7TFCI4142 Search Results

SRAM timing

Contextual Info: SAMSUNG E L E C TRONICS INC b7E J> • 7TbmN2 0Ü177M2 KM79C86 ISfi M S I I S K CMOS SRAM 3 2 K x9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • Synchronous Operation The KM79C86 is a 294,912 bit S ynchronou s S tatic Ran­

Contextual Info: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8

Contextual Info: KM44V41OOA/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m s u n g K M 4 4V 41 O O A /A L /A L L /A S L is a h ig h s p e e d C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D y n a m ic R a n d o m • Performance range:

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7Tb414E 00 13 3 2 8 5=13 KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION Perform ance range: KM44C1012A-7 KM44C1012A-8 KM44C1012A-10 tnAC tcAc I rc

KM41C4000A

Contextual Info: SAMSUNG ELECTRONICS INC b4E ]> • 7 ^ 4 1 4 2 00144^4 031 « S A C K KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung

Contextual Info: KM6264BL / BL-L CMOS SRAM 8Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,100, 120 ns Max. • Low Power Dissipation Standby (CMOS): 10nW(Typ.) L Version 5(iW (Typ.) LL Version Operating : 55mW(Typ.) • Single 5V±10% Power Supply

kje w6

Contextual Info: KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.

Contextual Info: Advance Information KM29V64000TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000TS/RS is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its NAND

Contextual Info: PRELIMINARY KS0786 CMOS DIGITAL INTEGRATED CIRCUIT In tro d u c tio n 80 C H A N N E L SEG M EN T DRIVER FOR LCD D O T MATRIX The K S0786 is a LCD d rive r LSI w hich is fa b rica te d b y lo w p o w e r C M O S high vo lta g e p roce ss te ch n olo gy. This

KM416C1200a

Abstract: km416c1200 KM416V1000A samsung pram V1000A C1200A C1000A
Contextual Info: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 1,048,576 x16 bit Fast Page M ode C M O S D RAM s. Fast P age M ode o ffe rs high speed random a c c e s s o f m em o ry ce lls w ith in th e sa m e row. P o w e r su p p ly vo lta g e + 5 .0 V o r + 3 .3V , refresh

KM44C1000D

Abstract: KM44V1000D
Contextual Info: K M 4 4 V 1OOODT ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access