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    71V124SA Search Results

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    71V124SA10PHG8 Renesas Electronics Corporation 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Visit Renesas Electronics Corporation
    71V124SA12PHGI8 Renesas Electronics Corporation 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Visit Renesas Electronics Corporation
    71V124SA15PHG8 Renesas Electronics Corporation 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Visit Renesas Electronics Corporation
    71V124SA15YGI8 Renesas Electronics Corporation 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Visit Renesas Electronics Corporation
    71V124SA12PHG Renesas Electronics Corporation 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Visit Renesas Electronics Corporation
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    71V124SA Price and Stock

    Renesas Electronics Corporation 71V124SA12TYG

    IC SRAM 1MBIT PARALLEL 32SOJ
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    DigiKey 71V124SA12TYG Tube 478 1
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    Renesas Electronics America 71V124SA12TYG Tube 478 1
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    Renesas Electronics Corporation 71V124SA12TYGI

    IC SRAM 1MBIT PARALLEL 32SOJ
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    Renesas Electronics Corporation 71V124SA10TYG

    IC SRAM 1MBIT PARALLEL 32SOJ
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    Renesas Electronics Corporation 71V124SA15TYG

    IC SRAM 1MBIT PARALLEL 32SOJ
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    Renesas Electronics Corporation 71V124SA15TYG8

    IC SRAM 1MBIT PARALLEL 32SOJ
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    Mouser Electronics 71V124SA15TYG8 988
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    71V124SA Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    71V124SA Integrated Device Technology 3.3V128K x 8 Static RAM Center Pwr & Gnd Pinout Original PDF
    71V124SA10PHG Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA10PHG8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA10PHGI Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA10PHGI8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA10TYG Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA10TYG8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA10YG Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA10YG8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12PHG Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA12PHG8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA12PHGI Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA12PHGI8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA12TYG Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12TYG8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12TYGI Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12TYGI8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12YG Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12YG8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12YGI Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF

    71V124SA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    71V124SA

    Abstract: 71V016SA
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 6/1/99 PCN #: SR9905-02 DATE: Product Affected: 71V016S, 71V124S, 71V016SA, 71V124SA Manufacturing Location Affected: NA 8/30/99 Date Effective:


    Original     		SR9905-02 71V016S, 71V124S, 71V016SA, 71V124SA FRC-1509-01 QCC-1795 71V124SA 71V016SA PDF

    QS001

    Abstract: 71V124SA
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 11/30/00 PCN #: SR0011-05 DATE: Product Affected: 71V016SA , 71V124SA Manufacturing Location Affected: N/A Date Effective: Contact: Title: Phone #:


    Original     		SR0011-05 71V016SA 71V124SA QS001 71V124SA PDF

    71V124SA

    Abstract: 71V016SA
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 5/3/00 PCN #: SR0003-02 DATE: Product Affected: 71V016S, 71V124S, 71V016SA, 71V124SA Manufacturing Location Affected: Date Effective: 8/3/00 Contact:


    Original     		SR0003-02 71V016S, 71V124S, 71V016SA, 71V124SA 71V016S 71V124SA 71V016SA PDF

    71V124SA

    Abstract: 71V124 IDT71V124
    Text: IDT71V124 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to


    Original     		IDT71V124 15/20ns 32-pin IDT71V124 576-bit 71V124SA. S-0004 x4033 71V124SA 71V124 PDF

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D PDF

    71V124SA

    Abstract: 71V124 IDT71V124
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124 Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to


    Original     		IDT71V124 15/20ns 32-pin IDT71V124 576-bit 71V124SA. S-0004 x4033 71V124SA 71V124 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA 10/12/15ns 12/15ns 32-pin 400-mil IDT71V124 576-bit PDF

    IDT71V124

    Abstract: IDT71V124SA 71V124SA
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit IDT71V124SA 71V124SA PDF

    SO32-2

    Abstract: IDT71V124 IDT71V124SA SO32
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA/HSA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA/HSA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit SO32-2 IDT71V124SA SO32 PDF

    71v124

    Abstract: IDT71V124 IDT71V124SA
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA 10/12/15/20ns 12/15/20ns 32-pin 400-mil IDT71V124 576-bit x4033 71v124 IDT71V124SA PDF

    71016S20PHG8

    Abstract: 71016S15YG 71256SA15Y 71256SA20YI 71256-sa15y 71256sa25tp 7164 71V124SA12YGI 6116SA25TPGI 71V424L10PHG
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: SR-09-08R1 29-Apr-2010 Last Buy Deadline for Submission of Order:


    Original     		SR-09-08R1 29-Apr-2010 26-Jul-2010 25-Oct-2010 71V424YL15PHI 71V424YL15PHI8 71V424YS10PH 71V424YS10PH8 71V424YS10PHI 71016S20PHG8 71016S15YG 71256SA15Y 71256SA20YI 71256-sa15y 71256sa25tp 7164 71V124SA12YGI 6116SA25TPGI 71V424L10PHG PDF

    71256-sa15y

    Abstract: 71256sa25tp 71256SA15TP 71016s12y 71256SA15Y 7164S20Y 71256SA20YI 71024S15Y 6116SA15TPG 7164L25YGI
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: SR-09-08 Last Buy Deadline for Submission of Order:


    Original     		SR-09-08 31-Jan-2010 31-Jan-2011 30-Apr-2011 Fa024 71V424YL15PHI 71V424YL15PHI8 71V424YS10PH 71V424YS10PH8 71256-sa15y 71256sa25tp 71256SA15TP 71016s12y 71256SA15Y 7164S20Y 71256SA20YI 71024S15Y 6116SA15TPG 7164L25YGI PDF

    SO32-3

    Abstract: SO-323 IDT71V124 IDT71V124SA SO32
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA 10/12/15ns 12/15ns 32-pin 400-mil IDT71V124 576-bit SO32-3 SO-323 IDT71V124SA SO32 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout 71V124SA Features Description ◆ The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative


    Original     		IDT71V124SA IDT71V124 576-bit PDF

    SO32-3

    Abstract: IDT71V124 IDT71V124SA SO32-2
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT 71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times


    Original     		IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit 200mV 71V124 SO32-3 IDT71V124SA SO32-2 PDF

    IDT71V124

    Abstract: IDT71V124SA
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY 71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise


    Original     		IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit 200mV 71V124 IDT71V124SA PDF

    AN106

    Abstract: C8051F015 C8051F000 C8051F001 C8051F002 C8051F005 C8051F006 C8051F010 C8051F011 C8051F012
    Text: AN106 I N T E R F A C I N G A N E X T E R N A L SRAM T O T H E C8051F000 Relevant Devices Key Points This application note applies to the following devices: • This reference design assumes a 10 ns SRAM. If the SRAM access time is greater than 45 ns, it may be necessary to add NOP commands to


    Original     		AN106 C8051F000 C8051F000, C8051F001, C8051F002, C8051F005, C8051F006, C8051F010, C8051F011, C8051consequential AN106 C8051F015 C8051F000 C8051F001 C8051F002 C8051F005 C8051F006 C8051F010 C8051F011 C8051F012 PDF

    71V124SA

    Abstract: C8051 code a7 74VHC573 C8051F000 IDT71V124 IDT71V124SA10PH
    Text: Application Note 06 Interfacing an External SRAM to the C8051F000 Cygnal C8051 IDT71V124 128Kx8 SRAM A[16:8] ADDRESS BUS A[16:8] 74VHC573 Octal Latch LE ALE AD[7:0] ADDRESS / DATA BUS D Q A[7:0] I/O[7:0] CS CS /WR WE /RD OE Figure 1. External SRAM Block Diagram.


    Original     		C8051F000 C8051 IDT71V124 128Kx8 74VHC573 C8051 100ns 20MHz AN06-1 NOV00 71V124SA code a7 74VHC573 C8051F000 IDT71V124 IDT71V124SA10PH PDF

    EPM5128LC

    Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C


    Original     		CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY7C148-35C CY7C168A-45M CY7C168A-35M+ EPM5128LC IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309 PDF

    MT 5388 BGA

    Abstract: Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux mobile switching center msc ericsson bts 6000 2x4 TTL demultiplexer cisco 2801 ericsson bts Technical specification alcatel 1511
    Text: IDT Product Selector Guide Accelerated Thinking SM Table of Contents Integrated Processors Flow-Control Management Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13


    Original     		12-03/DS/DL/BAY/10K CORP-PSG-00123 MT 5388 BGA Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux mobile switching center msc ericsson bts 6000 2x4 TTL demultiplexer cisco 2801 ericsson bts Technical specification alcatel 1511 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit PDF

    IDT71V124

    Abstract: IDT71V124SA
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA/HSA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA/HSA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit IDT71V124SA PDF

    Untitled

    Abstract: No abstract text available
    Text: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY 71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for


    OCR Scan     		IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit PDF

    S0323

    Abstract: No abstract text available
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY 71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times


    OCR Scan     		9/10/12/15/20ns 32-pin 400-mil 32pin IDT71V124SA IDT71V124 576-bit 200mV 71V124 300-mil S0323 PDF