Contextual Info: CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle times) — Military: 2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 n s (m ax.) — Com mercial: 15/2 0 /2 5 /3 5 n s (m ax.)

Contextual Info: CM O S STATIC RAM 64K 1 6 K x 4-BIT I ? 8? IDT7188L FEATURES: DESCRIPTION: • The ID T7188 Is a 6 5 ,5 3 6 -b lt h ig h -s p e e d sta tic RAM orga n ized as 16K x 4. It is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlghre lla b lllty te c h n o lo g y —C EM O S . T h is state-of-the-art tech n olo gy,

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

7164L85L32B

Abstract: 71256L35L32B 7164L70L32B 5962-8866206 5962-8855201XA 7164S35DB 5962-8670501UA 8413202YA SRAM 71256S70DB
Contextual Info: SRAM Military Offerings ?Military Selector Guide by IDT Part Number … Page 2-7 ?Military Selector Guide (by SMD Number) .… … Page 8-11 ?Obsolete Part List and Replacement Guide … … .Page 12-13 Last Updated on: 8/27/2001 1 of 13 SRAM Military Selector Guide (by IDT Part Number)

IDT7188

Abstract: IDT7188L IDT7188S 7188s20 2989
Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version

S0244

Contextual Info: INTEGRATE] DEVICE 5ÖE ]> • 4Û ES7 71 DDllS'IS 0b3 M I D T CMOS STATIC RAM 64 K 1 6K x 4-BIT) IDT7188S IDT7188L FEATURES: of-th e -a rt tech nology, com bin ed w ith innovative circuit design • H ig h -sp ee d (e q u a l acc e s s and cycle tim es)

s484

Abstract: t dc s479
Contextual Info: I I N T E G R A T E D D E VI CE 14E D 4 Ö 2 S 77 1 0 0 Q 3 3 4 3 7 CMOS STATIC RAM 64K 16K x 4-BIT IDT 7188S IDT 7188L T - H b ' 1 3 ' l O FEATURES: • • High-speed (equal access and cycle times) - Military: 2 0 /2 5/30 /3 5 /4 5 /5 5 /7 0/85 n s (max.)

DTM03

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: of-the-art technology, combined with innovative c irc u it design techniques, provides a cost effective approach for memory • High-speed (equal access and cycle times)

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

5962-8969001

Abstract: 71256L35L32B 5962-8855201XA 5962-8866201XA 7164S25L32B 5962-8552512XA 71256L70DB 600MIL IDT CERDIP 20 PACKAGE 5962-8670513RA
Contextual Info: SRAM MILITARY SELECTOR GUIDE SRAM Military Offerings Page SRAM Military Selector Guide . 3-6 SRAM Military Selector Guide by SMD Number . 7-9 Obsolete Part List and Replacement Guide . 10

IDT7188

Abstract: IDT7188L IDT7188S
Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 20ns are available. The IDT7188

Contextual Info: BflE D INTEGRATE» DEVICE • MÔ5S771 DÜGÖ31Ö □ ■ IDT -W 6-2-3-I0 CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L FEATURES: DESCRIPTION: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.)

7188s20

Abstract: 7188L 55AC10
Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice T ech n o lo gy, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 20ns are available. T h e ID T 7 188

Contextual Info: CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L Integrated Device T echnology, Inc. FEATURES: of-the-art technology, com bined w ith inno vative circuit design techniques, provides a cost effective ap proach for m em ory intensive applications. A ccess tim e s as fa st as 15ns are available. T h e ID T7188

Contextual Info: CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L I n t e g r a t e d D e v ic e T e c h n o lo g y , I n c . FEATURES: DESCRIPTION: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.)

IDT54FCT541ATDB

Abstract: 5962-8861011UA 54FCT543DB 5962-8986301 54FCT162245TEB 54FCT543AT 54FCT541CTDB 5962-8860802 IDT54FCT162245ATEB 5962-8855201XA
Contextual Info: FIFO MILITARY SELECTOR GUIDE As Of: November 1, 2001 FIFO Military Offerings Page FIFO Military Selector Guide by Part Number . 3-4 FIFO Military Selector Guide (by SMD Number) . 5 Obsolete Part List and Replacement Guide . 6-8

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice Technology, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access tim es as fast as 20ns are available. The IDT7188

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: of-th e -a rt tech nology, c om bin ed with in novative circuit design • H ig h -sp ee d (equal a cc e s s and cycle tim es) tech niq ues, provides a cost effective app ro a c h for m em ory