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Catalog Datasheet	MFG & Type	Document Tags	PDF
BSY95A Abstract: No abstract text available Text: b ^ E D • bbSB'IBl U Q 2 7 ^5 E a n N AMER PHILIPS/DISCRETE APX BSY95A A SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistors in a TO-18 metal envelope intended for general purpose low level switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter	OCR Scan	BSY95A 0027c BSY95A	PDF
Untitled Abstract: No abstract text available Text: LIE » N AUER PHILIPS/DISCRETE • bbS3^3i □□eaioi Tb7 l IAPX 2N2483 2N2484 SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These transistors are primarily intended for use in high performance, low-level, low-noise amplifier	OCR Scan	2N2483 2N2484 10kJ2	PDF
BCX23 Abstract: No abstract text available Text: SbE D PHILIPS INTERNATIONAL • 711D62b 004507b 03=1 ■ P H I N _ T —2 7 - 2 P h ilip s S em ico n d u c to rs BCX23 Data sheet status Preliminary specification date of issue June 1990 Silicon planar epitaxial transistor QUICK REFERENCE DATA -VCEO C O N D ITIO N S	OCR Scan	711DB2b BCX23 BCX23	PDF
UC3425 Abstract: transistor k 2723 IC 541 BSX49 IEC134 Text: PHILIPS IN TE RNATIONAL Data sheet status Preliminary specification date of issue August 1990 SbE D m 711002b 0G42mfi übO MP H I N BSX49 t 2 7 -2 3 - Silicon planar epitaxial transistor QUICK REFERENCE DATA SYMBOL VcBO VCEO lc Ptot Tj hFE PARAMETER collector-base voltage	OCR Scan	711002b BSX49 7Z69420 UC3425 transistor k 2723 IC 541 IEC134	PDF
2N2222A 331 Abstract: 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a Text: N AflER PHILIPS/DISCRETE b'lE D bb53c131 QDEAQfibi T5D I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-18 metal envelope with the collector connected to the case. They are primar ily intended for high speed switching. The 2N2222 is also suitable fo r d.c. and v.h.f./u.h.f. amplifiers.	OCR Scan	bb53c 2N2222 2N2222A 2N2222 7Z85736 2N2222A 331 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE blE D • bfc.SB'lBl DDS7Mtm 733 « A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. The BC107 is prim arily intended fo r use in driver stages o f audio amplifiers and in signal processing	OCR Scan	BC107 BC108 BC109 BC107 bb53c DDS7S03	PDF
BS25 Abstract: BCX22 IEC134 Silicon Epitaxial Planar Transistor philips Text: PHILIPS INTER N A T I O N A L SbE m D 711002b 14^3 0042072 I PH IN Philips Sem iconductors BCX22 D a ta sheet status Preliminary specification d a te o f issue June 1990 Silicon planar epitaxial transistor Q U IC K R E F E R E N C E D A TA SYM BOL PARAM ETER	OCR Scan	711002b BCX22 BS25 BCX22 IEC134 Silicon Epitaxial Planar Transistor philips	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E D bb53^31 □□E7bED 53b BCY56 BCY57 IAPX A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. They are intended for general purpose very high-gain low level and low-noise applications. Moreover,	OCR Scan	BCY56 BCY57	PDF
bsx20 Abstract: No abstract text available Text: bb53T31 0Q134AS b • BSX19 BSX20 A ~ V - i 5 '- / 5" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes, primarily intended for high-speed saturated switching and h.f. amplifier applications. QUICK REFERENCE DATA BSX19 BSX20 v CBO	OCR Scan	bb53T31 0Q134AS BSX19 BSX20 lcb53T31 00124Tb bsx20	PDF
Untitled Abstract: No abstract text available Text: -j— ,1 - N AMER PHILIPS/DISCRETE 25E D • ^53131 . 0017265 b ■ BST97 A T -3 g -a £ T N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-18 package and designed fo r use as line current interrupter in telephone sets and fo r application in relay, high speed and line transformer drivers.	OCR Scan	BST97 7Z94057 bbS3131 T-35-25	PDF
BCX22 Abstract: Silicon Epitaxial Planar Transistor philips TCA 200 y Text: L.TE J> N AMER PHILIPS/DISCRETE bfc.sa'm □QE7bGfl TBT • APX P h ilip s S e m ic o n d u c to rs D ata sheet status Preliminary specification d ate of issue June 1990 BCX22 Silicon planar epitaxial transistor QUICK REFERENCE DATA SYMBOL Tj hFE PARAMETER	OCR Scan	BCX22 BCX22 Silicon Epitaxial Planar Transistor philips TCA 200 y	PDF
Untitled Abstract: No abstract text available Text: N AI1ER PHILIPS/DISCRETE bTE T> bb53^31 002612^ OMb I IAPX 2N2907 2N2907A l SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P medium power transistors in TO-18 metal envelopes designed primarily for high-speed switching and driver applications for industrial service.	OCR Scan	2N2907 2N2907A	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bbSB'lBl DDEfilBS 4T0 • IAPX b'JE T> A ZN ZyU b 2N2906A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P medium power transistors in TO-18 metal envelopes designed primarily for high-speed switching and driver applications for industrial service.	OCR Scan	2N2906A 2N2906	PDF
smd npn 2n2222 Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200 Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.	OCR Scan	2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200	PDF