L)F HY5PS1G831(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS1G431 HY5PS1G831 HY5PS12421 HY5PS12821 HY5PS121621

    K4T2G084QA

    Abstract: DDR2-667 DDR2-800 K4T2G044QA
    Text: K4T2G044QA K4T2G084QA 2Gb DDR2 SDRAM 2Gb A-die DDR2 SDRAM Specification 68FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4T2G044QA K4T2G084QA 68FBGA 6-10per) K4T2G084QA DDR2-667 DDR2-800 K4T2G044QA

    K4T1G164QF

    Abstract: 1GB DDR2 4 banks K4T51083QI-HCE7 K4T51163QI K4T1G164QQ-HC k4t51083qi m470t5663 K4T1G164QE samsung ddr2 240pin 1gb K4T1G164QE-HC
    Text: Apr. 2010 DDR2 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


    Original     		PDF 68Ball 10MAX K4T1G164QF 1GB DDR2 4 banks K4T51083QI-HCE7 K4T51163QI K4T1G164QQ-HC k4t51083qi m470t5663 K4T1G164QE samsung ddr2 240pin 1gb K4T1G164QE-HC

    K4T2G084QA

    Abstract: K4T2G084QA-HCD5 k4t2g084 k4t2g084qa-hcf7 K4T2G084QA-HCE7 K4T2G084Q K4T2G084QA-HCE6 K4T2G044QA-HCE6 K4T2G044QA DDR2-667
    Text: K4T2G044QA K4T2G084QA 2Gb DDR2 SDRAM 2Gb A-die DDR2 SDRAM Specification 68FBGA with Pb-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4T2G044QA K4T2G084QA 68FBGA 6-10per) K4T2G084QA K4T2G084QA-HCD5 k4t2g084 k4t2g084qa-hcf7 K4T2G084QA-HCE7 K4T2G084Q K4T2G084QA-HCE6 K4T2G044QA-HCE6 K4T2G044QA DDR2-667

    DDR2-400

    Abstract: DDR2-533 JESD51-2 K4T1G044QM-ZCCC K4T1G044QM-ZCD5 1G DDR2 128 x 8
    Text: DDR2 SDRAM 1G M-die DDR2 SDRAM 1Gb M-die DDR2 SDRAM Specification Version 1.4 July 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF DDR2-400 DDR2-533 DDR2-400 JESD51-2 K4T1G044QM-ZCCC K4T1G044QM-ZCD5 1G DDR2 128 x 8

    HYMP351R72MP4-E3

    Abstract: No abstract text available
    Text: 240pin Registered DDR2 SDRAM DIMMs based on 1Gb 1st ver. This Hynix unbuffered Dual In-Line Memory Module DIMM series consists of 1Gb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1 Gb 1st ver. based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25"


    Original     		PDF 240pin 1240pin HYMP351R72MP4-E3

    NT5TU64M16BM

    Abstract: NT5TU128M8BJ
    Text: NT5TU256M4BJ / NT5TU128M8BJ / NT5TU64M16BM Green 1Gb DDR2 SDRAM - Preliminary Features CAS Latency and Frequency Speed Sorts -5A DDR2 -400 -37B DDR2 -533 -3C DDR2 -667 -25D DDR2 -800 Units Bin (CL-tRCD-TRP) 3-3-3 4-4-4 5-5-5 6-6-6 tck max. Clock Frequency


    Original     		PDF NT5TU256M4BJ NT5TU128M8BJ NT5TU64M16BM

    K4T2G264QA

    Abstract: RESISTOR 820 OHM
    Text: RDIMM DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb A-die 72-bit ECC 68FBGA & 56FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF 240pin 72-bit 68FBGA 56FBGA K4T2G264QA RESISTOR 820 OHM

    Untitled

    Abstract: No abstract text available
    Text: NT5TU256M4BJ / NT5TU128M8BJ / NT5TU64M16BM Green 1Gb DDR2 SDRAM Features CAS Latency and Frequency Speed Sorts -5A DDR2 -400 -37B DDR2 -533 -3C DDR2 -667 -25D DDR2 -800 Units Bin (CL-tRCD-TRP) 3-3-3 4-4-4 5-5-5 6-6-6 tck max. Clock Frequency 200 266 333 400


    Original     		PDF NT5TU256M4BJ NT5TU128M8BJ NT5TU64M16BM