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    ATC100B1R0BW500 Search Results

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    Kyocera AVX Components 100B1R0BW500XT

    Silicon RF Capacitors / Thin Film 500volts 1pF
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    TTI 100B1R0BW500XT Reel 500 500
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    ATC100B1R0BW500 Datasheets Context Search

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    ATC100B101JW500X

    Abstract: ATC100B1R0BW500X C1206104K5RAC GRM43-2X7R10 AGRA10GM JESD22-C101A c.d.m. technology avx 2743019446 AVX Manufacture Label MA4853
    Text: Preliminary Data Sheet September 2004 AGRA10GM Plastic Overmold 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS plastic overmold RF power


    Original     		AGRA10GM AGRA10 IS-95 pro9138 DS04-293RFPP DS04-257RFPP) ATC100B101JW500X ATC100B1R0BW500X C1206104K5RAC GRM43-2X7R10 JESD22-C101A c.d.m. technology avx 2743019446 AVX Manufacture Label MA4853 PDF

    GRM1882C1H100J

    Abstract: No abstract text available
    Text: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN16C105MK 25deg D10MHz 45dBm /-10MHz GRM1882C1H100J PDF

    ATC100B101JW500X

    Abstract: 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500
    Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for personal cellular band IS-95 865 MHz to


    Original     		AGRA10XM AGRA10 IS-95 withstan09-9138 DS04-257RFPP DS04-202RFPP) ATC100B101JW500X 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500 PDF