Contextual Info: CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle times) — Military: 2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 n s (m ax.) — Com mercial: 15/2 0 /2 5 /3 5 n s (m ax.)

Contextual Info: CM O S STATIC RAM 64K 1 6 K x 4-BIT I ? 8? IDT7188L FEATURES: DESCRIPTION: • The ID T7188 Is a 6 5 ,5 3 6 -b lt h ig h -s p e e d sta tic RAM orga n ized as 16K x 4. It is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlghre lla b lllty te c h n o lo g y —C EM O S . T h is state-of-the-art tech n olo gy,

7188L35

Abstract: IDT7188 IDT7188L IDT7188S 2989
Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version

2989

Abstract: 7188L70 7188S25
Contextual Info: IDT7188S IDT7188L CMOS Static RAM 64K 16K x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a

Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16Kx 4-BIT Integrated Device Technology, Inc. FEATURES: • H igh-speed (equal access and cycle times) — Military: 25 /3 5 /4 5 /5 5 /7 0 /8 5 n s (m ax.) • Low power consumption • Battery backup operation — 2V data retention (L version

IDT7188

Abstract: IDT7188L IDT7188S 7188s20 2989
Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version

S0244

Contextual Info: INTEGRATE] DEVICE 5ÖE ]> • 4Û ES7 71 DDllS'IS 0b3 M I D T CMOS STATIC RAM 64 K 1 6K x 4-BIT) IDT7188S IDT7188L FEATURES: of-th e -a rt tech nology, com bin ed w ith innovative circuit design • H ig h -sp ee d (e q u a l acc e s s and cycle tim es)

DTM03

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: of-the-art technology, combined with innovative c irc u it design techniques, provides a cost effective approach for memory • High-speed (equal access and cycle times)

IDT7188

Abstract: IDT7188L IDT7188S
Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 20ns are available. The IDT7188

Contextual Info: BflE D INTEGRATE» DEVICE • MÔ5S771 DÜGÖ31Ö □ ■ IDT -W 6-2-3-I0 CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L FEATURES: DESCRIPTION: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.)

7188s20

Abstract: 7188L 55AC10
Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice T ech n o lo gy, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 20ns are available. T h e ID T 7 188

IDT7188

Abstract: IDT7188L IDT7188S 7188 dip 2989
Contextual Info: IDT7188S IDT7188L CMOS Static RAM 64K 16K x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a

Contextual Info: CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L Integrated Device T echnology, Inc. FEATURES: of-the-art technology, com bined w ith inno vative circuit design techniques, provides a cost effective ap proach for m em ory intensive applications. A ccess tim e s as fa st as 15ns are available. T h e ID T7188

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice Technology, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access tim es as fast as 20ns are available. The IDT7188

2989

Abstract: IDT7188S 7188L70 IDT7188 IDT7188L 7188S25
Contextual Info: CMOS Static RAM 64K 16K x 4-Bit IDT7188S IDT7188L Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a

Contextual Info: i: jW 'N I d tj CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers areduced power standby mode, Isbi , which is activated

Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: of-th e -a rt tech nology, c om bin ed with in novative circuit design • H ig h -sp ee d (equal a cc e s s and cycle tim es) tech niq ues, provides a cost effective app ro a c h for m em ory

Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version

s484

Abstract: t dc s479
Contextual Info: I I N T E G R A T E D D E VI CE 14E D 4 Ö 2 S 77 1 0 0 Q 3 3 4 3 7 CMOS STATIC RAM 64K 16K x 4-BIT IDT 7188S IDT 7188L T - H b ' 1 3 ' l O FEATURES: • • High-speed (equal access and cycle times) - Military: 2 0 /2 5/30 /3 5 /4 5 /5 5 /7 0/85 n s (max.)

DT 7188

Abstract: HY62C88-70 HY62C88L-35 HY62C88L-45 HY62C88L-55 HY62C88L-70 IDT7188L45 IDT7188L70 IDT7188L85
Contextual Info: - 70 6 4 K m tfc £ iâ&ïcffl CC TAAC •ax ns) TCAC max (ns) TOE max (ns) CMOS 7 X 4 TOH sin (ns) y / TOD nax (ns) TWP min (ns) S t a t i c [1 A M ( I 6 3 8 4 X 4 ) f t it TDS rain (ris) « T'WR max (ns) V D D or V C C I DD max (ns) TWD rain (ns) (V) (• A)

diode cross reference

Abstract: IDT6168LA55LB CY7C186A-45DMB IDT CROSS REFERENCE LOGIC CY7C128A-25DMB IDT71256L45L32B IDT6168LA70LB cross reference CY7C024-55AC CY7C433-25JC
Contextual Info: IDT/Cypress Product Cross Reference FIFOs FIFOs FIFOs CYPRESS IDT CYPRESS IDT CYPRESS CY7C419-10PC IDT7203L50P CY7C428-20PC IDT7205L50J CY7C460A-25JC IDT7200L12J CY7C419-10JC IDT7203L12P CY7C429-10PC IDT7206L15P CY7C462A-15PC IDT7200L15TP CY7C419-10PC IDT7203L12TP

s482

Abstract: s484
Contextual Info: Pdt Integrated DeviceTechnology Inc C M O S STATIC RAM 64K 1 6 K x 4-BIT) IDT 7188S IDT 7188L FEATURES: DESCRIPTION: • The ID T7188 is a 65,536-blt high-speed static RAM organized as 16K x 4. It is fabricated using IDT's high-performance, highrellability te c h n o lo g y -C E M O S . This state-of-the-arl technology,

54FCT162245

Abstract: IDT7164L85L32B 5962-9576101MSA 54fct16244 IDT54FCT244ATEB IDT7164L70L32B 54FCT16245 5962-92213 5962-8762901RA IDT7201LA120DB
Contextual Info: IDT Military Product Selector Guide January 1999 Military Overview Introduction Since the company’s inception in 1980, IDT has been a dedicated supplier of products for the military market. IDT supplies communications memories, networking devices, embedded RISC microprocessors, high-speed static random access