bgjg
Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Text: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control
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-0ciBLF542
0D43TS4
OT171
PINNING-SOT171
MBA931
MRA971
bgjg
transistor T
philips 2322 733
BLF542
UFU370
3a0c
2222 030 capacitor philips
philips potentiometer
43t transistor
3909
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8uk453
Abstract: BUK453-60A BUK453-60B T0220AB
Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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7110fi2b
BUK453-60A/B
T0220AB
BUK453
8uk453
BUK453-60A
BUK453-60B
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BUK543
Abstract: BUK543-60A BUK543-60B TTA10
Text: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack
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BUK543-60A/B
-SOT186
BUK543
DS10NÃ
BUK543-60A
BUK543-60B
TTA10
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MCL T1-1
Abstract: MAB8048 PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
Text: D EV ELO P M EN T DATA 34E m This data sheet contains advance information and specifications are subject to change without notice. _ 711Dfl2b 0011455 S I | PCF84C121 PHILIPS INT ER NATIONAL _ SINGLE-CHIP 8-BIT M ICROCONTROLLER WITH 8 B Y T E S EEPROM
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711002b
G0114SS
PCF84C121
PCF84C121.
PCF84C121
PCF84C12.
7110fl2b
MCL T1-1
MAB8048
PCF84C12
PCF84C121P
PCF84C121T
S020
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m3303
Abstract: 10a ultra fast diode M3306 BYR34 BYR34-500 M3299
Text: SbE D • 711DflSb DDmSSfl IPHIN T'lfl DEVELOPMENT DATA T h is d a ta she e t c o n ta in s BYR34 SERIES advance in fo r m a t io n and s p e c ific a tio n s are s u b je c t to ch a n g e w it h o u t n o tic e . PHILIPS INTER N A T I O N A L ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES
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711DflSb
BYR34
T-03-/7
711002b
T-03-17
m3303
10a ultra fast diode
M3306
BYR34-500
M3299
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IL 741
Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101
Text: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In
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711Dfl5t,
BUK441-100A/B
BUK441
-100A
-100B
-SOT186
IL 741
philips lps 100
BUK441-100A
BUK441-100B
P101
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P3Q22V10-7A
Abstract: P3Q22V10-7D P3Q22V10-7N Pal programming 22v10
Text: PHILIPS INT ERNATIONAL bSE J> m 711DflEb O D b i n S 3SR • P H I N Philip» Sem iconductors Low Voltage specification 3 Volt BiCMOS Versatile PAL P3Q22V10-7 DESCRIPTION FEATURES
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711DflEb
P3Q22V10â
P3Q22V10-7
100mA
24-Pin
P3Q22V10-7N
0410D
P3Q22V10-7A
0401F
P3Q22V10-7D
Pal programming 22v10
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J108
Abstract: J109 J110 PZFJ108 PZFJ109 PZFJ110
Text: • 711Dfl2b OObflOMa 414 IPHIN Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections • Low R d s o ii at zero gate voltage (< 8 £i for PZFJ 108)
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711Dfl2b
PZFJ108/PZFJ109/PZFJ110
PZFJ108)
-SOT223
OT223
MBB114
PZFJ109)
PZFJ110)
711082b
J108
J109
J110
PZFJ108
PZFJ109
PZFJ110
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RZB12250Y
Abstract: No abstract text available
Text: / " 3 3 - ! j £ RZB12250Y M AIN TEN AN C E TYPE PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMbblb 7 n ■PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications.
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RZB12250Y
FO-57C.
RZB12250Y
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BTW42-600R
Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
Text: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase
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DDbS43i
BTW42
BTW42â
1000R.
1000r
BTW38
BTW42-600R
TSM 1250
1000R
mml 600
600R
BTW42-600RC
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1df diode
Abstract: 74ABT 74ABT240-1D 74ABT240-1DB 74ABT240-1N
Text: PHILIPS INTERNATIONAL bSE D • 711Dfl2b 0057442 534 ■ PHIN Philips Sem iconductors Advanced BiCMOS Products P roduct specification Octal inverting buffer with 30£2 series termination resistors 3-State 74ABT240-1 QUICK REFERENCE DATA FEATURES • Octal bus interface
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711Dfl2b
74ABT240-1
12mA/-32mA
500mA
74ABT240-1
74ABT
500ns
1df diode
74ABT240-1D
74ABT240-1DB
74ABT240-1N
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International Power Sources
Abstract: LWE2025R
Text: T -3 3 -0 5 LWE2025R / \ PHILIPS INTERNATIONAL 5bE D • 711Dfl5b DDMbSTfc. 35fl BiPHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon p ow er tra n sisto r fo r use in a co m m o n -e m itte r,cla ss-A a m p lifie r up to 2.3 G H z in CW c o n d itio n s in m ilita ry and professional applications.
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33-OS
LWE2025R
7110fl5b
FO-93)
MCD656
T-33-05
International Power Sources
LWE2025R
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74ABT2952
Abstract: 74ABT2952D 74ABT2952DB 74ABT2952N 74ABT2952PW
Text: INTEGRATED CIRCUITS 74ABT2952 Octal registered transceiver 3-State Product specification 1995 Feb 16 IC23 Data Handbook Philips Semiconductors PHILIPS • 711DflSb □□flbcIS7 b û 7 ■ This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors
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74ABT2952
711DflSb
64mA/-32mA
500mA
74ABT
TSSOP24:
OT355-1
MSA401
74ABT2952
74ABT2952D
74ABT2952DB
74ABT2952N
74ABT2952PW
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SCN26562
Abstract: SCN26562C4A52 SCN26562C4N48
Text: INTEGRATED CIRCUITS SCN26562 Dual universal serial communications controller DUSCC Product specification 1995 May 1 IC19 Philips Semiconductors PHILIPS PHILIPS 711DflSb ôbT Philips Semiconductors Product specification Dual universal serial communications controller (DUSCC)
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SCN26562
711Gfl2b
SCN26562
sot238-3
mo-047ad
711005b
SCN26562C4A52
SCN26562C4N48
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T0220AB
Abstract: ScansUX66
Text: PHILIPS INTERNATIONAL 41E ]> P 711Dfl2ti G'QEmfl? £ ggPHIN r - 2 3 '0 7 _ Philips Com ponents BWS2E-100/150/200 Data sheet status Preliminary specification date o f issue January 1991 GENERAL DESCRIPTION Glass passivated, high efficiency, rugged dual epitaxial rectifier
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-f-23-07_
0024nS
BYV32E-100/150/200
T0220AB;
T0220
T0220AB
ScansUX66
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BUK102-50GL
Abstract: IEC134 T0220AB AAB3 buk102-500l
Text: PHILIPS I N T E R N A T I O NA L tSE D • 711Dfl2b D0b3fl25 blfi « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK102-50GL Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and
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PDF
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7110A2b
D0b3fl25
BUK102-50GL
ll3/lls25t
IEC134
T0220AB
AAB3
buk102-500l
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Untitled
Abstract: No abstract text available
Text: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMb4flfl 043 ■ P H I N 7 MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.
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PZ2327B15U
711Dfl2b
T-33-09
7110flEb
711065b
Q04b4c
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BYX96
Abstract: T17C as6 diode BYX96-300 BYX96-300R BYX96-300U D60-r
Text: BYX96 SERIES PHILIPS INTERNATIONAL SbE D • 711DflSt. D041bS5 1T3 ■ PHIN r-o ■ n RECTIFIER DIODES Also available to B S 9 331-F 129 Silicon rectifier diodes in metal envelopes similar to DO -4, intended fo r use in power rectifier applications. The series consists o f the following types:
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BYX96
G041bS5
BS9331-F129
BYX96-300
BYX96-300R
1600R.
7Z72262
BYX96
T17C
as6 diode
BYX96-300U
D60-r
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MCD656
Abstract: LWE2025R
Text: T -3 S -0 5 LWE2025R / V PHILIPS INTERNATIONAL SbE D • 711DflEb DDMbSTb 3Sfl ■ P H I N MICROWAVE LINEAR POWER TRANSISTOR NPN silicon power transistor fo r use in a com m on-emitter, class-A am plifier up to 2.3 GHz in CW conditions in m ilitary and professional applications.
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-T-33-OS
LWE2025R
7110fl2b
FO-93)
MCD656
T-33-05
MCD656
LWE2025R
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TRANSISTOR SMD MARKING CODE 5b
Abstract: transistor smd CF RQ TRANSISTOR SMD MARKING CODE KF smd transistor marking L6 NPN SMD Transistor 7z transistor marking smd 7z 5B smd transistor data transistor SMD MARKING CODE HF smd marking code SSs SMD MARKING GP TRANSISTOR
Text: Philips Semiconductors 711Dfl2h DDbTBT? 743 M P H IN Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • QUICK REFERENCE DATA RF performance at Ts < 60 °C In a common emitter class-B test circuit see note 1 . Emitter-ballasting resistors for
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7110fl2tj
BLU86
OT223
OT223
TRANSISTOR SMD MARKING CODE 5b
transistor smd CF RQ
TRANSISTOR SMD MARKING CODE KF
smd transistor marking L6 NPN
SMD Transistor 7z
transistor marking smd 7z
5B smd transistor data
transistor SMD MARKING CODE HF
smd marking code SSs
SMD MARKING GP TRANSISTOR
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sot173x
Abstract: BFP505
Text: Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES ¡"^7 ”^“ 3 SbE D • BFP505 711DflSb QDMS3flS AS? ■ P H I N PINNING • High power gain • Low noise figure DESCRIPTION PIN • High transition frequency
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OT173X)
BFP505
711DflSb
BFP505
OT173
OT173X
MBC360
sot173x
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M3163
Abstract: M3162
Text: BYV121 SERIES - = PHILIPS INTERNATIONAL SbE ]> • 711Dfl2t D O m m b bb3 ■ P H I N SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop,
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BYV121
711Dfl2t
T-03-17
711002b
0D41S03
D8493
M3163
M3162
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BYX25
Abstract: BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400
Text: BYX25 SERIES ~ SbE D PHILIPS INTERNATIONAL • 711Dfl2b □ DMlS'lb 544 « P H I N T-0 7 - H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types:
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BYX25
711Dfl2b
BYX25--600
BYX25--1400.
BYX25--600R
BYX25--1400R.
10-32UNF
711DflSti
BYX25-600
diode BYX25 600
BYX25-600R
BYX25-1400
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80C51
Abstract: 83CE654 RFI noise reduction
Text: 711DflSb DDbbflE? IbS • P H I N Philips Semiconductors Microcontroller Products Preliminary specification CMOS single-chip 8-bit m icrocontroli^ ^T h"” Electromagnetic Compatibility improvements DESCRIPTION PIN CONFIGURATION The 83CE654 Single-Chip 8-Bit
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711Qflab
80CE654/83CE654
83CE654
80C51
80C51.
83CE654
80CE654
8XCE654
RFI noise reduction
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