AN1027 Search Results

tesec DV240

Abstract: AN1027 AN-569 DV240 NDS9956
Contextual Info: AN1027 April, 1996 Maximum Power Enhancement Techniques for SuperSOTTM-8 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus

V1F diode

Abstract: PNX2000 T010 T020 volume i2c i2c graphic equalizer EPICS-7
Contextual Info: PNX2000 Register Summary List AN10276_1 Audio Video Input Processor Rev. 01 — 15 December 2003 PNX2000 RSL Philips Semiconductors Audio Video Input Processor RSL Contents Aperture Map PNX2000 AUDIO_DSP Register Summary AUDIO_DSP Registers 0x4 0x8 0xC 0x10

AN10273

Abstract: AN10 BUK764R0-55B 681688
Contextual Info: AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Rev. 02 — 27 March 2009 Application note Document information Info Content Keywords Power MOSFET, single-shot, avalanche, ruggedness, safe operating condition Abstract Power MOSFETs are normally measured based on single-shot

FZB-20-15-1661v02

Abstract: pcb lcd display connector EMC PCB Layout "LCD DRIVER"
Contextual Info: Philips Semiconductors AN10272-01 Application Note: LCD driver and EMC Application Note LCD driver and EMC AN10272-01 Rev. 01 File under Philips Semiconductors Application Notes FZB-20-15-1661v02 1 August 2002 Philips Semiconductors AN10272-01 Application Note: LCD driver and EMC

CA2600

Abstract: 601B AN1027 CA2200 overlay transistor metallization
Contextual Info: Order this document by AN1027/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1027 RELIABILITY/PERFORMANCE ASPECTS OF CATV AMPLIFIER DESIGN Prepared by: Michael D. McCombs “Reliability is the probability of a device performing its purpose adequately for the period of time

failure rate Freescale

Abstract: ca2200 CA2600 MOTOROLA catv hybrid 601B AN1027 james bond "failure rate" Freescale
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1027/D SEMICONDUCTOR APPLICATION NOTE AN1027 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Reliability/Performance Aspects of CATV

AN10273

Abstract: philips 170c avalanche inductor 2mH mosfet pp BUK764R0-55B
Contextual Info: H Philips Semiconductor Applications AN10273_1 Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating Introduction Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET.

Contextual Info: BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.

Contextual Info: Agilent Radiometrically Tested AlInGaP II LED Lamps for Sensor-Based Applications Data Sheet SunPower Series Precision Optical Performance HLMP-ED80-xxxxx Description Radiometrically Tested Precision Optical Performance AlInGaP II aluminum indium gallium

BUK9Y14-40B

Contextual Info: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This

BUK75

Abstract: BUK754R3-75C BUK7E4R3-75C
Contextual Info: BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 — 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.

55A4

Abstract: BUK98150-55A SC-73
Contextual Info: BUK98150-55A N-channel TrenchMOS logic level FET Rev. 04 — 11 June 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.

BUK7226-75A

Contextual Info: BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This

BUK75

Abstract: BUK753R4-30B BUK763R4-30B
Contextual Info: BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 — 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS technology.

transistor fet 3884

Abstract: MS-013 SO20 AN10273
Contextual Info: BUK9MGP-55PTS Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

BUK7Y13-40B

Abstract: automotive abs 10S100
Contextual Info: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

BUK7880-55A

Abstract: SC-73
Contextual Info: BUK7880-55A N-channel TrenchMOS standard level FET Rev. 01 — 1 November 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.

BUK75

Abstract: BUK754R0-55B BUK764R0-55B
Contextual Info: BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 — 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

PSMN050-80PS

Contextual Info: PSMN050-80PS N-channel 80 V 50 mΩ standard level MOSFET Rev. 01 — 10 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: HLMP-Yxxx T-1 3 mm GaP/GaAsP LED Lamps Data Sheet Description Features This family of T-1 lamps is widely used in general purpose indicator and back lighting applications. The optical design is balanced to yield superior light output and wide viewing angles. Several intensity choices are available in each

Contextual Info: HLMP-4100/4101 T-13/4 5 mm Double Heterojunction AlGaAs Very High Intensity Red LED Lamps Data Sheet Description Features These solid state LED lamps utilize newly developed double heterojunction (DH) AlGaAs/GaAs material technology. This LED material has outstanding light output efficiency

Electrohydraulic Power Steering

Abstract: A240D
Contextual Info: BUK7E1R9-40E N-channel TrenchMOS standard level FET 5 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: D2 PA K BUK768R1-40E N-channel TrenchMOS standard level FET Rev. 1.1 — 10 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: BUK9637-100E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high