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    80N06 Search Results

    80N06 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    NP80N06MLG-S18-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP80N06NLG-S18-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP80N06PLG-E1B-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    80N06 Price and Stock

    Diotec Semiconductor AG DI080N06PQ-AQ

    MOSFET POWERQFN 5X6 N 65V 105A 0
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    DigiKey DI080N06PQ-AQ Digi-Reel 4,820 1
    • 1 $2.83
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    DI080N06PQ-AQ Cut Tape 4,820 1
    • 1 $2.83
    • 10 $1.828
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    • 1000 $0.9375
    • 10000 $0.87174
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    Newark DI080N06PQ-AQ Cut Tape 5,000 1
    • 1 $1.3
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    Master Electronics DI080N06PQ-AQ 3,750
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    • 100 $2.167
    • 1000 $2.102
    • 10000 $0.756
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    Micro Commercial Components MCU80N06A-TP

    MOSFET N-CH 60V 80A DPAK
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    DigiKey MCU80N06A-TP Cut Tape 4,362 1
    • 1 $1.37
    • 10 $0.866
    • 100 $1.37
    • 1000 $0.40772
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    MCU80N06A-TP Digi-Reel 4,362 1
    • 1 $1.37
    • 10 $0.866
    • 100 $1.37
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    MCU80N06A-TP Reel 2,500 2,500
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    New Advantage Corporation MCU80N06A-TP 10,000 1
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    Goford Semiconductor G180N06S2

    MOSFET 2N-CH 60V 8A 8SOP
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    DigiKey G180N06S2 Digi-Reel 3,990 1
    • 1 $1.21
    • 10 $0.761
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    • 1000 $0.35332
    • 10000 $0.32304
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    G180N06S2 Cut Tape 3,990 1
    • 1 $1.21
    • 10 $0.761
    • 100 $1.21
    • 1000 $0.35332
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    Infineon Technologies AG IPB80N06S209ATMA2

    MOSFET N-CH 55V 80A TO263-3
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    DigiKey IPB80N06S209ATMA2 Cut Tape 777 1
    • 1 $3.12
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    IPB80N06S209ATMA2 Digi-Reel 777 1
    • 1 $3.12
    • 10 $2.031
    • 100 $3.12
    • 1000 $1.14384
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    Avnet Americas IPB80N06S209ATMA2 Reel 12 Weeks 1,000
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    Mouser Electronics IPB80N06S209ATMA2 921
    • 1 $2.39
    • 10 $1.77
    • 100 $1.28
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    Rochester Electronics IPB80N06S209ATMA2 977 1
    • 1 $1.12
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    • 100 $1.05
    • 1000 $0.952
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    EBV Elektronik IPB80N06S209ATMA2 13 Weeks 1,000
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    Micro Commercial Components MCB80N06YHE3-TP

    POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCB80N06YHE3-TP Digi-Reel 775 1
    • 1 $2.57
    • 10 $1.619
    • 100 $1.0878
    • 1000 $0.9494
    • 10000 $0.9494
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    MCB80N06YHE3-TP Cut Tape 775 1
    • 1 $2.57
    • 10 $1.619
    • 100 $1.0878
    • 1000 $0.9494
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    80N06 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


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    O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    80n06

    Abstract: 80N06-10 STW80N06-10
    Text: 80N06-10  N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STW 80N06-10 60 V < 0.010 Ω 80 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    STW80N06-10 80N06-10 100oC 175oC O-247 80n06 80N06-10 STW80N06-10 PDF

    80n06

    Abstract: No abstract text available
    Text: IXFH 80N06 IXFT 80N06 HiPerFETTM Power MOSFETs VDSS ID25 = 60 V = 80 A = 6.5 mW RDS on trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 60 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


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    80N06 80N06 200ns O-247 O-268 O-268AA PDF

    80N06

    Abstract: No abstract text available
    Text: IXFH 80N06 IXFT 80N06 HiPerFETTM Power MOSFETs VDSS ID25 = 60 V = 80 A = 6.5 mW RDS on trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 60 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


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    80N06 80N06 200ns O-247 O-268 Sourc100 O-268AA PDF

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


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    B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter PDF

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158 PDF

    optimos battery protection reverse

    Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
    Text: 21/9/04 15.23 Página 2 Product Information 2004 INFINEON TECHNOLOGIES Automotive MOSFET Green and Robust Package I N O R D E R T O cope with the new RoHS Restricting the use of Hazardous Automotive MOSFET Substances and WEEE (Waste Electronic and Electrical Equipment) regulations the


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    FIN-02601 100P03P3L-04 P-TO220-3 P-TO262-3 P-TO252-3 P-TO263-3 O-263-7) P-TO263-7 P-TO220-7 optimos battery protection reverse 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package PDF

    TLE7201

    Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
    Text: Automotive Power Selection Guide Ultimate POWER – Perfect Control CO M P L E T E A u t o m o t i v e S o l u t i o ns f r o m I n f i n e o n www.infineon.com/power Never stop thinking. Introduction Power and Control – a Successful Combination D O Y O U N E E D to control more power? With increasing accuracy? Do


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    B112-H6731-G12-X-7600 TLE7201 BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519 PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


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    AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 PDF

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    bts 2106

    Abstract: bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 CA 5210 PL
    Text: T E M P F E T , H I T F E T ®, P R O F E T ®, T R I L I T H I C ®, O p t i M O S Ultimate POWER needs PERFECT Control Smart Power Switches and Bridges www.infineon.com Never stop thinking. Improve your System and Replace the Relays with Infineon SMART POWER SWITCHES and


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    B112-H6731-G8-X-7600 bts 2106 bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 CA 5210 PL PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


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    B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    80n06

    Abstract: NP80N06MLG-s18 MP-25ZP NP80N06MLG NP80N06MLG-S18-AY NP80N06NLG NP80N06NLG-S18-AY NP80N06PLG NP80N06PLG-E1B-AY NP80N06PLG-E2B-AY
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    M8E0904E 80n06 NP80N06MLG-s18 MP-25ZP NP80N06MLG NP80N06MLG-S18-AY NP80N06NLG NP80N06NLG-S18-AY NP80N06PLG NP80N06PLG-E1B-AY NP80N06PLG-E2B-AY PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON [MOigœilLiera *® 80N06-10 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V dss R dS oii Id STW 80N06-1 0 60 V < 0 .010 a. 80 A • . . . . . . . TYPICAL RDS(on) = 0.0085 £1 AVALANCHE RUGGED TECHNOLOGY


    OCR Scan
    STW80N06-10 80N06-1 PDF

    transistor d 1557

    Abstract: sc06140 TO-247 sc06140
    Text: SGS-THOMSON M TO »« S TW 8 0 N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA . • . . . . . . TYP E V dss RDS on Id STW 80N06-1 0 60 V < 0.010 Î2 80 A a TYPICAL R d s(oh ) = 0.0085 AVALANCHE RUGGED TECHNOLOGY


    OCR Scan
    N06-10 80N06-1 SC06140 transistor d 1557 sc06140 TO-247 sc06140 PDF

    80n06

    Abstract: 9856-2 max3049
    Text: AdvancedTechnical Information ixfh 80N06 IXFT 80N06 HiPerFET Power MOSFETs •d* = 60 V = 80 A ^DS on - VDSS m fl trr < 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions V Tj = 25° C to 150° C Tj = 25° C to 150° C; RQS= 1 Mi2


    OCR Scan
    80N06 80N06 200ns O-247 O-268 9856-2 max3049 PDF

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan
    67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10 PDF