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    8GB 64 GBIT NAND FLASH Search Results

    8GB 64 GBIT NAND FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy

    8GB 64 GBIT NAND FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NAND512W3A 64MB

    Abstract: STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B
    Text: NAND Flash memories The core element of a compact audio-player is a NAND Flash, smaller than a stamp, which is capable of storing hours of audio files Because NAND Flash offers higher densities and performances at lower cost, it is ideal for multimedia system


    Original     		PDF FLNANDF0106 NAND512W3A 64MB STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B

    NAND512B

    Abstract: SD 1083 0.65mm pitch BGA NAND08G-B NAND04G-B FBGA63 SE 4.000 mhz 30pf TRANSISTOR z67 VFBGA63 NAND01G-B
    Text: NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES


    Original     		PDF NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B Byte/1056 64Mbit NAND512B SD 1083 0.65mm pitch BGA NAND08G-B FBGA63 SE 4.000 mhz 30pf TRANSISTOR z67 VFBGA63

    block code error management, verilog

    Abstract: flash chip 8gb NAND08GW NAND01G-B NAND01GR3B NAND01GW3B NAND02G-B NAND04G-B NAND08G-B VFBGA63
    Text: NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array


    Original     		PDF NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B Byte/1056 64Mbit block code error management, verilog flash chip 8gb NAND08GW NAND01G-B NAND01GR3B NAND01GW3B NAND02G-B NAND04G-B NAND08G-B VFBGA63

    USOP48

    Abstract: VFBGA63 FBGA63 NAND08GW4B
    Text: NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES


    Original     		PDF NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B Byte/1056 64Mbit USOP48 VFBGA63 FBGA63 NAND08GW4B

    qualcomm

    Abstract: block diagram of qualcomm MD2433-D8G-V3Q18-X-P X-GOLD 110 arm microprocessor data sheet PCI game port 512MB NOR FLASH Infineon X-GOLD 110 OMAP 4470 datasheet infineon x-gold
    Text: mDOC H1 4Gb 512MByte and 8Gb (1GByte) High Capacity Flash Disk with NAND and x2 Technology Data Sheet, Rev. 1.1 Highlights „ mDOC H1 is one of the industry’s most efficient memory solutions for high capacity data and code storage, using 90 nm process


    Original     		PDF 512MByte) 95-DT-1104-01 qualcomm block diagram of qualcomm MD2433-D8G-V3Q18-X-P X-GOLD 110 arm microprocessor data sheet PCI game port 512MB NOR FLASH Infineon X-GOLD 110 OMAP 4470 datasheet infineon x-gold

    H27U4G8

    Abstract: No abstract text available
    Text: APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27 U_S 4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash 4Gb NAND FLASH H27U4G8_6F2D H27S4G8_6F2D Rev 1.4 / OCT. 2010 *ba53f20d-240c* 1 B34416/177.179.157.84/2010-10-08 10:08 APCPCWM_4828539:WP_0000001WP_000000


    Original     		PDF 0000001WP H27U4G8 H27S4G8 ba53f20d-240c* B34416/177

    Wear Leveling in Single Level Cell NAND Flash Memory

    Abstract: 4GIT NAND08Gx3C2A NAND04GW3C2A AI07563B bad block management in mlc
    Text: NAND04Gx3C2A NAND08Gx3C2A 4 Gbit, 8 Gbit 2112 Byte Page, 3V, Multi-level NAND Flash Memory Preliminary Data Features summary • High density multi-level Cell MLC NAND Flash memories: – Up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solutions for mass storage


    Original     		PDF NAND04Gx3C2A NAND08Gx3C2A Wear Leveling in Single Level Cell NAND Flash Memory 4GIT NAND08Gx3C2A NAND04GW3C2A AI07563B bad block management in mlc

    JS29F08G08

    Abstract: 29f04g08 JS29F 29F08G08 intel nand flash SS72 intel 29F intel nand flash memory INTEL FLASH MEMORY 29F intel nand
    Text: Intel SS72 NAND Flash Memory JS29F02G08AANB3, JS29F04G08BANB3, JS29F08G08FANB3 Product Features Organization: Basic NAND flash command set: Read performance: New commands: — — — Page size: x8: 2,112 bytes 2,048 + 64 bytes ; x16: 1,056 words (1,024 + 32 words)


    Original     		PDF JS29F02G08AANB3, JS29F04G08BANB3, JS29F08G08FANB3 1000pc JS29F04G08BANB3 29F04G08BANB3 JS29F08G08 29f04g08 JS29F 29F08G08 intel nand flash SS72 intel 29F intel nand flash memory INTEL FLASH MEMORY 29F intel nand

    block code error management, verilog

    Abstract: NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■


    Original     		PDF NAND04GW3B2B NAND08GW3B2A Byte/1056 block code error management, verilog NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B

    NUMONYX

    Abstract: JESD97 NAND04GW3B2B NAND08GW3B2A
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■


    Original     		PDF NAND04GW3B2B NAND08GW3B2A Byte/1056 NUMONYX JESD97 NAND04GW3B2B NAND08GW3B2A

    JESD97

    Abstract: NAND04GW3B2B NAND08GW3B2A NAND04
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories PRELIMINARY DATA Feature summary • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage


    Original     		PDF NAND04GW3B2B NAND08GW3B2A Byte/1056 JESD97 NAND04GW3B2B NAND08GW3B2A NAND04

    LGA52

    Abstract: LGA-52 16gb 8Gb 64 gbit nand flash NAND16GW3C4A TSOP48 outline 16G nand 16G nand flash NS4258 IBIS Models
    Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Preliminary Data Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3C2A NAND16GW3C4A LGA52 LGA-52 16gb 8Gb 64 gbit nand flash NAND16GW3C4A TSOP48 outline 16G nand 16G nand flash NS4258 IBIS Models

    F59L1G81A

    Abstract: No abstract text available
    Text: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes


    Original     		PDF F59L1G81A 200us F59L1G81A

    NAND Flash

    Abstract: F59L1G81A
    Text: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes


    Original     		PDF F59L1G81A 200us it/528 NAND Flash F59L1G81A

    Untitled

    Abstract: No abstract text available
    Text: ESM T F59L1G81A Operation Temperature Condition -40 C~85 C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59L1G81A 200us

    1G NAND flash

    Abstract: F59L1G81A F59L
    Text: ESMT F59L1G81A Operation Temperature Condition -40°C~85°C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit


    Original     		PDF F59L1G81A 200us 1G NAND flash F59L1G81A F59L

    Untitled

    Abstract: No abstract text available
    Text: ESMT F59L1G81MA 2Y Flash 1 Gbit (128M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte


    Original     		PDF F59L1G81MA 300us 4bit/512Byte,

    F59D1G81A

    Abstract: 1G NAND flash Elite Semiconductor Memory Technology nand
    Text: ESMT F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES z z z z z z z Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte


    Original     		PDF F59D1G81A 1bit/528Byte F59D1G81A 1G NAND flash Elite Semiconductor Memory Technology nand

    Untitled

    Abstract: No abstract text available
    Text: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59D2G81A 250us

    F59L2G81A

    Abstract: F59L2G81A, F59L2G81 two-plane program nand bsc 60h
    Text: ESMT Preliminary F59L2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59L2G81A 4bit/512Byte F59L2G81A F59L2G81A, F59L2G81 two-plane program nand bsc 60h

    NAND Flash

    Abstract: No abstract text available
    Text: ESMT F59D2G81A / F59D2G161A Flash 2 Gbit 256M x 8 / 128M x 16 1.8V NAND Flash Memory FEATURES       Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit


    Original     		PDF F59D2G81A F59D2G161A 16bit NAND Flash

    Untitled

    Abstract: No abstract text available
    Text: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59L2G81A 250us

    Untitled

    Abstract: No abstract text available
    Text: ESMT F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit 256M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59D2G81A 250us

    NAND Flash

    Abstract: F59L2G81A
    Text: ESMT F59L2G81A Flash 2 Gbit 256M x 8 3.3V NAND Flash Memory FEATURES         Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte


    Original     		PDF F59L2G81A 350us NAND Flash F59L2G81A