01-I04
Abstract: KM641001A KM641001A-15 KM641001A-20
Text: PRELIMINARY KM641001A CMOS SRAM 256K x 4 B it With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words
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KM641001A
KM641001A-15
KM641001A-17
KM641001A-20
KM641001AJ
28-SQJ-400
KM641001A
576-bit
OOPm53
01-I04
KM641001A-15
KM641001A-20
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KM44C4104bk
Abstract: cd-rom circuit diagram
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4
KM44C4104BK
7Tbm42
0034bb2
KM44C4104bk
cd-rom circuit diagram
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gd243
Abstract: No abstract text available
Text: KM29N32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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KM29N32000TS/RS
250us
gd243
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KM44V4004BS
Abstract: irf ddt D0350
Text: KM44 V 4 0 0 4 B S CMOS DR A M ELECTRONICS 4 M x4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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16Mx4,
512Kx8)
KM44V4004BS
7Tb414B
D0350fl3
KM44V4004BS
irf ddt
D0350
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asea EH 9-10
Abstract: J 6920 A ite 8892 7420 pin configuration st 9318 KS8805BD 7809 A PI 505 7809 ct 8500-29 B KS8805B
Text: KS8805B UNIVERSAL PROGRAMMABLE PLL INTRODUCTION 1S-DIP-300A The KS8805B is a superior low power-programmable dual frequency synthesizer PLL which can be used in high performance CT-1 cord less phone system with frequency range under 60 MHz in ail over the
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KS8805B
KS8805B
16-DIP-300A
16-SOP-225
16-DIP-300A
KS8805BD
455KHZ
25KHZ)
asea EH 9-10
J 6920 A
ite 8892
7420 pin configuration
st 9318
7809 A PI 505
7809 ct
8500-29 B
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dram zip
Abstract: KM44C256D KM44C256
Text: KM44C256D CMOS DRAM 256K x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -6, -7 or -8 , power consumption (Normal
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KM44C256D
256Kx4
KM44C256D/D-L
D0S01S0
dram zip
KM44C256D
KM44C256
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3hM22
Abstract: pin configuration of 8251 KM64BV4002J-12 KM64BV4002J-15
Text: KM64BV4002 CMOS SRAM 1Mx4Bit With / OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)
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KM64BV4002
KM64BV4002J-12
160mA
KM64BV4002J-13
KM64BV4002J-15
KM64BV4002J
32-SOJ-4QO
KM64BV4002
304-bit
3hM22
pin configuration of 8251
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KM44C4100BS
Abstract: BC3 csr data sheet tsop 138 TSOP 173 g KM44C4100B N300N 3bm42 512Kx8 bit
Text: KM44C4100BS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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KM44C4100BS
34STB
KM44C4100BS
BC3 csr
data sheet tsop 138
TSOP 173 g
KM44C4100B
N300N
3bm42
512Kx8 bit
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17N55
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS SSH17N60/55 FEATURES • L o w e r R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysiiicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSH17N60/55
SSH17N60
SSH17N55
17N55
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Untitled
Abstract: No abstract text available
Text: K M 4 1C 4 0 0 0 D J CMOS DRAM ELECTRONICS 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM41C4000DJ
0034D25
7Tb4142
D03402fci
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Untitled
Abstract: No abstract text available
Text: KM616V1002A/AL CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly
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KM616V1002A/AL
KM616V1002A/AL-12
KM616V1002A/AL-15
KM616V1002A/AL-17
KM616V1002A/AL-20
Pi-400
44-TSOP2-400F
003124b
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Untitled
Abstract: No abstract text available
Text: KM48V514DT CMOS DRAM ELECTRONICS 5 1 2 K x 8 B i t C M O S Dynamic R A M with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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KM48V514DT
512Kx8
16Mx4,
512Kx8)
7Tb414B
00357b0
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dc/SMD ad34a
Abstract: No abstract text available
Text: K M 4 4 V 16004AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. ,
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16004AK
16Mx4
KM44V16004AK
7TL4142
7Tb414B
dc/SMD ad34a
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MARKING 9AB
Abstract: 9AB TRANSISTOR Code 9CB BC859 BC846 BC856 BC860 sot 23 mark 9CB
Text: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC859, BC860 • Complement to BC846 . BC8S0 SO T -2 3 ABSOLUTE MAXIMUM RATINGS Ta=25°C
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BC856/857/858/859/860
BC859,
BC860
BC846
BC856
BC857/860
BC858/859
MARKING 9AB
9AB TRANSISTOR
Code 9CB
BC859
BC846
BC856
BC860
sot 23 mark 9CB
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KM28C64B
Abstract: No abstract text available
Text: SAM SUN G E L E C T R O N I C S INC b?E D • TibmMZ □□Ibô'ïE 777 H S M â K PRELIMINARY KM28C64B/KM28C65B CMOS EEPROM 8 K x 8 Bit C M O S Electrically Erasable PR O M FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64B/65B: Commercial
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KM28C64B/KM28C65B
KM28C64B/65B:
KM28C64B/65BI:
KM28C65B)
64-Byte
1S55HX
1555H
KM28C64B
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mask rom 4M
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E » DG17GDÔ b l 3 KM23C41 OOB G/FP SriGK CMOS MASK ROM 4M-Bit (512K x 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.)
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DG17GDÃ
KM23C41
8/256K
120ns
50/iA
40-pin
KM23C4100B
7Tb414B
mask rom 4M
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Untitled
Abstract: No abstract text available
Text: KM48C514B, KM48V514B CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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KM48C514B,
KM48V514B
512Kx8
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Untitled
Abstract: No abstract text available
Text: KM29N16000AR Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29N16000AR
KM29N16000AT/R
264-byte
250ps
GG314f
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Samsung KMM364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The KMM372C225A - 6 KMM372C225A - 7
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KMM364C124AJ
KMM364C124AJ
1Mx64
1Mx16,
KMM372C225A
1Mx16bit
44-pin
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GD341
Abstract: taa 723 KM44C1000D KM44V1000D km44c1000dj-7
Text: KM44C1000DJ CMOS DRAM ELE C T R O N IC S 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44C1000DJ
003mM?
GD341
taa 723
KM44C1000D
KM44V1000D
km44c1000dj-7
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"Video RAM"
Abstract: No abstract text available
Text: KM4216C/V255 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 C M OS DRAM. The RAM port has a write per bit m ask capability. * Dual port Architecture 256K x 16 bits RAM port
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4216C/V255
256KX
110ns
130ns
150ns
KM4216C255
KM4216V255
120mA
110mA
"Video RAM"
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12,15,17,20 ns Max. • Low Power D issipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.) KM681002A-15 : 190 mA (Max.)
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KM681002A
KM681002A-12
KM681002A-15
KM681002A-17
81002A-20
KM681002AJ
32-SOJ-400
KM681002AT
32-TSOP2-4QOF
KM681002A
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM44C4103A/AL/ALL/ASL 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRA C tCAC tR C K M 44C 4103 A /Ä L /Ä L L /A S L -5 50n s 13ns 9 0 ns K M 44C 4 1 0 3 A / A L /A L L /A S L -6 60n s 15n s
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KM44C4103A/AL/ALL/ASL
comKM44C4103A/AL/ALL/ASL
28-LEAD
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Untitled
Abstract: No abstract text available
Text: KMM372V1600AS ELECTRONICS DRAM Module KMM372V1600AK/AS & KMM372V1680AK/AS Fast Page Mode 16Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V160 8 0 A is a 16M bit x 72 • Part Identification Dynamic RAM high density memory module. The
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KMM372V1600AS
KMM372V1600AK/AS
KMM372V1680AK/AS
16Mx72
16Mx4,
KMM372V160
KMM372V1600AK
400mil
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