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    SEP8703

    Abstract: honeywell 940 Quantum Effect Devices A360 SE3470 SE5470 SEC555 SEP8790 teradyne A360
    Text: Reliability Summary of SEC555 AlGaAs:Si IRED Chip Long-Term Operating Life Study INTRODUCTION Honeywell is committed to the manufacture of reliable, high quality optoelectronic products. An ISO9001 based quality system is maintained, providing the necessary


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    PDF SEC555 ISO9001 SE3470, SEP8703 honeywell 940 Quantum Effect Devices A360 SE3470 SE5470 SEP8790 teradyne A360

    Untitled

    Abstract: No abstract text available
    Text: MX29GL512F MX29GL512F DATASHEET P/N:PM1617 REV. 1.6, OCT. 30, 2013 1 MX29GL512F Contents FEATURES. 5


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    PDF MX29GL512F PM1617

    MX29GL512

    Abstract: MX29GL512E 00FF0001 29GL512 Q0-Q15 PM1524 mx29gl512e 70 MX29GL512EHMC-10Q MX29GL512EHT2I-10Q MX29GL512ELT2I-10Q
    Text: MX29GL512E H/L MX29GL512E H/L DATASHEET P/N:PM1524 REV. 1.1, NOV. 22, 2010 1 MX29GL512E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 2.7 to 3.6 volt for read, erase, and program operations • Byte/Word mode switchable - 67,108,864 x 8 / 33,554,432 x 16


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    PDF MX29GL512E PM1524 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word MX29GL512 00FF0001 29GL512 Q0-Q15 PM1524 mx29gl512e 70 MX29GL512EHMC-10Q MX29GL512EHT2I-10Q MX29GL512ELT2I-10Q

    MX29GL256FLT2I-90Q

    Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
    Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


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    PDF MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544

    MX29GL512FHMI-11G

    Abstract: MX29GL512FHMI-10Q
    Text: MX29GL512F H/L-70SSOP MX29GL512F H/L 70 SSOP DATASHEET P/N:PM1673 REV. 1.2, JAN. 06, 2012 1 MX29GL512F H/L-70SSOP SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 2.7 to 3.6 volt for read, erase, and program operations • Byte/Word mode switchable


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    PDF MX29GL512F H/L-70SSOP PM1673 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word MX29GL512FHMI-11G MX29GL512FHMI-10Q

    Untitled

    Abstract: No abstract text available
    Text: MX29LA640E H/L 64M-BIT [4M x 16/8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8M Bytes/4M Words switchable • 128 Equal Sectors with 64K Bytes 32K words each - Any combination of sectors can be erased with erase suspend/resume function


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    PDF MX29LA640E 64M-BIT 16/8M 100mA 11us/word 45s/chip

    MX29GL256F

    Abstract: MX29GL256FHT2I-90Q MX29GL256FLT2I-90Q TSOP 62 Package MX29GL256FLT2i
    Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 1.3, JAN. 12, 2012 1 MX29GL256F Contents FEATURES. 5


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    PDF MX29GL256F MX29GL256F PM1544 MX29GL256FHT2I-90Q MX29GL256FLT2I-90Q TSOP 62 Package MX29GL256FLT2i

    MX29GL256FHT

    Abstract: MX29GL256FH
    Text: MX29GL256F MX29GL256F DATASHEET ADVANCED INFORMATION MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


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    PDF MX29GL256F MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FHT MX29GL256FH

    MX29GA257F

    Abstract: MX29GA256F JESD47E Q0-Q15 MX29GA MX29GA256FL MXIC MX MX29GA257 MX29GA256F/MX29GA257F
    Text: MX29GA256F H/L MX29GA257F H/L MX29GA256F/MX29GA257F DATASHEET P/N:PM1649 REV. 1.0, AUG. 08, 2011 1 MX29GA256F H/L MX29GA257F H/L Contents FEATURES. 5


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    PDF MX29GA256F MX29GA257F MX29GA256F/MX29GA257F PM1649 JESD47E Q0-Q15 MX29GA MX29GA256FL MXIC MX MX29GA257 MX29GA256F/MX29GA257F

    Untitled

    Abstract: No abstract text available
    Text: MX29GL512E H/L MX29GL512E H/L DATASHEET The MX29GL512E product family is not recommended for new designs. The MX29GL512F family is the recommended replacement. Please refer to MX29GL512F datasheet for full specifications and ordering information, or contact your local sales representative for


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    PDF MX29GL512E MX29GL512F MX29GL512F PM1524

    Untitled

    Abstract: No abstract text available
    Text: MX29GL128F MX29GL128F DATASHEET P/N:PM1683 REV. 1.4, OCT. 30, 2013 1 MX29GL128F Contents FEATURES. 5


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    PDF MX29GL128F PM1683

    Untitled

    Abstract: No abstract text available
    Text: MX68GL1G0F MX68GL1G0F DATASHEET P/N:PM1727 REV. 1.3, OCT. 30, 2013 1 MX68GL1G0F Contents 1. FEATURES. 5


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    PDF MX68GL1G0F PM1727

    MX29GL256

    Abstract: MX29GL256E MX29GL128 mx29gl128eh MX29GL128EL MX29GL128elt2i-90g MX29GL256ELT2I MX29GL256ELT2I-90Q MX29GL128E MX29GL256EHT2I-90Q
    Text: MX29GL256E H/L MX29GL128E H/L MX29GL256E/128E H/L DATASHEET P/N:PM1435 REV. 0.03, MAR. 06, 2009 1 PRELIMINARY MX29GL256E H/L MX29GL128E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations


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    PDF MX29GL256E MX29GL128E MX29GL256E/128E PM1435 64KW/128KB MX29GL256 MX29GL128 mx29gl128eh MX29GL128EL MX29GL128elt2i-90g MX29GL256ELT2I MX29GL256ELT2I-90Q MX29GL256EHT2I-90Q

    MX29GL256

    Abstract: MX29GL256E MX29GL256EHT2 MX29GL256EHT2I-90Q 29GL256 MX29GL256EHMC MX29GL256EHT2I MX29GL256ELXFI-90Q MX29GL256EHXFI-90Q MX29GL256EHMC-90Q
    Text: MX29GL256E MX29GL256E DATASHEET P/N:PM1499 REV. 1.2, NOV. 22, 2010 1 MX29GL256E SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256E H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


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    PDF MX29GL256E MX29GL256E PM1499 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word MX29GL256 MX29GL256EHT2 MX29GL256EHT2I-90Q 29GL256 MX29GL256EHMC MX29GL256EHT2I MX29GL256ELXFI-90Q MX29GL256EHXFI-90Q MX29GL256EHMC-90Q

    Untitled

    Abstract: No abstract text available
    Text: MX29GL640E T/B MX29GL640E H/L MX29GL640E T/B, MX29GL640E H/L DATASHEET P/N:PM1494 REV. 0.01, JUN. 30, 2009 1 PRELIMINARY MX29GL640E T/B MX29GL640E H/L FEATURES SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations


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    PDF MX29GL640E PM1494 32Kword

    MX29GL512

    Abstract: MX29GL512FHT MX29GL512FUXFI-12G MX29GL512FHXFI-11 MX29GL512FLT2 Q8-Q14
    Text: MX29GL512F MX29GL512F DATASHEET P/N:PM1617 REV. 1.4, JUL. 31, 2012 1 MX29GL512F Contents FEATURES. 5


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    PDF MX29GL512F MX29GL512F PM1617 MX29GL512 MX29GL512FHT MX29GL512FUXFI-12G MX29GL512FHXFI-11 MX29GL512FLT2 Q8-Q14

    Untitled

    Abstract: No abstract text available
    Text: MX29GL128E MX29GL128E DATASHEET P/N:PM1500 REV. 1.3, MAR. 08, 2011 1 MX29GL128E SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL128E H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


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    PDF MX29GL128E MX29GL128E PM1500 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word

    SA247

    Abstract: No abstract text available
    Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.00, DEC. 10, 2009 1 ADVANCED INFORMATION MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


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    PDF MX29GL256F MX29GL256F PM1544 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word SA247

    MX29GL128E

    Abstract: MX29GL128E USPB MX29GL128eh
    Text: MX29GL128E H/L MX29GL128E H/L DATASHEET P/N:PM1500 REV. 1.0, APR. 28, 2009 1 MX29GL128E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - V I/O voltage must tight with VCC


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    PDF MX29GL128E PM1500 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL128E USPB MX29GL128eh

    MX29GL640E

    Abstract: MX29GL640E USPB
    Text: MX29GL640E T/B MX29GL640E H/L MX29GL640E T/B, MX29GL640E H/L DATASHEET P/N:PM1494 REV. 0.00, MAR. 24, 2009 1 ADVANCED INFORMATION MX29GL640E T/B MX29GL640E H/L FEATURES SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations


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    PDF MX29GL640E PM1494 32Kword MX29GL640E USPB

    MX29GL256FHT2I-90Q

    Abstract: MX29GL256F MX29GL256FLT2I-90Q 29GL256F MX29GL256FUXFI-11G PM1544 MX29GL256FLXFI-90Q MX29GL256FHT
    Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 1.2, OCT. 28, 2011 1 MX29GL256F Contents FEATURES. 5


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    PDF MX29GL256F MX29GL256F PM1544 MX29GL256FHT2I-90Q MX29GL256FLT2I-90Q 29GL256F MX29GL256FUXFI-11G PM1544 MX29GL256FLXFI-90Q MX29GL256FHT

    A910

    Abstract: mx68gl1g0 MX68GL1G0FHMI-11G
    Text: MX68GL1G0F H/L-70SSOP MX68GL1G0F H/L 70SSOP DATASHEET P/N:PM1750 REV. 0.00, AUG. 23, 2011 1 MX68GL1G0F H/L-70SSOP Contents 1. FEATURES. 6


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    PDF MX68GL1G0F H/L-70SSOP 70SSOP) PM1750 A910 mx68gl1g0 MX68GL1G0FHMI-11G

    MX29GL640E

    Abstract: mx29gl640eb MX29GL640E USPB MX29GL640EBXEI-70G mx29gl640
    Text: MX29GL640E T/B MX29GL640E H/L MX29GL640E T/B, MX29GL640E H/L DATASHEET P/N:PM1494 REV. 1.4, DEC. 27, 2011 1 MX29GL640E T/B MX29GL640E H/L Contents FEATURES. 5


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    PDF MX29GL640E PM1494 mx29gl640eb MX29GL640E USPB MX29GL640EBXEI-70G mx29gl640

    Untitled

    Abstract: No abstract text available
    Text: Reliability Summary of SEC555 AIGaAsrSi IRED Chip Long-Term Operating Life Study IRED CHIP DEGRADATION STUDIES MECHANICAL RELIABILITY Honeywell has an ongoing study ot degradation of radiant output over time as a function of temperature and current for the SEC555 aluminum gallium arsenide


    OCR Scan
    PDF SEC555 SE3470,