Untitled
Abstract: No abstract text available
Text: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc
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70S7fl
000bfl7fl
ZTX657
MPSA42
ZTX656
MPSA43
ZTX655
ZTX455
ZTX454
ZTX654
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ds132
Abstract: No abstract text available
Text: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BST86 FEATURES: PARTMARKING DETAIL - KO ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 180 UNIT V Continuous Drain Current at Ta = 25°C •d 300 mA mA Pulse Drain Current taM
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BST86
100/iA
lD300m
300fis.
70S7fl
ds132
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PDF
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Untitled
Abstract: No abstract text available
Text: bOE D • CH ? Ü 5 7 B 0007210 00e! « Z E T B ZETEX SEMICONDUCTORS IMPIM Silicon Planar High Voltage Transistors M PSA42 M PSA43 D E S C R IP T IO N T h ese plastic encapsulated, general purp ose transistors are d esigned for applications requiring high breakdow n voltages, low
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PSA42
PSA43
200ns.
0G07212
MpsA42
DDD7213
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - M A Y 94_ FEATURES * 12 Volt V CE0 * Gain of 400 at lc=3 A m p s * Very low saturation voltage A P P L IC A T IO N S * Darlington replacement * Flash gu n convertors
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cH7Q57Ã
0Q1Q354
001G35S
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PDF
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ZVNL120Z
Abstract: DMOSFET
Text: S0T89 N-CHANNEL ENHANCEMENT MODE VERTICAL D.MOSFET ZVIML120Z PARTMARKING DETAIL: ZVNL120Z - L12 * FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVNL120G DATA SHEET ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Drain-Source Voltage Continuous Drain Current at Ta = 25°C
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S0T89
ZVNL120Z
ZVIML120Z
ZVNL120G
125mA,
250mA
70S7fl
DMOSFET
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ISSU E 1 - JU L Y FEATU RES * 300 Volt V.CEO 0.5 Amp continuous current P,o,= 1 Watt E E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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ZTX557
ZTX556
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 60 Volt V DS * R DS on = 2 £ i ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Drain-Source Voltage Continuous Drain Current at Tamtp25°C VALUE UNIT V DS 60
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Tamtp25Â
001G35S
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PDF
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ZVN2110
Abstract: Zetex dmos ZVIM2110 ZVN2110B ZVN211 F-127 ZVN2110A ZVN2110C ZVN2110E F131
Text: J> bOE ^70570 • ZETEX 0007027 6 TÔ I Z E T B —I SEMICONDUCTORS N-channel enhancement mode vertical D M O S FET ZVN 2110 F EA T U R E S • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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ZVN2110
ZVN2110A*
ZVN2110B*
ZVN2110C
Z-130
F-131
70S7fl
4/derating/8/86
ZVN2110
Zetex dmos
ZVIM2110
ZVN2110B
ZVN211
F-127
ZVN2110A
ZVN2110E
F131
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 O_ FEATURES * Suitable fo r AF drivers and ou tput stages * High collector current and Low VCE sat COMPLEMENTARY TYPE - BCP53 PARTMARKING DETAILS - BCP56 BCP56 - 1 0 B C P 5 6-1 6
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OT223
BCP53
BCP56
BCP56
500mA,
BCP56-10
BCP56-16
150mA,
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analogue ohmmeter circuit diagram
Abstract: transistor tt 2170 em digital ic cd 4066 BUT18
Text: ZE TE X INC TS » • TÌ70570 DDDbCm 4 ■ 95D 06 0 9 9 T 'S t - t O - e S " ZN451E ZN451CJ 3 y2 digit DVM 1C with external auto-zero DESCRIPTION EATURES External circuits may be included in the auto-zero loop ’ Full-scale reading 1 .9 9 9 m V or lower
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ZN451E
ZN451CJ
Ti7057fl
analogue ohmmeter circuit diagram
transistor tt 2170 em
digital ic cd 4066
BUT18
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PDF
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424A ISSUE 2 January 1994_ FEATURES * 240 Volt VDS * R D S o n = 4 ' 3 i i t y P ' 031 a t V G S = 2 -5 V * Low threshold APPLICATIONS * Earth recall and dialling switches * Electronic hook switches
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ZVN4424A
arntf25Â
300ns.
DD10312
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