Untitled
Abstract: No abstract text available
Text: SAMSUNG SEM ICOND UC TO R INC OS KS54HCTLS '"££Q C / ¿ Z O / i KS74HCTLS • DE | 71b4145 ODPbSSI b | ,J/ 6-Bit Shift Registers with Output Registers . FEATURES ^ 9 ^ DESCRIPTION • 8-Bit SerlaHn, ParalleK ut Shift Registers With Storage • Choice of 3-State ’59S) or Open-Drain (’596) Parallel
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71b4145
KS54HCTLS
KS74HCTLS
54/74LS
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: KM736V689/L 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION - Synchronous Operation. . 2 Stage Pipelined operation with 4 Burst. - On-Chip Address Counter. . Self-Timed Write Cycle. - On-Chip Address and Control Registers.
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KM736V689/L
64Kx36
64Kx36-Bit
100-TQFP-1420A
14ELECTRONICS
71b4145
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Untitled
Abstract: No abstract text available
Text: KMM366S824AT NEW JEDEC SDRAM MODULE KMM366S824AT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S824AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM366S824AT
KMM366S824AT
8Mx64
4Mx16,
400mil
168-pin
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ANA 6681
Abstract: dot matrix 8*8 TOM -1588 tic 246 bd s639b ZZZB KS0070 ci 4303
Text: KS0070 CMOS DIGITAL INTEGRATED CIRCUIT DOT MATRIX LCD CONTROLLER & DRIVER KS0070 is a do t m atrix LCD driver & c o n tro lle r LSI w hich is fabricated by low pow er CMOS technology. FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 80 segment signal
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KS0070
KS0070
KS0070-00;
KS0070-00
D02D741
60-QFP-1414A
64-QFP-U20D
ANA 6681
dot matrix 8*8 TOM -1588
tic 246 bd
s639b
ZZZB
ci 4303
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D240C
Abstract: No abstract text available
Text: KM29N16000T/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Celi Array : 2M +64K x 8 bit - Data Register : (256 + 8) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29N16000T/R
D240C
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RAS 1210 SUN HOLD
Abstract: sun hold RAS 1220 sun hold ras 1210
Text: CMOS DRAM KM416V1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION T h e S a m sun g K M 4 16V 1204A /A -L7A -F is a C M O S high • Performance range: tRA C tC A C tR C tH PC 24ns KM416V1204A-6/A-L6/A-F6 60ns 17ns
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KM416V1204A/A-L/A-F
KM416V1204A-6/A-L6/A-F6
110ns
KM416V1204A-7/A-L7/A-F7
130ns
KM416V1204A-8/A-L8/A-F8
150ns
42-LEAD
44-LEAD
RAS 1210 SUN HOLD
sun hold RAS 1220
sun hold ras 1210
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung
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DD147b3
KMM594100N
KMM594100N
KM44C4100J
20-pin
KM41C4000BJ
30-pin
KMM5364100N-6
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Untitled
Abstract: No abstract text available
Text: KM4 I C I 6000B S CMOS DRAM ELECTRONICS 16M x 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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6000B
16Mx1
KM41C16000BS
0G34Q05
71b4142
0034QGfc>
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC DB DE TUMIME KS54AHCT j f i f i KS74AHCT " " “ FEATURES Q0Dt.D35 5 J ~ _ 8-Bit Parallel-ln/Serial-Out Shift Registers with Cleat | ” “ * • Synchronous load • Direct .overriding clear • Parallel to serial Conversion • Function, pin-out, speed and drive compatibility with
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KS54AHCT
KS74AHCT
7Tb414S
14-Pin
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KS0076
Abstract: fec 91 k 1507
Text: KS0076 CMOS DIGITAL INTEGRATED CIRCUIT DOT MATRIX LCD CONTROLLER & DRIVER 80 Q FP The KS0076 is a d o t m atrix LCD drive r & c o n tro lle r LSI w hich is fab ricate d by low pow er CMOS technology. FUNCTION • Character type dot matrix LCD driver & controller
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KS0076
KS0076
KS0076-00
-1414A
71b4145
fec 91 k 1507
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PDF
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wram samsung
Abstract: 2W-25 OQ29
Text: KM4232W259A Graphic Memo ry ELECTRONICS FEATURES DESCRIPTION • 1 M Byte Frame-Buffer on a single chip • 2.1 G Byte/Second Internal Bus: - Fast Window Drawing Operations - Fill at up to 2.1 G Byte/Second -Aligned BitBLT at up to 0.64 G Byte/Second • 8-Column Block W rite with Bit and Byte Masking
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KM423
2W259A
-15ns
-83MHz
120-Pin
KM4232W259A
KM4232W259A
0Q312CH
wram samsung
2W-25
OQ29
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km29n16000at
Abstract: c60h - dc
Text: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29N16000AT/R
250us
ib4142
km29n16000at
c60h - dc
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MULTIMEDIA VIDEO K S 0116 GENLOCK DIGITIZER The KS01Î6 is a complete single chip genlock digitizer tor NTSC video input. Using SAMSUNG’S advanced CMOS technology thé KS0116 GENLOCK implements standard analog functions associated with the front end
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KS0116
KS0116
71b4145
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Untitled
Abstract: No abstract text available
Text: KM6161002A CMOS SRAM 64 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002A-12 : 220 mA(Max.) KM6161002A-15:210 mA(Max.)
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KM6161002A
KM6161002A-12
KM6161002A-15
KM6161002A-17:
KM6161002A-20
KM6161002AJ
44-SOJ-400
KM6161002AT
44-TSOP2-4Ã
KM6161002A
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KM428C128
Abstract: No abstract text available
Text: SAMSUNG ELECTR ONI CS INC bHE D • 7Tb4142 GD13ÖSb ES7 I SMGK PRELIMINARY KM428C128 CMOS VIDEO RAM 12 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance Speed — -Parameter
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7Tb4142
KM428C128
100ns
125ns
150ns
180ns
40-PIN
40/44-PIN
KM428C128
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PDF
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KM4216C
Abstract: No abstract text available
Text: KM4232W259 CMOS WINDOW RAM FEATURES DESCRIPTION • 1M Byte Frame-Buffer on a single chip • 1.6 G-Byte/Second Internal Bus: - Fast W indow Drawing Operations - F ill at up to 1.6 G Byte/Second -A lig n e d BitBLT at up to 0 .6 4 G-Byte/Second • 8-Column B lock W rite w ith B it and Byte Masking
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KM4232W259
KM4232W259
7Tb4142
KM4216C/V255/6/8
05MIN
0027fi2fl
KM4216C
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • KM48C512/L/SL 7^4142 0D133bS 4b2 « S M Ö K CMOS DRAM 5 1 2 K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512/L/SL is a CMOS high speed 524,288 b it x 8 Dynamic Random Access Memory. Its
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KM48C512/L/SL
0D133bS
KM48C512/L/SL
KM48C512/USL-7
130ns
KM48C512/L/SL-8
150ns
100ns
180ns
KM48C512/L/SL-10
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KS0066F00
Abstract: No abstract text available
Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0066 DOT MATRIX LCD CONTROLLER & DRIVER The KS0066 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology. FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 40 segment signal output.
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KS0066
KS0066
32kinds
KS0066FQ0,
71b414E
60-QFP-UUA
Q0220b7
98-STAB-35mm
120-STAB-35mm
KS0066F00
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KM29N32000T
Abstract: km29n32000
Text: FLASH MEMORY KM29N32000T/R 4 M x 8 Bit N A N D Flash M em ory GENERAL DESCRIPTION FEATURES • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bit x Sbit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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KM29N32000T/R
250us
KM29N32000T
km29n32000
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PDF
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DD-3754
Abstract: No abstract text available
Text: KM718V787 128Kx18 Synchronous SRAM 128Kx18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION •• Synchronous Operation. •• On-Chip Address Counter. Write Self-Timed Cycle. •• On-Chip Address and Control Registers. •• Single 3.3” 5% Power Supply.
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KM718V787
128Kx18-Bit
100-Pin
128Kx18
KM718V787
00372S0
DD-3754
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PDF
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timer circuit diagram
Abstract: KS57C0208
Text: KS57C0208 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C0208 single-chip CMOS microcontroller is for high performance using Samsung's newest 4-bit CPU core. With two 8-bit timer/counters, a watchdog timer, and sixteen n-channel open-drain I/O pins, the KS57C0208
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KS57C0208
KS57C0208
24-pin
7Tb4142
71L4142
timer circuit diagram
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PDF
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D37F
Abstract: icx060ak sdfw0xxx KS7213 aggc VID-96-P002-R2 71b1112 fv2 042 28.6363MHZ
Text: PRELIMINARY KS7213 CCD TIMING GENERATOR GENERAL DESCRIPTION 80-Q FP-1212 The KS7213 is a timing generator IC which generates the timing pulses necessary for color CCD image sensors. #i ORERING INFORMATION Device KS7213 FEATURES Package 80-QFP-1212 Operating Temperature
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KS7213
KS7213
80-QFP-1212
VID-96-P002-R2
71b4142
D37F
icx060ak
sdfw0xxx
aggc
71b1112
fv2 042
28.6363MHZ
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PDF
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Untitled
Abstract: No abstract text available
Text: b?E » S A M S UN G E L E C T R O N I C S INC • 7^4142 0 0 1 5 5 1 1 T3fi CMOS DRAM KM44C266C 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: tnAC I cac tnc KM44C266C-6 60ns 15ns
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KM44C266C
KM44C266C-6
110ns
KM44C266C-7
130ns
KM44C266C-8
150ns
20-LEAD
001SS25
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMA TION KS0127 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER/SCALER The KS0127 converts analog NTSC, PAL or SECAM video in composite, S-video, or component format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YCbCr or RGB
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KS0127
71b4142
0031b2b
100-QFP-1420C
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