Untitled
Abstract: No abstract text available
Text: Package outline Studless ceramic package; 4 leads SOT172D D A Q c D1 H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 H Q mm 3.71 2.89 3.31 3.04 0.89 0.63 0.16 0.10 5.20 4.95
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OT172D
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sot172d
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studless ceramic package; 4 leads SOT172D D A Q c D1 H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 H Q mm 3.71 2.89
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OT172D
sot172d
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Untitled
Abstract: No abstract text available
Text: SOT172D CRDB4; blister pack; standard product orientation 12NC ending 112 Rev. 1 — 18 October 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning
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OT172D
msc071
OT172D
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LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.
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OT363
SC-88)
LPC2148 i2c
BGB210S
lpc2148 interfacing 2.8" TFT LCD DISPLAY
BGB210
embedded c code to interface lpc2148 with sensor
BGW200
TDA8932T
tda8920bj
NXP PN531
TDA8947J equivalent
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BLV91
Abstract: ferroxcube 1988 mda406 MDA401
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in
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BLV91/SL
OT-172D)
BLV91
ferroxcube 1988
mda406
MDA401
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AgCu28
Abstract: No abstract text available
Text: CHAPTER 7 ENVIRONMENTAL INFORMATION page Introduction 7-2 Explanation of the tables 7-2 General safety remarks 7-5 Substances not used by Philips Semiconductors 7-6 Disposal and recycling 7-7 General warnings 7-7 Chemical content tables: Diodes Transistors
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SC-74
OT457
representiveSOT23
FeNi42
SnPb20
AgCu28
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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865 RF transistor
Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm
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SC19a
OT96-1
OT502A
865 RF transistor
RF Transistor reference
"RF Power Modules"
microwave transistor 03
Power Transistor
MS-012AA
SOT391A
EU2A
sot147a
1117 sot223
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0130 transistor
Abstract: 72741 71005 Integrated Circuit 72741 BLF521 transistor K 1413
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain • Easy power control ook, halfpage
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BLF521
MBB072
OT172D
0130 transistor
72741
71005
Integrated Circuit 72741
BLF521
transistor K 1413
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SOT172D
Abstract: RF POWER TRANSISTOR NPN BLV90 MDA393
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV90 UHF power transistor Product specification February 1996 Philips Semiconductors Product specification UHF power transistor BLV90 DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.
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BLV90
OT-172D)
SOT172D
RF POWER TRANSISTOR NPN
BLV90
MDA393
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MRF140
Abstract: mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546
Text: Version 1.0 Date: 2002-08-01 PHILIPS VDMOS Cross-Reference List UHF Philips Type VDMOS BLF548 Motorola Type TMOS MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 BLF542 MRF160 BLF404 BLF521 MRF158 BLF368 MRF141G BLF278 Motorola Philips
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BLF548
MRF275G
MRF275L
MRF177
MRF176GU
MRF175LU
MRF175GU
BLF546
MRF166W
BLF544
MRF140
mrf151g 300
blf245
MRF174 "cross-reference"
motorola MRF150
04 150
MRF150
MRF157
SOT123
BLF546
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Integrated Circuit 72741
Abstract: philips resistor 2322 712 2322 141 i 72741 BLF521 philips 2322 662 91 MDA482
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D079 BLF521 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 07 2003 Sep 02 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain
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M3D079
BLF521
MBB072
OT172D
SCA75
613524/05/pp14
Integrated Circuit 72741
philips resistor 2322 712
2322 141
i 72741
BLF521
philips 2322 662 91
MDA482
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RF Power Transistors
Abstract: sot172a MM 4054 mba512 sot123 FO-83A philips rf transistors sot172 sot268
Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Transistors for UHF 1996 Feb 20 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF Package outlines 8.0 0.1 Al 2 O3 0.125 seating plane 3 BeO 5.30 max 4.0
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SC08b
MBC887
FO-45.
OT96-1
076E03S
MS-012AA
RF Power Transistors
sot172a
MM 4054
mba512
sot123
FO-83A
philips rf transistors
sot172
sot268
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philips ecg master replacement guide
Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
Text: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete
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B303D
Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Text: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.
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BLV91/SL
OT-172D)
711005b
DGb3034
BLV91/SL
B303D
TT 2222 npn
transistor tt 2222
transistor npn 2xi
transistor sot t06
FTC 960
trimmer PT 10
TT 2222
ka band transistor
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SOT-123
Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
Text: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0
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2k6847
o-205af
2n6849
2n6851
OT-268
BIF548
OT-262
IRF9Z10
O-220
SOT-123
IRF9110
PHILIPS TO220
blf544b
BLF246
BLF348
irc224
IRC350
IRC530
IRC832
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D bb53^31 □DE‘1131 b'U I IAPX BLV91/SL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.
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OCR Scan
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BLV91/SL
OT-172D)
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PDF
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SL 100 NPN Transistor base emitter collector
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D • bbSB^Bl □□ETl'lb b4ä H A P X _ Product specification Philips Semiconductors_ BLV99/SL UHF power transistor PIN CONFIGURATION FEATUR ES • Emitter-ballasting resistors for an optimum temperature profile
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BLV99/SL
OT172D
UB8012
OT172D
7Z94G85
SL 100 NPN Transistor base emitter collector
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ti 72741
Abstract: MCA81 MCB835 BLF521 URA989 MCB836 MCB831 cis-04 transistor 9567
Text: Philips Semiconductors ^53^31 DD3DDÛh STD lÂPX Product specification UHF power MOS transistor BLF521 N AMER PHILIPS/DISCRETE FEATURES b^E 3> PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch
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tbS3T31
BLF521
OT172D
OT172D
ti 72741
MCA81
MCB835
BLF521
URA989
MCB836
MCB831
cis-04
transistor 9567
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PDF
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SL 100 NPN Transistor
Abstract: transistor tt 2222 SL 100 power transistor 43120203664 International Power Sources ferroxcube wideband hf choke Philips 119
Text: P H IL IP S bSE I N T ^ ’-i D O 711002b 00b2fab4 A bCH H P H I N BLT90/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically fo r class-B operation.
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711002b
00b2fab4
BLT90/SL
OT-172D)
00b2b70
SL 100 NPN Transistor
transistor tt 2222
SL 100 power transistor
43120203664
International Power Sources
ferroxcube wideband hf choke
Philips 119
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE hTE bbS3T31 □DE'inb b4fl D Product specification Philips S em iconductors_ BLV99/SL UHF power transistor PIN CONFIGURATION FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
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OCR Scan
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bbS3T31
BLV99/SL
OT172D
PINNING-SOT172D
7Z94684
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122d
Abstract: BLU98 ON4612 sot37 172d BLV100
Text: 62 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 MHz Package Outline Type No. Load Power W @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 0.075 0.075 0.16 0.16 0.4 0.75 0.8 1.2 1 1.5 1.5 3 0.75 1.5 3 6 7.5 9.5 7 9 6.8 5.3 6 6 7
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BFR90A
BFG90A
BFR91A
BFG91A
BLU98
BLV90
BLT80
BLT81
BLV90/SL
BLV91/SL
122d
ON4612
sot37
172d
BLV100
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PDF
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ac 0624 transistor 17-33
Abstract: No abstract text available
Text: Philips Semiconductors • b b 5 3 T 31 D D 3QDfib STD H A PX Product specification UHF power MOS transistor BLF521 N AUER PHILIPS/DISCRETE FEATURES b^E 3> ■ PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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OCR Scan
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BLF521
MBB072-!
OT172D
CA766
ac 0624 transistor 17-33
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 0D2B774 565 « A P X BLT91/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.
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bbS3T31
0D2B774
BLT91/SL
OT-172D)
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