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    809 NPN Search Results

    809 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    809 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    equivalent ic to PAL 007 E MOSFET

    Abstract: mini Audio transformer 200k to 1k ct input LM35 sensor and NPN transistor based automatic fan controller 8051 elevator control interfacing zener diodes color coded cathode LS414B AT8958252-24PC melf zener diodes color code atmel 89s8252 sample code 89S8252 equivalent
    Text: INDEX Order Code Description Manufacturer 789-719 789-707 792-731 792-561 704-453 704-441 792-160 791-787 790-722 703-722 703-710 597-351 597-363 597-375 941-864 705-263 663-773 705-275 704-957 786-809 786-810 786-822 795-410 505-031 792-962 793-061 793-358


    Original     		PDF CLC408AJE: CLC408AJP: CLC436AJP: CLC533AJP: HDSP-4850 HDSP-4832 HDSP-4836 HLCP-J100 HLMP-2598 HLMP-2599 equivalent ic to PAL 007 E MOSFET mini Audio transformer 200k to 1k ct input LM35 sensor and NPN transistor based automatic fan controller 8051 elevator control interfacing zener diodes color coded cathode LS414B AT8958252-24PC melf zener diodes color code atmel 89s8252 sample code 89S8252 equivalent

    SOT172D

    Abstract: RF POWER TRANSISTOR NPN BLV90 MDA393
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV90 UHF power transistor Product specification February 1996 Philips Semiconductors Product specification UHF power transistor BLV90 DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.


    Original     		PDF BLV90 OT-172D) SOT172D RF POWER TRANSISTOR NPN BLV90 MDA393

    2N2222A TO-92

    Abstract: 2n2222 to92 2n2222 to-92 transistor 2n2222a data sheet to-92 2N2219 transistor equivalent 2n2906 2N2907 PNP Transistor to 92 2N3904-152 2n2907 TO-92 2N2907 NPN Transistor
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP LOW-POWER SWITCHING TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) NPN COMPL. PAGE 2N2905


    Original     		PDF 2N2905 2N2219 2N2905A 2N2219A 2N2906 2N2222 2N2906A 2N2222A 2N2907 2N2222A TO-92 2n2222 to92 2n2222 to-92 transistor 2n2222a data sheet to-92 2N2219 transistor equivalent 2n2906 2N2907 PNP Transistor to 92 2N3904-152 2n2907 TO-92 2N2907 NPN Transistor

    TRIMMER capacitor 5-60 pF

    Abstract: vhf linear amplifier philips carbon film resistor SC08a GP 809 Transistor 2222 philips Trimmer 60 pf BLY89 carbon resistor vk 200
    Text: VHF LINEAR Ampl. 25 W BLY89 Page 1 of 3 VHF Linear Amplifier BLY 89C There is not a personal design on this page, just I've transfered useful notes from PHILIPS RF Bipolar Transistors - Data HandBook (1993 Edition), about BLY89C VHF Power transistor, which is very popular among Amateur Radio "homebrewers".


    Original     		PDF BLY89) BLY89C SC08a 20and 20Settings\Administrator\My 20Documents\bly TRIMMER capacitor 5-60 pF vhf linear amplifier philips carbon film resistor SC08a GP 809 Transistor 2222 philips Trimmer 60 pf BLY89 carbon resistor vk 200

    Untitled

    Abstract: No abstract text available
    Text: NE III EN6LAND SEMICONDUCTOR S'ìE ]> bSt.M R'ìa OOOOOM' ì NPN TO-66 077 H N ES lc M A X = 1 -7 A V ce<xsus) = 3 5 -4 0 0 V fi = .75-50 MHz Case 809 T '3 S ' O / le {MAX) W 2N6049 2N6211 2N6212 2N6213 55 250h 300* 400h 4 1 5 5 25-100 5/4 40-200® 5/10


    OCR Scan     		PDF 2N6049 2N6211 2N6212 2N6213 2N3740 2N3741 2N6372 2N6373 2N6374 2N5956

    mcd206

    Abstract: philips Trimmer 60 pf BLV13 MCD211 C106W
    Text: Philips Sem iconductors VHF power transistor • bSE D DQbSûES P H IL IP S T ll PHI N Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. IN T E R N A TIO N A L NPN silicon planar epitaxial transistor encapsulated in a 4-lead


    OCR Scan     		PDF BLV13 OT123 PINNING-SOT123 MCD210 MBA451 MCD211 mcd206 philips Trimmer 60 pf BLV13 MCD211 C106W

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bb.53331 □□33117 311 • APX BLV90/SL h3E D J V U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile.


    OCR Scan     		PDF BLV90/SL OT-172D)

    TRIMMER capacitor 160 pF

    Abstract: 7z97443 PTFE trimmer capacitor 4312 020 36642
    Text: bSE » Q 711002b QOtiBDlM 5ÖS HIPHIN BLV90/SL _ PHILIPS INTERNATIONAL_ _ U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in m obile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.


    OCR Scan     		PDF BLV90/SL OT-172D) TRIMMER capacitor 160 pF 7z97443 PTFE trimmer capacitor 4312 020 36642

    transistor d 1991 ar

    Abstract: No abstract text available
    Text: b'lE D N AUER P H ILIP S /D IS C R E TE • b b S B 'm 00 2T 7 22 074 H A P X Product specification Philips Semiconductors BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


    OCR Scan     		PDF BLY91C/01 T122F1 OT122F bb53131 transistor d 1991 ar

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 D05T740 OTT Philips Semiconductors APX ^roduc^pecificatlon VHF power transistor BLY92C/01 " " " " — • N A f1 E R p H IL IP S /]> IS C R E T E p PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


    OCR Scan     		PDF bb53T31 D05T740 BLY92C/01 -SOT122F Lb53T31 00ET747

    transistor tt 2222

    Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92
    Text: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


    OCR Scan     		PDF BLY92C/01 OT122F PINNING-SOT122F_ MBB012 transistor tt 2222 C7f TRANSISTOR BLY92C BLY92C/01 BLY92

    1117 S Transistor

    Abstract: sot122f
    Text: N AUER PH I L I PS /D IS CR ETE b'îE D • ^53131 002^722 07M H A P X Philips Sem iconductors Product_gpgcitication BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


    OCR Scan     		PDF BLY91C/01 OT122F OT122F_ 1117 S Transistor sot122f

    B303D

    Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
    Text: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.


    OCR Scan     		PDF BLV91/SL OT-172D) 711005b DGb3034 BLV91/SL B303D TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor

    RF POWER TRANSISTOR NPN vhf

    Abstract: BLY92C ceramic capacitor 47 pf Z609 philips ferroxcube transistor 4312 philips Trimmer 60 pf
    Text: P hilips Sem iconductors J’b53T31 0 0 5 Iì 7 4 Q GTT • A P X ^ductspecificatlon BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE bTE D PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


    OCR Scan     		PDF OT122F PINNING-SOT122F RF POWER TRANSISTOR NPN vhf BLY92C ceramic capacitor 47 pf Z609 philips ferroxcube transistor 4312 philips Trimmer 60 pf

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF BLX95 7Z66943

    34D SERIES CAPACITOR

    Abstract: BLY92 BLY92C Philips MBB .J275
    Text: 711065b Philips Semiconductors PHILIPS INT ERN AT ION AL D0 b 3 b 3 7 5 7 fl P H IN Product specification b5E » VHF power transistor BLY92C/01 DESCRIPTION PIN CONFIGURATION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


    OCR Scan     		PDF D0b3b37 BLY92C/01 OT122F1A OT122F M34326 11J1U 34D SERIES CAPACITOR BLY92 BLY92C Philips MBB .J275

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE blE D IAPX bbS3R31 002flflb2 7UH l BLU60/28 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile


    OCR Scan     		PDF bbS3R31 002flflb2 BLU60/28 BLU60/28 OT119) bbS3T31 nt44i MCA440 MCA439

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D bb53^31 □DE‘1131 b'U I IAPX BLV91/SL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.


    OCR Scan     		PDF BLV91/SL OT-172D)

    BLU60/28

    Abstract: No abstract text available
    Text: L.5E D PHILIPS INTERNATIONAL • 711002b OObSTST 125 l B LU 6 0 /2 8 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile


    OCR Scan     		PDF 711002b BLU60/28 BLU60/28 OT119) 00bE7bS

    smd transistor xf

    Abstract: smd 809 x transistor blt50 4F smd transistor transistor 2222 smd transistor 809 philips Trimmer 60 pf transistor 3B1 smd UHF TRANSISTOR transistor 4F
    Text: P h ilip ^ e m ic o n d u c to r ^ ^ B i 711D Ö 2b G D b 'iB b ö 142 H 1 P H IN ^ P jjo d u c ^ p e c ific a tjo n UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION BLT50 QUICK REFERENCE DATA


    OCR Scan     		PDF 711062b BLT50 OT223 PINNING-SOT223 MEA222 UEA223 smd transistor xf smd 809 x transistor blt50 4F smd transistor transistor 2222 smd transistor 809 philips Trimmer 60 pf transistor 3B1 smd UHF TRANSISTOR transistor 4F

    BLY94

    Abstract: philips bly94
    Text: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 002T75fl BLY94 7Z67S60 BLY94 philips bly94

    smd transistor e7

    Abstract: smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GC smd transistor UHF TRANSISTOR GP 809 max 809 ls
    Text: N AUER P H I L I P S / D I S C R E T E s iiiiv u n u u c io r s LTE B bbS3 S31 • DDSÖ7 3 7 BLT50 UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION QUICK REFERENCE DATA RF performance at Ts < 60 °C in a common emitter class-B test circuit see


    OCR Scan     		PDF bbS3S31 BLT50 OT223 OT223 MEA222 UBtM51 UEA223 smd transistor e7 smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GC smd transistor UHF TRANSISTOR GP 809 max 809 ls

    BLX95

    Abstract: TRIMMER capacitor 10-40 pf G0b35 ptfe trimmer philips 100 pf International Power Sources PHILIPS 4312 amplifier IEC134 uhf trimmer capacitor Miniature Ceramic Plate Capacitors 2222 philips philips 2222 trimmer
    Text: b5E D 711DÖ2b 0Db353fl 523 « P H I N BLX95 PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transm itting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF 0Db353fl BLX95 VCC-28V BLX95 TRIMMER capacitor 10-40 pf G0b35 ptfe trimmer philips 100 pf International Power Sources PHILIPS 4312 amplifier IEC134 uhf trimmer capacitor Miniature Ceramic Plate Capacitors 2222 philips philips 2222 trimmer

    transistor tt 2222

    Abstract: smd 809 x transistor transistor SMD S33
    Text: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures


    OCR Scan     		PDF 0DSfl737 BLT50 OT223 bbS3R31 0DS87M3 transistor tt 2222 smd 809 x transistor transistor SMD S33