Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICO NDUCT OR INC 05 DE|7U4145 □□Qbblfl KS54HCTLS O Â 1 / Q A O KS74HCTLS o Q U o Q Z 10-Bit Bus Interface D-Type Latches with 3-State Outputs Preliminary Specifications FEATURES DESCRIPTION . These 1O-bii bus interface latches feature three state out
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7U4145
KS54HCTLS
KS74HCTLS
10-Bit
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR KS54HCTLS KS74HCTLS INC □2 DE| 7U4145 00Qb3D7 I | on 8-1np ut Nand Gate FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of C M O S • High-Drive-Current outputs:
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7U4145
00Qb3D7
KS54HCTLS
KS74HCTLS
54/74LS
7Tb414S
90-XO
14-Pin
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KM44C1004C
Abstract: No abstract text available
Text: KM44C1004C/CL/CSL CMOS DRAM 1M x4B it CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C tH P C KM44C1004C/CL/CSL-5 50ns 13ns 90ns 20ns KM44C1D04C/CL/CSL-6 60ns 15ns 110ns 24ns KM44C1004C/CUCSL-7
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KM44C1004C/CL/CSL
KM44C1004C/CL/CSL-5
KM44C1D04C/CL/CSL-6
110ns
KM44C1004C/CUCSL-7
130ns
KM44C1004C/CL/CSL-8
150ns
cycle/16ms
Norm004C/CL/CSL
KM44C1004C
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29V040
Abstract: No abstract text available
Text: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register : 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us
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KM29V040T
512Kx8Bit
512Kx8
500us
400mil/0
KM29V040T
KM29V040
-TSOP2-400F
-TSQP2-400R
29V040
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Untitled
Abstract: No abstract text available
Text: KM44C41OOA/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tR C KM44C4100/VAL/ALL/ASL-5 50ns 13ns 90ns KM44C4100A/AL/ALL/ASL-6 60ns 15ns 110ns KM44C41 OOA/AL/ALL/ASL-7 70ns
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KM44C41OOA/AL/ALL/ASL
KM44C4100/VAL/ALL/ASL-5
KM44C4100A/AL/ALL/ASL-6
110ns
KM44C41
130ns
KM44C4100A/AL/ALL/ASL-8
150ns
0D11E42
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km41c1001
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC S3E D • 7Tbm42 KM41C1001A CMOS DRAM T '4 -6 '5 1 3 - 1 M x 1 Bit Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: tcAc tnc 70ns 20ns 130ns KM41C1001A- 8 80ns 20ns 150ns KM41C1001A-10 100ns 25ns 180ns
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7Tbm42
KM41C1001A
KM41C1001A
18-LEAD
7Tb414E
20-LEAD
20-PIN
km41c1001
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Untitled
Abstract: No abstract text available
Text: KMM466S424AT NEW JEDEC SDRAM MODULE KMM466S424AT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S424AT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM466S424AT
KMM466S424AT
4Mx64
4Mx16,
400mil
144-pin
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