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    58N50 Search Results

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    58N50 Price and Stock

    ABLIC Inc. S-8358N50MC-O7JT2U

    IC REG CTRLR BOOST SOT23-5
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    DigiKey S-8358N50MC-O7JT2U Cut Tape 100 1
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    S-8358N50MC-O7JT2U Reel 3,000
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    S-8358N50MC-O7JT2U Digi-Reel 1
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    Avnet Americas S-8358N50MC-O7JT2U Reel 16 Weeks 3,000
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    Mouser Electronics S-8358N50MC-O7JT2U
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    Chip One Stop S-8358N50MC-O7JT2U Cut Tape 90
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    ABLIC Inc. S-8358N50MC-O7JT2G

    IC REG CTRLR BOOST SOT23-5
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    DigiKey S-8358N50MC-O7JT2G Reel 3,000
    • 1 -
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    • 10000 $0.69589
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    Avnet Americas S-8358N50MC-O7JT2G Reel 16 Weeks 3,000
    • 1 $0.71
    • 10 $0.71
    • 100 $0.71
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    • 10000 $0.71
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    Mouser Electronics S-8358N50MC-O7JT2G
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    58N50 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    61N50

    Abstract: No abstract text available
    Text: VDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 ID25 RDS on 58 A 85 mΩ Ω Ω 61 A 75 mΩ 500 V 500 V N-Channel Enhancement Mode Preliminary Data Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 500 V V DGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


    Original     		58N50 61N50 OT-227 E153432 61N50 PDF

    61N50

    Abstract: 58N50 D-68623 92810G
    Text: IXFN 58N50 IXFN 61N50 Preliminary Data Sheet VDSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V V GS Continuous ±20


    Original     		58N50 61N50 58N50 61N50 OT-227 D-68623 92810G PDF

    MFL-75

    Abstract: 4835 mosfet mfl sot
    Text: HiPerFET Power MOSFET IXFN 58N50 IXFN 61 N50 Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 500 V Voon ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V 58 61 232 244 A A A A 61 A = 25°C to 150°C; Rgs= 1.0 MQ Tc = 25°C 'OM Tc = 25°C 1


    OCR Scan     		IXFN58N50 IXFN61N50 58N50 61N50 OT-227 l53432 MFL-75 4835 mosfet mfl sot PDF

    TEST20

    Abstract: No abstract text available
    Text: □ IXYS vDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 500 V 500 V p ^D25 DS on 58 A 85 m fì 61 A 75 m fì N-Channel Enhancement Mode Preliminary Data os Symbol TestC onditions v DSS Tj = 2 5 °C to 150°C vDGR T, = 25°C to 150°C; £ s= 1.0 M il


    OCR Scan     		58N50 61N50 OT-227 E153432 61N50 TEST20 PDF

    pixy

    Abstract: No abstract text available
    Text: PiXYS a«i»«iawawiWBt»i High Current Power MOSFET . - V DSS IXTN 58N50 IXTN 61N50 500 V 500 V lg! F js n g g ìg R ^D25 DS on 58 A 85 mQ 61 A 75 m il N-Channel Enhancement Mode Symbol Test Conditions Voss v D0B Tj = 25°C to 150°C 500 V Tj = 25°C to 150°C; Rss= 1.0 M£2


    OCR Scan     		58N50 61N50 61N50 OT-227 E153432 C2-53 pixy PDF

    1xys

    Abstract: No abstract text available
    Text: □IXYS IXFN 58N50 IXFN 61N50 Preliminary Data Sheet V DSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET p ^D25 DS on 58A 61A 85 m£2 75 mû N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j = 25°C to 150°C 500 V v DGR


    OCR Scan     		58N50 61N50 58N50 61N50 150eC, 1xys PDF

    Untitled

    Abstract: No abstract text available
    Text: PIX Y S 1 vDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 500 V 500 V □ ^D25 DS on 58 A 85 mQ 61 A 75 m ß N-Channel Enhancement Mode Preliminary Data Symbol Test Conditions Maximum Ratings v* DSS T0 = 25°Cto150°C 500 V v DCR Tj = 25°C to 150°C; RGS= 1.0 MQ


    OCR Scan     		58N50 61N50 Cto150Â OT-227 E153432 PDF

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 PDF

    mosfet 4800

    Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055


    OCR Scan     		200N06 200N07 150N10 100N20 106N20 73N30 44N50 48N50 58N50 61N50 mosfet 4800 ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30 PDF

    11n80

    Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
    Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088


    OCR Scan     		O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80 PDF

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B PDF

    6N80

    Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68


    OCR Scan     		67N10 75N10 42N20 50N20 68N20 35N30 40N30 30N45 12N50A 21N50 6N80 IXTN 36N50 C 40N160 40N140 ixtn 79n20 irfp 240 IXTK33N50 IXTN21N100 IRFP PDF