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Philips Semiconductors BDT95 Transistor
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BDT95 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
BDT95	Philips Semiconductors	Silicon Epitaxial Base Power Transistors	Original	PDF
BDT95	Magnatec	Silicon Epitaxial Base Power Transistors	Scan	PDF
BDT95	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BDT95	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BDT95	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BDT95	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BDT95	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BDT95	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BDT95	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BDT95	Unknown	Transistor Replacements	Scan	PDF
BDT95	Philips Semiconductors	SILICON EPITAXIAL BASE POWER TRANSISTORS	Scan	PDF
BDT95F	Philips Semiconductors	Silicon Epitaxial Power Transistors	Original	PDF
BDT95F	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BDT95F	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

BDT95F	Philips Semiconductors	SILICON EPITAXIAL POWER TRANSISTORS	Scan	PDF

BDT95 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BDT93 Abstract: BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION •DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96	Original	BDT91/93/95 BDT91; BDT93; BDT95 BDT92/94/96 BDT91 BDT93 BDT93 BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200	PDF
2u 62 diode Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20	Original	SDT3208 SDT7140 BDT95 BDT96 2u 62 diode KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
BD119 Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20	Original	AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR	PDF
044H11 Abstract: KT808B 044H10 kt808BM BJG 36 kt808 2s021 B0313 2n1810 Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 SOT7S09 SOT7S09 2N3714 B0245B B0245B B0245B B0313 2S041 ~~~g~ 25 30 ST28143 2SC1115 2SC1115 OTL3203 SOT3207 SOT3207 SOT3207 2N500S ~~~~n 35 40 2N5S24 2N5730 2N4301 2NS128 BOY91 BOS11 GSDB10008 SOT701S	Original	044H10 KSP1152 KSP1172 OT7A09 OT7S09 2N3714 B0245B 044H11 KT808B kt808BM BJG 36 kt808 2s021 B0313 2n1810	PDF
KT808AM Abstract: 2SD867Y KT808a BDX51 2N3076 kt808 7F54 2SC1343 2sd339 BD245C Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4	Original	O-247 OT-186 O-111 T0-61 KT808AM 2SD867Y KT808a BDX51 2N3076 kt808 7F54 2SC1343 2sd339 BD245C	PDF
BDT95F Abstract: BDT91F BDT92F BDT93F BDT96F Text: BDT91F; BDT93F BDT95F pHILIPS INT ERNATIONAL SbE D • 711GÔSb G04333D b74 ■ P H I N 7^ - 3 3 - ^ ? SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a S O T186 envelope w ith an electrically insulated mounting base. PNP complements are B D T 92F , BD T94Fand B D T 96F .	OCR Scan	BDT91F; BDT93F BDT95F 711DflSb D04333D BDT92F, BDT94Fand BDT96F. BDT91F OT186. BDT95F BDT92F BDT96F	PDF
BDT94 Abstract: BDT96 BDT93 SOT92 BDT91 BDT92 BDT95 IEC134 Text: BDT92 BDT94 BDT96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general am plifier and switching applications. N-P-N complements are BDT91, BDT93 and BDT95. Q UICK REFERENCE D A T A	OCR Scan	BDT92 BDT94 BDT96 BDT91, BDT93 BDT95. BDT94 D03M7AB BDT96 SOT92 BDT91 BDT92 BDT95 IEC134	PDF
Untitled Abstract: No abstract text available Text: BDT91F; BDT93F BDT95F PHILIPS INTERNATIONAL SbE D • 7 1 1 D Ô 2 b G G M 3 3 3 D b74 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F.	OCR Scan	BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. OT186.	PDF
BDT93 Abstract: BDT91 BDT95 BDT94 BDT92 BDT96 3313 Text: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL 5bE J> I 7110fl2Li 0043322 STö M P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS N -P -N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general a m p lifie r and sw itching applications.	OCR Scan	BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT91 BDT93 711002b BDT95 BDT92 BDT96 3313	PDF
BDT91F Abstract: BDT92F BDT94F BDT95F BDT96F BDT96 Text: BDT92F; BDT94F BDT96F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F. QUICK REFERENCE DATA BDT92F 94F 96F -VC BO	OCR Scan	BDT92F; BDT94F BDT96F aSOT186 BDT91F, BDT93Fand BDT95F. bdt92f DO3470S BDT91F BDT95F BDT96F BDT96	PDF
bdt95a Abstract: BDT96 BDT93 BDT91 BDT92 BDT94 BDT95 Text: \ M A G IN IA TEC BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general am plifier and switching applications. P-N-P com plem ents are BDT92, BDT94 and BDT96.	OCR Scan	BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT93 bdt95a BDT96 BDT91 BDT92 BDT95	PDF
BDT95 Abstract: No abstract text available Text: _ y v _ BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96.	OCR Scan	BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. DBDT93 BDT95	PDF
Untitled Abstract: No abstract text available Text: BDT92F; BDT94F BDT96F _ y v SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.	OCR Scan	BDT92F; BDT94F BDT96F aSOTl86 BDT91F, BDT93Fand BDT95F. BDT92F	PDF

BDT95 Abstract: BOT93 BDT93 BDT96 BOT95 BDT91 BDT92 BDT94 Text: BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96. QUICK REFERENCE DATA	OCR Scan	BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT93 Q3477M BDT95 BOT93 BDT96 BOT95 BDT91 BDT92	PDF
T-33-O Abstract: BDT94F BDT91F BDT92F BDT95F BDT96F 043341 Text: BDT92F; BDT94F BDT96F I SbE T> PHILIPS INTERNATIONAL m 7110ÖEb 004334G 513 BIPHIN SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each inaSOT186 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.	OCR Scan	BDT92F; BDT94F BDT96F 711002b DQ4334G T-33-O inaSOT186 BDT91F, BDT93Fand BDT95F. T-33-O BDT91F BDT92F BDT95F BDT96F 043341	PDF
BDT95 Abstract: bdt93 Text: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL SbE D I J _ v _ 711002t, 0043322 5 Tfl » P H I N T - 3 ? ' I 3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio output stages and general am plifier and switching applications.	OCR Scan	BDT91 BDT93 BDT95 711002t, 711005b 0QM33E7 BDT95	PDF
Untitled Abstract: No abstract text available Text: BDT91F; BDT93F BDT95F JV SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. QUICK REFERENCE DATA BDT91F 93F 95F	OCR Scan	BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. BDT91F 003477b	PDF
BDT91F Abstract: BDT92F BDT93F BDT95F BDT96F Text: BDT91F; BDT93F BDT95F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. Q UICK REFERENCE D A T A BDT91F 93F 95F	OCR Scan	BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. BDT91F OT186. bbS3T31 BDT92F BDT95F BDT96F	PDF
2009-6F Abstract: No abstract text available Text: BDT92F; BDT94F BDT96F PHILIPS INTERNATIONAL SbE ]> • 711DÖEfc> Q 0 4 3 3 M D S13 ■ P H I N T -3 3 -O t SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOT186 envelope with an electrically insulated mounting base.	OCR Scan	BDT92F; BDT94F BDT96F aSOT186 BDT91F, BDT93Fand BDT95F. BDT92F 711Qfl5b T-33-09 2009-6F	PDF
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8	PDF
BDT95 Abstract: BDT96 BDT91 1346P pht 094 BDT93 Text: 05-DEC-1997 12=45 FROM MAGNATEC TO 01132794449 P.04^08 r v s 2 5 1 0 BDT91 BDT93 •BDT95 rC \ MAGNA T f ï r K , , - o b o SILiCON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and	OCR Scan	05-DEC-1997 BDT91 BDT93 BDT95 8DT92, 8DT94 BDT96. BDT93 BDT95 BDT96 BDT91 1346P pht 094	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF

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BDT95 Price and Stock

Philips Semiconductors BDT95

BDT95 Datasheets (15)

BDT95 Datasheets Context Search

BDT93

2u 62 diode

BUV48I

BD119

044H11

KT808AM

BDT95F

BDT94

Untitled

BDT93

BDT91F

bdt95a

BDT95

Untitled

BDT95

T-33-O

BDT95

Untitled

BDT91F

2009-6F

BPW22A

BDT95

aeg diode Si 61 L

transistor f6 13003