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    8KX8 EPROM Search Results

    8KX8 EPROM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD27C64-25 Rochester Electronics LLC UVPROM, 8KX8, 250ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-20 Rochester Electronics LLC UVPROM, 8KX8, 200ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-35 Rochester Electronics LLC UVPROM, 8KX8, 350ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    AM27C256-55DM/B Rochester Electronics AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics Buy
    AM27C010-55PI-G Rochester Electronics AM27C010 - EPROM - OTP, EPROM - UV 1Mbit 128k x 8 Visit Rochester Electronics Buy

    8KX8 EPROM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IS61SP25636

    Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
    Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B


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    32Kx8 32Kx16 128Kx8 64Kx16 128Kx16 IS61C64B IS61C256AH IS61C3216 IS61C3216B IS61SP25636 s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64 PDF

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


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    bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N PDF

    bq4010

    Abstract: bq4010MA bq4010Y bq4010YMA
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


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    bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010MA bq4010Y bq4010YMA PDF

    C2665

    Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
    Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)


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    CY7C266 CY7C266 600-mil-wide C2665 C2668 7c26 C2662 C266 27C64 R1250 C2666 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


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    bq4010/bq4010Y 28-pin 10-year bq4010 536-bit PDF

    bq4010

    Abstract: bq4010Y
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


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    bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y PDF

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


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    bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM


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    CY7C266 27C64 600-mil-wide CY7C266 PDF

    Untitled

    Abstract: No abstract text available
    Text: static CMOS _ Family of ROMs March 1992 III AMI LOW DENSITY FAMILY OF ROMS Table 1: S6316 S6333/S63332 S63364 S6364 S63128 Process CMOS CMOS CMOS CMOS CMOS Capacity 16K 32K 64K 64K 128K Organization 2Kx 8 4Kx8 8Kx8 8Kx8 16Kx8 Compatible EPROM


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    S6316 S6333/S63332 S63364 S6364 S63128 16Kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: RJ1 Prelim inary U N I T R O O E 8Kx8 ZEROPOWER NVSRAM Features General Description > Integrated ultra low-power SRAM, power-fail control circuit, and battery The bq4310Y ZEROPOWER NVSRAM is a 8Kx8 nonvolatile static RAM. The monolithic chip is available in the SNAPHAT package


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    bq431OY bq4310Y 28-pin, 330-mil 4833YPD bg4310YSH- bq48SH PDF

    2732 cmos eprom

    Abstract: No abstract text available
    Text: A M II.W — Static CMOS Family of ROMs _ March 1992 Table 4 continued : AMI LOW VOLTAGE FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63364L S6333L/32 S6316L CMOS CMOS CMOS CMOS 64K 64K 32K 16K Organization 8Kx8 8Kx8


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    S6364L S63364L S6333L/32 S6316L 250n8, 2732 cmos eprom PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


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    bq4010/bq4010Y bq4010 536-bit 28-pin bq4010YMA-85N -150N. bq4010 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


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    4010/b bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,636-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


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    bq4010/bq4010Y bq4010 636-bit 28-pin 10-year o010-70 bq4010Y-70 bq4010YMA-70N bq4010 PDF

    bq4010Y-xxxN

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


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    bq4010/bq4010Y bq4010 536-bit bq4010YMA-85N -150N. bq4010-70 bq4010Y-70 bq4010YMA-70N bq4010Y-xxxN PDF

    23C64-A

    Abstract: A2ZA 2564 eprom A921A za4t 23C64
    Text: SILICON INTEGRATED ETE D • fl553aa,i QQ000Q5 3 ■ CMOS M A S K R O M SIS 23C64/SIS 23C64A 8Kx8 CMOS MASK ROM FEATURE PIN ASSIGNMENT •Access time 150/200ns •Single + 5V power supply •Pin Compatible with 2564 EPROM •TT L Compatible inputs and outputs


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    fl553aa, QQ000Q5 23C64/SIS 23C64A 150/200ns 23C64A 23C64 23C66 23C66A23 23C66/A-20 23C64-A A2ZA 2564 eprom A921A za4t PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically


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    CY7C266 27C64 CY7C266 600-mil-wide PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


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    bq4010/bq4010Y bq4010 536-bit bq4010YMA-85N -150N. bq4010 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


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    bq4010/bq4010Y bq4010 536-bit lithi50N. bq4010-70 bq4010Y-70 bq4010YMA-70N bq4010 bq401 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq401 Q/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


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    bq401 Q/bq4010Y bq4011 144-bit 28-pin 10-year PDF

    Untitled

    Abstract: No abstract text available
    Text: bq 4010/bq 401 OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


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    4010/bq bq4010 536-bit 137001e bq4010/bq4010Y bq4010 PDF

    Untitled

    Abstract: No abstract text available
    Text: Prelim inary bq4823Y TIMEKEEPER Module with 8Kx8 NVSRAM General Description Features ► Integrated u ltra low-power SRAM, real-time clock, power-fail control circuit, and battery >• Real-time clock counts seconds through years in BCD format ► Frequency te st output for real­


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    bq4823Y TD4833YPDUM bq48SHX12 bq48SHX12TR PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged


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    CY7C266 CY7C266 600-mil-wide PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


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    bq4010/bq401 bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns PDF