IS61SP25636
Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B
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Original
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32Kx8
32Kx16
128Kx8
64Kx16
128Kx16
IS61C64B
IS61C256AH
IS61C3216
IS61C3216B
IS61SP25636
s62lv256
256x16 sram
89C64
IS41LV16105
soj44
non-volatile SRAM 4KX8
issi 32kx16
IS80C31
64KX64
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PDF
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bq4010
Abstract: bq4010Y bq4010YMA-85N
Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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Original
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bq4010/bq4010Y
bq4010
536-bit
28-pin
10-year
bq4010Y
bq4010YMA-85N
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PDF
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bq4010
Abstract: bq4010MA bq4010Y bq4010YMA
Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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Original
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bq4010/bq4010Y
bq4010
536-bit
28-pin
10-year
bq4010MA
bq4010Y
bq4010YMA
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PDF
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C2665
Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)
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Original
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CY7C266
CY7C266
600-mil-wide
C2665
C2668
7c26
C2662
C266
27C64
R1250
C2666
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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Original
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bq4010/bq4010Y
28-pin
10-year
bq4010
536-bit
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PDF
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bq4010
Abstract: bq4010Y
Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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Original
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bq4010/bq4010Y
bq4010
536-bit
28-pin
10-year
bq4010Y
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PDF
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bq4010
Abstract: bq4010Y bq4010YMA-85N
Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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Original
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bq4010/bq4010Y
bq4010
536-bit
28-pin
10-year
bq4010Y
bq4010YMA-85N
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM
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Original
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CY7C266
27C64
600-mil-wide
CY7C266
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PDF
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Untitled
Abstract: No abstract text available
Text: static CMOS _ Family of ROMs March 1992 III AMI LOW DENSITY FAMILY OF ROMS Table 1: S6316 S6333/S63332 S63364 S6364 S63128 Process CMOS CMOS CMOS CMOS CMOS Capacity 16K 32K 64K 64K 128K Organization 2Kx 8 4Kx8 8Kx8 8Kx8 16Kx8 Compatible EPROM
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OCR Scan
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S6316
S6333/S63332
S63364
S6364
S63128
16Kx8
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PDF
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Untitled
Abstract: No abstract text available
Text: RJ1 Prelim inary U N I T R O O E 8Kx8 ZEROPOWER NVSRAM Features General Description > Integrated ultra low-power SRAM, power-fail control circuit, and battery The bq4310Y ZEROPOWER NVSRAM is a 8Kx8 nonvolatile static RAM. The monolithic chip is available in the SNAPHAT package
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OCR Scan
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bq431OY
bq4310Y
28-pin,
330-mil
4833YPD
bg4310YSH-
bq48SH
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PDF
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2732 cmos eprom
Abstract: No abstract text available
Text: A M II.W — Static CMOS Family of ROMs _ March 1992 Table 4 continued : AMI LOW VOLTAGE FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63364L S6333L/32 S6316L CMOS CMOS CMOS CMOS 64K 64K 32K 16K Organization 8Kx8 8Kx8
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OCR Scan
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S6364L
S63364L
S6333L/32
S6316L
250n8,
2732 cmos eprom
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4010/bq4010Y
bq4010
536-bit
28-pin
bq4010YMA-85N
-150N.
bq4010
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq401OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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4010/b
bq4010
536-bit
bq4010YMA-70N
bq4010-70
bq4010/bq4010Y
bq401Q
150ns
200ns
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,636-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4010/bq4010Y
bq4010
636-bit
28-pin
10-year
o010-70
bq4010Y-70
bq4010YMA-70N
bq4010
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PDF
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bq4010Y-xxxN
Abstract: No abstract text available
Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4010/bq4010Y
bq4010
536-bit
bq4010YMA-85N
-150N.
bq4010-70
bq4010Y-70
bq4010YMA-70N
bq4010Y-xxxN
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PDF
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23C64-A
Abstract: A2ZA 2564 eprom A921A za4t 23C64
Text: SILICON INTEGRATED ETE D • fl553aa,i QQ000Q5 3 ■ CMOS M A S K R O M SIS 23C64/SIS 23C64A 8Kx8 CMOS MASK ROM FEATURE PIN ASSIGNMENT •Access time 150/200ns •Single + 5V power supply •Pin Compatible with 2564 EPROM •TT L Compatible inputs and outputs
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OCR Scan
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fl553aa,
QQ000Q5
23C64/SIS
23C64A
150/200ns
23C64A
23C64
23C66
23C66A23
23C66/A-20
23C64-A
A2ZA
2564 eprom
A921A
za4t
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically
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OCR Scan
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CY7C266
27C64
CY7C266
600-mil-wide
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4010/bq4010Y
bq4010
536-bit
bq4010YMA-85N
-150N.
bq4010
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4010/bq4010Y
bq4010
536-bit
lithi50N.
bq4010-70
bq4010Y-70
bq4010YMA-70N
bq4010
bq401
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PDF
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Untitled
Abstract: No abstract text available
Text: bq401 Q/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq401
Q/bq4010Y
bq4011
144-bit
28-pin
10-year
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PDF
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Untitled
Abstract: No abstract text available
Text: bq 4010/bq 401 OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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4010/bq
bq4010
536-bit
137001e
bq4010/bq4010Y
bq4010
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PDF
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Untitled
Abstract: No abstract text available
Text: Prelim inary bq4823Y TIMEKEEPER Module with 8Kx8 NVSRAM General Description Features ► Integrated u ltra low-power SRAM, real-time clock, power-fail control circuit, and battery >• Real-time clock counts seconds through years in BCD format ► Frequency te st output for real
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OCR Scan
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bq4823Y
TD4833YPDUM
bq48SHX12
bq48SHX12TR
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged
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OCR Scan
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CY7C266
CY7C266
600-mil-wide
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4010/bq401
bq4010
536-bit
bq4010YMA-70N
bq4010-70
bq4010/bq4010Y
bq401Q
150ns
200ns
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PDF
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