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    AGRA10 Search Results

    AGRA10 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGRA10E Agere Systems FET Transistor, 10W, 100MHz to 1GHz, N-Channel E-Mode Original PDF
    AGRA10EU Agere Systems 10 W, 100 MHz - 1.0 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGRA10GM Agere Systems MOSFET, 10W, 100MHz-1.0GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGRA10XM Agere Systems MOSFET, 10W, 100MHZ-1.0GHZ, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGRA10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATC100B101JW500X

    Abstract: ATC100B1R0BW500X C1206104K5RAC GRM43-2X7R10 AGRA10GM JESD22-C101A c.d.m. technology avx 2743019446 AVX Manufacture Label MA4853
    Text: Preliminary Data Sheet September 2004 AGRA10GM Plastic Overmold 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS plastic overmold RF power


    Original     		PDF AGRA10GM AGRA10 IS-95 pro9138 DS04-293RFPP DS04-257RFPP) ATC100B101JW500X ATC100B1R0BW500X C1206104K5RAC GRM43-2X7R10 JESD22-C101A c.d.m. technology avx 2743019446 AVX Manufacture Label MA4853

    MOSFET J162

    Abstract: J473 MOSFET J147
    Text: Preliminary Data Sheet March 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


    Original     		PDF AGRA10XM AGRA10 IS-95 DS03-127RFPP MOSFET J162 J473 MOSFET J147

    AGRA10E

    Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
    Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable


    Original     		PDF AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors

    AGR045010

    Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
    Text: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


    Original     		PDF AGRA10E AGRA10E IS-95 DS04-096RFPP DS03-161RFPP) AGR045010 AGRA10EU JESD22-C101A RF MOSFET CLASS AB

    0203S

    Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
    Text: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


    Original     		PDF AGRA10XM AGRA10 IS-95 DS04-139RFPP DS03-127RFPP) 0203S AGRA10XM JESD22-C101A J162 j507 MOSFET J147

    tns capacitors

    Abstract: capacitor F3 037 02 100B120FW500X
    Text: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


    Original     		PDF AGRA10E IS-95 DS04-196RFPP DS04-096RFPP) tns capacitors capacitor F3 037 02 100B120FW500X

    MOSFET J162

    Abstract: j162 MOSFET J147
    Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


    Original     		PDF AGRA10XM AGRA10 IS-95 DS04-202RFPP DS04-139RFPP) MOSFET J162 j162 MOSFET J147

    ATC100B101JW500X

    Abstract: 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500
    Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for personal cellular band IS-95 865 MHz to


    Original     		PDF AGRA10XM AGRA10 IS-95 withstan09-9138 DS04-257RFPP DS04-202RFPP) ATC100B101JW500X 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM