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    7B00 Search Results

    7B00 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001AFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    5P49V5907B000NDGI8 Renesas Electronics Corporation VersaClock® 5 Low Power Programmable Clock Generator Visit Renesas Electronics Corporation
    5P49V5927B000NLGI Renesas Electronics Corporation VersaClock® 5 Low Power Programmable Clock Generator Visit Renesas Electronics Corporation
    5P49V5927B000NLGI8 Renesas Electronics Corporation VersaClock® 5 Low Power Programmable Clock Generator Visit Renesas Electronics Corporation
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    7B00 Price and Stock

    Pulse Electronics Corporation BSCQ000603030N7B00

    INDUCTOR RF
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    DigiKey BSCQ000603030N7B00 Digi-Reel 119,990 1
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    BSCQ000603030N7B00 Cut Tape 119,990 1
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    BSCQ000603030N7B00 Reel 105,000 15,000
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    Sager BSCQ000603030N7B00 60,000
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    Pulse Electronics Corporation BSCQ000603032N7B00

    FIXED IND 2.7NH 400MA 320MOHM SM
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    DigiKey BSCQ000603032N7B00 Reel 75,000 15,000
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    Avnet Americas BSCQ000603032N7B00 Reel 22 Weeks 60,000
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    BSCQ000603032N7B00 Cut Tape 60,000
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    TTI BSCQ000603032N7B00 Reel 60,000 15,000
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    Avnet Asia BSCQ000603032N7B00 22 Weeks 180,000
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    Master Electronics BSCQ000603032N7B00
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    New Advantage Corporation BSCQ000603032N7B00 30,000 1
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    Toshiba America Electronic Components TB67B008FTG,EL

    IC MOTOR DRIVER 5.5V-22V 24WQFN
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    DigiKey TB67B008FTG,EL Reel 20,000 5,000
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    Pulse Electronics Corporation BSPQ000603041N7B00

    FIXED IND CHIP CERM 1.7NH 800MA
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    DigiKey BSPQ000603041N7B00 Digi-Reel 14,975 1
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    BSPQ000603041N7B00 Cut Tape 14,975 1
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    Toshiba America Electronic Components TB67B001FTG,EL

    IC MOTOR DRIVER 36VQFN
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    DigiKey TB67B001FTG,EL Cut Tape 5,332 1
    • 1 $4.27
    • 10 $2.76
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    TB67B001FTG,EL Digi-Reel 5,332 1
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    TB67B001FTG,EL Reel 2,000 2,000
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    Mouser Electronics TB67B001FTG,EL 18,689
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    • 10 $1.71
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    Find more 7B00 price and stock on Findchips.com

    7B00 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AT49BV802A

    Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


    Original     		PDF 3405E AT49BV802A AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu

    Untitled

    Abstract: No abstract text available
    Text: LM98725 LM98725 3 Channel, 16-Bit, 81 MSPS Analog Front End with LVDS/CMOS Output, Integrated CCD/CIS Sensor Timing Generator and Spread Spectrum Clock Generation Literature Number: SNAS474D LM98725 3 Channel, 16-Bit, 81 MSPS Analog Front End with LVDS/ CMOS Output, Integrated CCD/CIS Sensor Timing


    Original     		PDF LM98725 LM98725 16-Bit, SNAS474D

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


    Original     		PDF Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    001C

    Abstract: 100C 500C AN58 AN74 DS2437
    Text: DS2437 PRELIMINARY DS2437 Smart Battery Monitor FEATURES PIN ASSIGNMENT • Unique 1–WireTM interface requires only one port pin for communication DQ 1 16 VDD NC 2 15 NC VAD 3 14 NC NC 4 13 X1 VSENS+ 5 12 NC VSENS– 6 11 X2 NC 7 10 NC AGND 8 9 • Provides unique 64–bit serial number to battery packs


    Original     		PDF DS2437 001C 100C 500C AN58 AN74 DS2437

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


    Original     		PDF EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000

    C900

    Abstract: DS2434 DS2436 DS2436S PR35 2465H
    Text: DS2436 PRELIMINARY DS2436 Battery ID/Monitor Chip FEATURES • On–board A/D converter monitors battery voltage for end–of–charge and end–of–discharge determination PACKAGE OUTLINE PR35 PACKAGE DALLAS DS2434 DALLAS DS2436 • Eliminates thermistors by sensing battery tempera-


    Original     		PDF DS2436 DS2434 C900 DS2434 DS2436 DS2436S PR35 2465H

    110R

    Abstract: S29GL128N
    Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this


    Original     		PDF Am29LV6402M S29GL128N 110R

    256Kbytes

    Abstract: MB90340 F2MC-16LX F345C IC BOSCH QFP F347S P1487 F343 348s 7984
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-13730-1E 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90340 Series MB90F342/C S , MB90F343/C(S), MB90F345/C(S), MB90F346/C(S), MB90F347/C(S), MB90F349/C(S), MB90341/C(S), MB90342/C(S), MB90346/C(S), MB90347/C(S),


    Original     		PDF DS07-13730-1E 16-bit F2MC-16LX MB90340 MB90F342/C MB90F343/C MB90F345/C MB90F346/C MB90F347/C MB90F349/C 256Kbytes F345C IC BOSCH QFP F347S P1487 F343 348s 7984

    M29W640DB

    Abstract: M29W640D M29W640DT A0-A21 6A000
    Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns


    Original     		PDF M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000

    M420000000

    Abstract: FSB073 3FE00
    Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector


    Original     		PDF Am42DL640AG 16-Bit) 73-Ball 5M-1994. M420000000 FSB073 3FE00

    LH28F800BJHB-PTTL10

    Abstract: FC004 ap007 7D002
    Text: Date 8M x8/x16 Flash Memory LH28F800BJHB-PTTL10 Jul. 6. 2001 LHF80J24 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written


    Original     		PDF x8/x16) LH28F800BJHB-PTTL10 LHF80J24 AP-001-SD-E AP-006-PT-E AP-007-SW-E LH28F800BJHB-PTTL10 FC004 ap007 7D002

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112

    NAND FLASH SAMSUNG

    Abstract: 848a hs010 MARKING 016H
    Text: Flash Cards ATA45 Series White Electronic Designs ATA45 Series FLASH CARDS 8MB to 512MB PRODUCT DESCRIPTION ATA45 series Flash ATA cards are built with NAND flash memory components operating as solid-state disk. They comply with the PC card ATA standard and are suitable for


    Original     		PDF ATA45 512MB 128MB 256MB ATA45 NAND FLASH SAMSUNG 848a hs010 MARKING 016H

    nec V850e2m manual

    Abstract: v850E2M architecture v850e2 architecture
    Text: Cover User’s Manual 32 V850E2/PG4-L User’s Manual: Hardware Renesas microcomputers V850 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original     		PDF V850E2/PG4-L R01UH0336EJ0102 nec V850e2m manual v850E2M architecture v850e2 architecture

    LHF12F16

    Abstract: wp 146 LH28F128BFHT-PTTL75A
    Text: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		PDF LH28F128BFHT-PTTL75A LHF12F16) FM046010 LHF12F16 LHF12F16 wp 146 LH28F128BFHT-PTTL75A

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original     		PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96

    100-Pin Package Pin-Out Diagram

    Abstract: C343I ZF MicroSystems 486
    Text: MAX 7000 ju iä ti MAX Programmable Logic Device Family J a n u a ry 1998. ver. 5 Features. D ata S h e e t • ■ ■ ■ ■ ■ ■ ■ High-performance, EEPROM-based programmable logic devices PLDs based on second-generation Multiple Array M atrix (MAX)


    OCR Scan     		PDF 7000S 7256E 192-Pin 208-Pin 100-Pin Package Pin-Out Diagram C343I ZF MicroSystems 486

    47C620

    Abstract: 47c820
    Text: TOSHIBA TMP47C020G CMOS 4-B it Microcontrollers ment and operational confirmation of the 47C620/820 applica­ tion systems programs . TMP47C020G The 47C020, which is equipped with an EPROM as program memory, is a piggyback type evaluator chip used for develop­


    OCR Scan     		PDF TMP47C020G 47C020, 47C620/820 47C020 47C620/820. QFC80 00-FFH 47C620 47c820

    Untitled

    Abstract: No abstract text available
    Text: DS1622 A D V A N C E D IN FO RM ATIO N DALLAS s e m ic o n d u c to r DS1622 3V Digital Thermometer and Thermostat FEATURES PIN ASSIGNMENT • Temperature measurements require no external com­ ponents SDA SCL • Measures temperatures from -55°C to +125°C in


    OCR Scan     		PDF DS1622 2bl4130 QD13734

    Untitled

    Abstract: No abstract text available
    Text: î ft SEMICONDUCTOR DALLAS DS2436 Battery ID/Monitor Chip PACKAGE OUTLINE FEATURES • Unique 1-Wire interface requires only one port pin for communication ■ Provides unique 64-bit identification number to battery packs ■ On-board A/D converter monitors battery


    OCR Scan     		PDF DS2436 64-bit 256-bit

    Untitled

    Abstract: No abstract text available
    Text: DS1621 DALLAS SEMICONDUCTOR DS1621 Digital Thermometer and Thermostat FEATURES PIN ASSIGNMENT • Measures temperatures from -5 5 °C to +125°C in 0.5°C increments. Fahrenheit equivalent is -6 7 °F to 257°F in 0.9°F increments SDA □ E 1 SCL □ E 2


    OCR Scan     		PDF DS1621 DS1621S 2bl413D DS1621