MOSFET J162
Abstract: J473 MOSFET J147
Text: Preliminary Data Sheet March 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz
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AGRA10XM
AGRA10
IS-95
DS03-127RFPP
MOSFET J162
J473
MOSFET J147
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0203S
Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
Text: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz
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Original
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PDF
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AGRA10XM
AGRA10
IS-95
DS04-139RFPP
DS03-127RFPP)
0203S
AGRA10XM
JESD22-C101A
J162
j507
MOSFET J147
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MOSFET J162
Abstract: j162 MOSFET J147
Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz
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Original
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PDF
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AGRA10XM
AGRA10
IS-95
DS04-202RFPP
DS04-139RFPP)
MOSFET J162
j162
MOSFET J147
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ATC100B101JW500X
Abstract: 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500
Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for personal cellular band IS-95 865 MHz to
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AGRA10XM
AGRA10
IS-95
withstan09-9138
DS04-257RFPP
DS04-202RFPP)
ATC100B101JW500X
08055C103KATMA
AGRA10XM
cdm 316
JESD22-C101A
ATC100B1R0BW500
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