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    200N06 Search Results

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    200N06 Price and Stock

    Micro Commercial Components MCP200N06Y-BP

    N-CHANNEL MOSFET,TO-220AB(H)
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    DigiKey MCP200N06Y-BP Tube 2,563 1
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    Mouser Electronics MCP200N06Y-BP
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    Cornell Dubilier Electronics Inc 382LX332M200N062

    CAP ALUM 3300UF 20% 200V SNAP TH
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    DigiKey 382LX332M200N062 Bulk 858 1
    • 1 $13.2
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    TTI 382LX332M200N062 Bulk 144 48
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    Micro Commercial Components MCB200N06Y-TP

    N-CHANNEL MOSFET, D2-PAK
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    DigiKey MCB200N06Y-TP Digi-Reel 675 1
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    MCB200N06Y-TP Cut Tape 675 1
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    MCB200N06Y-TP Reel 800
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    Mouser Electronics MCB200N06Y-TP
    • 1 $1.95
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    • 100 $1.29
    • 1000 $0.925
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    Cornell Dubilier Electronics Inc 383LX332M200N062

    CAP ALUM 3300UF 20% 200V SNAP TH
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    DigiKey 383LX332M200N062 Bulk 582 1
    • 1 $22.66
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    TTI 383LX332M200N062 Bulk 1
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    Micro Commercial Components MCB200N06YA-TP

    N-CHANNEL MOSFET, D2-PAK
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    DigiKey MCB200N06YA-TP Cut Tape 350 1
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    MCB200N06YA-TP Digi-Reel 350 1
    • 1 $2.75
    • 10 $1.778
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    MCB200N06YA-TP Reel 800
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    Mouser Electronics MCB200N06YA-TP
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    200N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200N06P

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET VDSS ID25 IXTQ 200N06P RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM Transient Continuous ±30 ±20 V V ID25 TC = 25° C


    Original     		PDF 200N06P 200N06P

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET VDSS ID25 IXTQ 200N06P = 60 V = 200 A ≤ 6.0 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM Transient Continuous


    Original     		PDF 200N06P

    200N06

    Abstract: SOT-227 Package
    Text: HiPerFETTM Power MOSFETs IXFN 200 N06 IXFN 200 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IL RMS TC= 25°C; Chip capability


    Original     		PDF 728B1 200N06 SOT-227 Package

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient I D25 TC= 25°C; Chip capability


    Original     		PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    IXFN180

    Abstract: 200N06
    Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability


    Original     		PDF 200N06/200N07 180N07 IXFN180 150OC 100OC IXFN180 200N06

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    200N07

    Abstract: 180N07 200N06 BT 1496
    Text: HiPerFETTM Power MOSFETs VDSS Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient N07 N06 N07 N06 ID25 A TC= 25°C ID130 IDM IAR TC= 130°C, limited by external leads TC= 25°C, pulse width limited by TJM


    Original     		PDF ID130 200N06/200N07 180N07 200N07 200N06 BT 1496

    200N07

    Abstract: 200N06 180N07 IXFN180
    Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability


    Original     		PDF 150OC 100OC 200N07 200N06 180N07 IXFN180

    mosfet 4800

    Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055


    OCR Scan     		PDF 200N06 200N07 150N10 100N20 106N20 73N30 44N50 48N50 58N50 61N50 mosfet 4800 ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30

    200N06

    Abstract: 4835 b 110N06 n
    Text: HiPerFET Power MOSFETs v ' * f k 110 no7 IXFN 200 N07 IXFK110N06 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr i y p k o n n Nfifi D DSS ^D25 DS on 70 V 110 A 70 V 200 A 60 V 110 A 60 V 200 A trr < 250 ns 6 6 6 6 m£2 mQ mQ mQ TO-264 AA (IXFK)


    OCR Scan     		PDF IXFK110N06 O-264 OT-227 E153432 13Fig, 110NO6 200M06 110N07 200N06 4835 b 110N06 n

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HiPerFET Power MOSFETs IXFN 200 N06 IXFN180 N07 IXFN 200 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, L ow trr Symbol N07 N06 N07 N06 70 60 70 60 V V V V Continuous ±20 V Transient ±30 V 180 A Td = 25°C to 150°C; RGS = 1 M ß


    OCR Scan     		PDF IXFN180 E153432 200N06/200N07 180N07 200N06 180N07 200N07