SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
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S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
SA6954
S29WS064N
S29WS128N
S29WS256N
WS128N
FFC00
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C000H-DFFFH
Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation
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MX29LW128T/B/U/D
128M-BIT
JAN/27/2003
MAR/28/2003
MAY/16/2003
MAY/29/2003
C000H-DFFFH
24Blocks
FB0000h-FBFFFFh
9F0000h-9FFFFFh
C10000h-C1FFFFh
FF4000h-FF5FFFh
8a0000h8affffh
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S29WS256N
Abstract: S71WS512NE0BFWZZ
Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip
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S71WS512NE0BFWZZ
S71WS512
S29WS256N
54MHz
128Mb
96-ball
S71WS512NE0BFWZZ
S29WS256N
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samsung electronics ba41
Abstract: BA175
Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8C56
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
samsung electronics ba41
BA175
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MX29GL256FLT2I-90Q
Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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MX29GL256F
PM1544
MX29GL256F
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
100mA
MX29GL256FLT2I-90Q
MX29GL256FHT
MX29GL256
MX29GL256FHT2I-90Q
MX29GL256FL
MX29GL256FH
29GL256
MX29GL256FLXFI-90Q
PM1544
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06SEC
Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8F56
256Mb
070000h-07FFFFh
060000h-06FFFFh
050000h-05FFFFh
040000h-04FFFFh
030000h-03FFFFh
020000h-02FFFFh
010000h-01FFFFh
00C000h-00FFFFh
06SEC
BA213
16N10
BA167
BA184
15ET
BA244
BA242
K8F5615ETM
samsung nor flash
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SA206
Abstract: MX29GA129E
Text: MX29GA129E C/F MX29GA257E C/F MX29GA129/257E C/F DATASHEET P/N:PM1503 REV. 0.01, AUG. 10, 2009 1 ADVANCED INFORMATION MX29GA129E C/F MX29GA257E C/F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations
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MX29GA129E
MX29GA257E
MX29GA129/257E
PM1503
32-word
100mA
SA206
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MX29GL256FHT
Abstract: MX29GL256FH
Text: MX29GL256F MX29GL256F DATASHEET ADVANCED INFORMATION MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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MX29GL256F
MX29GL256F
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
100mA
MX29GL256FHT
MX29GL256FH
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MX29GL256
Abstract: MX29GL256E MX29GL128 mx29gl128eh MX29GL128EL MX29GL128elt2i-90g MX29GL256ELT2I MX29GL256ELT2I-90Q MX29GL128E MX29GL256EHT2I-90Q
Text: MX29GL256E H/L MX29GL128E H/L MX29GL256E/128E H/L DATASHEET P/N:PM1435 REV. 0.03, MAR. 06, 2009 1 PRELIMINARY MX29GL256E H/L MX29GL128E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations
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MX29GL256E
MX29GL128E
MX29GL256E/128E
PM1435
64KW/128KB
MX29GL256
MX29GL128
mx29gl128eh
MX29GL128EL
MX29GL128elt2i-90g
MX29GL256ELT2I
MX29GL256ELT2I-90Q
MX29GL256EHT2I-90Q
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Untitled
Abstract: No abstract text available
Text: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR
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K8C54
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
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BA188
Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
Text: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8S5615ETC
256Mb
44FBGA,
no180000h-018FFFFh
0170000h-017FFFFh
0160000h-016FFFFh
0150000h-015FFFFh
0140000h-014FFFFh
0130000h-013FFFFh
0120000h-012FFFFh
BA188
BA255
BA242
BA138
BA234
BA205
BA238
BA251
BA188 co
BA213
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BA251
Abstract: 16N10
Text: K8F56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8F56
256Mb
1A0000h-1AFFFFh
190000h-19FFFFh
180000h-18FFFFh
170000h-17FFFFh
160000h-16FFFFh
150000h-15FFFFh
140000h-14FFFFh
130000h-13FFFFh
BA251
16N10
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BA95
Abstract: 8A0000
Text: K8C56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR
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K8C56
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
BA95
8A0000
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MX29GL256
Abstract: MX29GL256E MX29GL256EHT2 MX29GL256EHT2I-90Q 29GL256 MX29GL256EHMC MX29GL256EHT2I MX29GL256ELXFI-90Q MX29GL256EHXFI-90Q MX29GL256EHMC-90Q
Text: MX29GL256E MX29GL256E DATASHEET P/N:PM1499 REV. 1.2, NOV. 22, 2010 1 MX29GL256E SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256E H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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MX29GL256E
MX29GL256E
PM1499
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
MX29GL256
MX29GL256EHT2
MX29GL256EHT2I-90Q
29GL256
MX29GL256EHMC
MX29GL256EHT2I
MX29GL256ELXFI-90Q
MX29GL256EHXFI-90Q
MX29GL256EHMC-90Q
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SA247
Abstract: No abstract text available
Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.00, DEC. 10, 2009 1 ADVANCED INFORMATION MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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MX29GL256F
MX29GL256F
PM1544
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
SA247
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samsung ba92
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K8F56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8F56
256Mb
co1A0000h-1AFFFFh
190000h-19FFFFh
180000h-18FFFFh
170000h-17FFFFh
160000h-16FFFFh
150000h-15FFFFh
140000h-14FFFFh
130000h-13FFFFh
samsung ba92
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BA239
Abstract: No abstract text available
Text: Rev. 1.0, Jun. 2010 K8P5616UZB 256Mb B-die Page NOR FLASH 256M Bit 16M x16, 32M x8 , Page Mode datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8P5616UZB
256Mb
54TSOP
50TYP
64FBGA
60Solder
BA239
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29gl128
Abstract: 29GL256 750000H-75FFFFH SA-136 MX29GA256 MX 128 D MX29GA SA154 Q0-Q15 sa229
Text: MX29GA256/257E H/L MX29GA128/129E H/L MX29GA - E Series DATASHEET P/N:PM1484 REV. 0.02, MAR. 06, 2009 1 PRELIMINARY MX29GA256/257E H/L MX29GA128/129E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations
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MX29GA256/257E
MX29GA128/129E
MX29GA
PM1484
64KW/128KB
29gl128
29GL256
750000H-75FFFFH
SA-136
MX29GA256
MX 128 D
SA154
Q0-Q15
sa229
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Untitled
Abstract: No abstract text available
Text: MX29GL256E MX29GL256E DATASHEET The MX29GL256E product family is not recommended for new designs, while MX29GL256F family is suggested to replace it. Please refer to MX29GL256F datasheet for specifications and ordering information, or contact your local sales representative for additional support.
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MX29GL256E
MX29GL256E
MX29GL256F
MX29GL256F
PM1499
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S73WS256N
Abstract: WS128N SA173
Text: S73WS256N based MCPs Stacked Multi-Chip Product MCP 256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Address/Data Bus ADVANCE Distinctive Characteristics
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S73WS256N
32M/16M
16-bit)
16-bit
S73WS
WS128N
SA173
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101110
Abstract: ws256n spansion S29WS064N S29WS128N S29WS256N WS128N 064N
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
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S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
84-ball
WS128N
80-ball
WS064N
101110
ws256n spansion
S29WS064N
S29WS128N
S29WS256N
WS128N
064N
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MX29GL256
Abstract: No abstract text available
Text: MX29GL256F H/L-70SSOP MX29GL256F H/L 70 SSOP DATASHEET P/N:PM1674 REV. 1.2, DEC. 13, 2011 1 MX29GL256F H/L-70SSOP SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations
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MX29GL256F
H/L-70SSOP
PM1674
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
MX29GL256
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MX29GL256E
Abstract: MX29GL256E USPB
Text: MX29GL256E H/L MX29GL256E H/L DATASHEET P/N:PM1499 REV. 1.0, APR. 28, 2009 1 MX29GL256E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - V I/O voltage must tight with VCC
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MX29GL256E
PM1499
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
100mA
MX29GL256E USPB
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mx29ga257
Abstract: MX29GA257EHXCI-90Q MX29GA SEC555 MX29GA128E SA135 MX29GA129E MX29GA256ELXCI-90Q mx29ga257ehxci addr55
Text: MX29GA256/257E H/L MX29GA128/129E H/L MX29GA - E Series DATASHEET P/N:PM1484 REV. 1.0, AUG. 05, 2011 1 MX29GA256/257E H/L MX29GA128/129E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations
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MX29GA256/257E
MX29GA128/129E
MX29GA
PM1484
MX29GA256E
x8/x16;
MX29GA257E
MX29GA128E
mx29ga257
MX29GA257EHXCI-90Q
SEC555
SA135
MX29GA129E
MX29GA256ELXCI-90Q
mx29ga257ehxci
addr55
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