BDT86F Search Results

BDT86F Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BDT86F		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BDT86F		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
BDT86F		Philips Semiconductors	SILICON EPITAXIAL POWER TRANSISTORS		Scan	PDF

BDT86F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BDT88F Abstract: BDT82F BDT84F BDT86F Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F	Original	BDT82F/84F/86F/88F BDT82F; BDT84F; -100V BDT86F; -120V BDT88F BDT81F/83F/85F/87F BDT82F BDT88F BDT82F BDT84F BDT86F	PDF
MAX2136 Abstract: t331t BDT81F BDT82F BDT83F BDT84F BDT86F BDT87F BDT88F Text: BDT81F; BDT83F BDT85F; BDT87F PHILIPS international SbE D • VLlOflEh 0 Q 4 3 3 1 S LS'i ■ PHIN SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F.	OCR Scan	BDT81F; BDT83F BPT85F; BDT87F 0D4331S OT186 BDT82F, BDT84F, BDT86F BDT88F. MAX2136 t331t BDT81F BDT82F BDT83F BDT84F BDT87F BDT88F	PDF
BDT81F Abstract: BDT82F BDT83F BDT84F BDT85F BDT86F BDT87F BDT88F MAX2136 Text: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5 bE D • 711002b 0043320 725 H I P H I N T -37-11 SILICON EPITAXIAL POWER TRANSISTORS PIMP silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.	OCR Scan	BDT82F; BDT84F BDT86F; BDT88F 711002b T-33-/? OT186 BDT81F, BDT83F, BDT85F BDT81F BDT82F BDT83F BDT86F BDT87F BDT88F MAX2136	PDF
Untitled Abstract: No abstract text available Text: BDT81F; BDT83F l^BDT85F; BDT87F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T 186 envelope with an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F. Q U IC K R E F E R E N C E D A T A	OCR Scan	BDT81F; BDT83F BDT85F; BDT87F BDT82F, BDT84F, BDT86F BDT88F. BDT81F bb53T31	PDF
BDT88F Abstract: 36 TI BBL BDT86 Text: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5bE » • 711üfl2b D D M 3 3 2 Q 72S ■ PH IN T— SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BDT81F, BDT83F, BD T85F and BDT87F.	OCR Scan	BDT82F; BDT84F BDT86F; BDT88F OT186 BDT81F, BDT83F, BDT87F. BDT82F OT186. BDT88F 36 TI BBL BDT86	PDF
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11	PDF