61N50
Abstract: 58N50 D-68623 92810G
Text: IXFN 58N50 IXFN 61N50 Preliminary Data Sheet VDSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V V GS Continuous ±20
|
Original
|
PDF
|
58N50
61N50
58N50
61N50
OT-227
D-68623
92810G
|
MFL-75
Abstract: 4835 mosfet mfl sot
Text: HiPerFET Power MOSFET IXFN 58N50 IXFN 61 N50 Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 500 V Voon ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V 58 61 232 244 A A A A 61 A = 25°C to 150°C; Rgs= 1.0 MQ Tc = 25°C 'OM Tc = 25°C 1
|
OCR Scan
|
PDF
|
IXFN58N50
IXFN61N50
58N50
61N50
OT-227
l53432
MFL-75
4835 mosfet
mfl sot
|
1xys
Abstract: No abstract text available
Text: □IXYS IXFN 58N50 IXFN 61N50 Preliminary Data Sheet V DSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET p ^D25 DS on 58A 61A 85 m£2 75 mû N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j = 25°C to 150°C 500 V v DGR
|
OCR Scan
|
PDF
|
58N50
61N50
58N50
61N50
150eC,
1xys
|