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    76121P Price and Stock

    Rochester Electronics LLC HUF76121P3

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76121P3 Bulk 26,402 701
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    TE Connectivity DS07-61-21P-1-4011

    Circular Push Pull Connectors PLUG ASSY
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    Mouser Electronics DS07-61-21P-1-4011
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    TE Connectivity DS07-61-21P-090

    Circular Push Pull Connectors PLUG ASSY
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    Mouser Electronics DS07-61-21P-090
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    TE Connectivity DS07-61-21PW-090

    Circular Push Pull Connectors PLUG ASSY
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    Mouser Electronics DS07-61-21PW-090
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    ITT Interconnect Solutions PV76A12-10P

    D-Sub Standard Connectors
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    Mouser Electronics PV76A12-10P
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    76121P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    76121P

    Abstract: 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334
    Text: 76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF76121P3, HUF76121S3S 1999ucts 76121P 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334

    76121P

    Abstract: 133E-9
    Text: 76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF76121P3, HUF76121S3S 76121P 133E-9

    76121P

    Abstract: 121P3 HUF76121P3 HUF76121S3S HUF76121S3ST TB334 76121S 25E5
    Text: 76121P3, HUF76121S3S Semiconductor Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs [ /Title are manufactured using the HUF76 innovative UltraFET process. 121P3, This advanced process technology


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    PDF HUF76121P3, HUF76121S3S HUF76 121P3, HUF76 121S3S low30V, HUF76121 76121P 121P3 HUF76121P3 HUF76121S3S HUF76121S3ST TB334 76121S 25E5

    76121p

    Abstract: No abstract text available
    Text: 76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF76121P3, HUF76121S3S 2002lopment. 76121p

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    76121P

    Abstract: 76121 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334
    Text: 76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF76121P3, HUF76121S3S 76121P 76121 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334

    76121P

    Abstract: 76121S 76121 HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 97E4
    Text: 76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF76121P3, HUF76121S3S 76121P 76121S 76121 HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 97E4

    76121P

    Abstract: 76121S
    Text: in t e la i I 76121P3, HUF76121S3S D a ta S h e e t 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channei power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF76121P3, HUF76121S3S HUF76121S3S AN7254 AN7260. 76121P 76121S

    76121P

    Abstract: No abstract text available
    Text: 76121P3, HUF76121S3S S em iconductor Data Sheet 47A, 30 V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF76121P3, HUF76121S3S HUF76121 76121P