Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8M322SSM4/LSM4 FAST PAGE MODE 8MX32 DRAM SIMM, 2K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED8M322SSM4/LSM4 is an 8M bit x 32 Dynamic RAM high density memory module. The AVED Memory Products AVED8M322SSM4/LSM4
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AVED8M322SSM4/LSM4
8MX32
AVED8M322SSM4/LSM4
24-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: FMD4B32LBx–37Ex 256M 8Mx32 Low Power DDR SDRAM Revision 1.0 Jan. 2009 Rev. 1.0, Jan. ‘09 1 FMD4B32LBx–37Ex Document Title 256M(8Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Jan. 17th, 2008
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FMD4B32LBxâ
8Mx32)
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IS43R32800
Abstract: 43R32800
Text: IS43R32800 8Mx32 256Mb DDR Synchronous DRAM FEATURES • Vdd/Vddq=2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK)
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IS43R32800
8Mx32
256Mb
IS43R32800
144-Ball)
43R32800
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PDF
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is46dr32801a-5bbla1
Abstract: 126-ball IS46DR32801A
Text: IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)
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IS43DR32800A,
IS43/46DR32801A
8Mx32
256Mb
18-compatible)
DDR2-667D
IS43DR32801A-3DBLI
DDR2-533C
IS43DR32801A-37CBLI
DDR2-400B
is46dr32801a-5bbla1
126-ball
IS46DR32801A
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IS42VM16160D-8TLI
Abstract: IS42VM83200D
Text: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information OCTOBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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IS42VM83200D
IS42VM16160D
IS42VM32800D
32Mx8,
16Mx16,
8Mx32
256Mb
IS42VM16160D-8TLI
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PDF
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Untitled
Abstract: No abstract text available
Text: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES DESCRIPTION n n n n n n n The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119
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WED3DL328V
8Mx32
WED3DL328V
4x2Mx32.
8Mx16
133MHz,
125MHz
100MHz52
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M32V-XBX
8Mx32
120ns
13x22mm
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10001000XXX
Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
Text: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M32V-XBX
8Mx32
120ns
13x22mm
10001000XXX
PWA with 555
W78M32V-XBX
SA139-SA142
SA175-SA178
SA187-SA190
SA163-SA166
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100MHZ
Abstract: 133MHZ 8MX32 WED3DL328V
Text: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES DESCRIPTION The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer
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WED3DL328V
8Mx32
WED3DL328V
4x2Mx32.
8Mx16
133MHZ,
125MHZ
100MHZ
100MHZ
133MHZ
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HMD8M32M4
Abstract: HMD8M32M4G R1571
Text: HANBit HMD8M32M4G 32Mbyte 8Mx32 72-pin SIMM, FP Mode, 4K Ref. 5V Part No. HMD8M32M4, HMD8M32M4G GENERAL DESCRIPTION The HMD8M32M4 is a 8M x 32bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1uF or 0.22uF
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HMD8M32M4G
32Mbyte
8Mx32)
72-pin
HMD8M32M4,
HMD8M32M4
32bit
50-pin
72-pin,
HMD8M32M4G
R1571
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53210804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53210804CY0/CT0-C DRAM MODULE M53210804CY0/CT0-C
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M53210804CY0/CT0-C
8Mx32
4Mx16
M53210804CY0/CT0-C
4Mx16,
8Mx32bits
4Mx16bits
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HYM532810BM
Abstract: HY5117400B HYM532810B HYM532810BMG
Text: HYM532810B M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810B M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling
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HYM532810B
8Mx32
8Mx32-bit
HY5117400B
HYM532810BM
HYM532810BMG
72-Pin
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Untitled
Abstract: No abstract text available
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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256MBit
8Mx32bit)
256Mbit
32bits
200us
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sc413
Abstract: BC163 quanta GND194 g7001 G71M-U AK-34 DDR3 Infineon quanta computer Quanta AT8
Text: 5 4 3 2 CH-A NVIDIA PCI-E x16 D G71M G71M-U CH-B FCBGA 1148pin TV CH-C C CRT MXM CONNECTOR 1 VRAM GDDR3 8Mx32 16Mx32 D VRAM GDDR3 8Mx32 16Mx32 VRAM C GDDR3 8Mx32 16Mx32 LVDS CH-D VRAM GDDR3 8Mx32 16Mx32 2.5V B B 3.3V A VIN VCORE VRM VIN 1.8V VRM VCORE A 1.8V
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8Mx32
16Mx32
G71M-U
1148pin
sc413
BC163
quanta
GND194
g7001
G71M-U
AK-34
DDR3 Infineon
quanta computer
Quanta AT8
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RFU20
Abstract: G72M sc413 BLM18PG181SN1D nvidia g72m 7SH02 nvidia MXM MXM CONNECTOR G72M-V quanta computer
Text: 5 4 D 3 2 CH-A NVIDIA PCI-E x16 CH-B FCBGA 820pin MXM CONNECTOR D VRAM GDDR3 8Mx32 16Mx32 Page8 Channel C is available on G73M only CRT C VRAM GDDR3 8Mx32 16Mx32 Page7 G72M G73M TV 1 C LVDS Page3 ~ 6 2.5V B B 3.3V Page2 VIN VCORE VRM VCORE 1.8V VRM 1.8V Page9
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8Mx32
16Mx32
820pin
NONPHY-X16
FG-13X91-20-230P
H-C236D118P2
RFU20
G72M
sc413
BLM18PG181SN1D
nvidia g72m
7SH02
nvidia MXM
MXM CONNECTOR
G72M-V
quanta computer
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sis964L
Abstract: ASUS D2556 RN69E J2 Q24A B 78L05 C535 B KBC-M38857 74LV74 smd diode a6u
Text: 5 4 3 2 1 FILE LIST FAN A6K BLOCK DIAGRAM D THERMAL +3.3VS +5VS AMD K8 VRAM 8Mx32x2 CLOCK GEN TV OUT +3.3VS C 15 19 Nvidia NV44M RGB CRT 41 EAR 03 42 43 44 AC'97 CODEC AUDIO AMP 04 05 +2.5V +2.6V 45 PCI-E 1x16 Screw Hole 40 46 SIS 756 +3.3VS, +2.5VS, +1.8VS,+1.8P_VS,
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8Mx32x2
NV44M
ATA100
47KOHM
CN17/CN18/CN19/CN20/CN33
sis964L
ASUS
D2556
RN69E
J2 Q24A B
78L05
C535 B
KBC-M38857
74LV74
smd diode a6u
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PDF
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HY5DU573222AFM-25
Abstract: HY5DU573222AFM HY5DU573222AFM-28 HY5DU573222AFM-33 HY5DU573222AFM-36
Text: HY5DU573222AFM 256M 8Mx32 GDDR SDRAM HY5DU573222AFM This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU573222AFM
8Mx32)
HY5DU573222AFM-36
HY5DU573222AFM-28/33
HY5DU573222AFM-33/36/4
144ball
55Max
HY5DU573222AFM-25
HY5DU573222AFM
HY5DU573222AFM-28
HY5DU573222AFM-33
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5DW573222F P 256M(8Mx32) GDDR SDRAM HY5DW573222F(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DW573222F
8Mx32)
500Mhz
450Mhz
144ball
55Max
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PDF
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GDDR
Abstract: 8Mx32 memory samsung
Text: Date : March 09 , 2005 Application ApplicationNote Note Title : The comparison of 8Mx32 GDDR F-die and F’-die in view of tRP/tWR/ tWR_A/tDAL Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San16, Banwol-Ri, Taean-Eup,
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8Mx32
San16,
230MHz>
GDDR
memory samsung
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Untitled
Abstract: No abstract text available
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004
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HY5RS573225F
8Mx32)
240ohm
240ohms
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CPH1000
Abstract: No abstract text available
Text: WF8M32-XG4DX5 HI-RELIABILITY PRODUCT 8Mx32 5V FLASH MODULE ADVANCED* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Supports reading or programming data to a sector not being erased. ■ Access Time of 100, 120, 150ns
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WF8M32-XG4DX5
8Mx32
150ns
64KBytes
CPH1000
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IS42RM32800D
Abstract: No abstract text available
Text: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES OCTOBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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IS42SM83200D
IS42SM16160D
IS42SM32800D
IS42RM83200D
IS42RM16160D
IS42RM32800D
32Mx8,
16Mx16,
8Mx32
256Mb
IS42RM32800D
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM5328004BK/BKG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04BK is a 8M bit x 32 Dynamic RAM high density memory module. The
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KMM5328004BK/BKG
KMM5328104BK/BKG
KMM5328104BK/BKG
8Mx32
KMM53280
KMM5328004BK
cycles/64ms
KMM5328004BKG
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PDF
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Untitled
Abstract: No abstract text available
Text: b?E D S A M S UN G E L E C T R O N I C S INC • TThMlME 00132=12 BIM ■ S M G K KMM5328000V/VG/VP DRAM MODULES 8Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC • • • • • • • tcAC tRC KMM5328000V-6 60ns
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KMM5328000V/VG/VP
8Mx32
KMM5328000V-6
110ns
130ns
KMM5328000V-8
KMM5328000V-7
KMM5328000V
bitsx36
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