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    BDV64B Search Results

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    BDV64B Price and Stock

    onsemi BDV64BG

    TRANS PNP DARL 100V 10A TO247-3
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    DigiKey BDV64BG Tube 399 1
    • 1 $3.45
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    Avnet Americas BDV64BG Tube 12 Weeks 450
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    Mouser Electronics BDV64BG 421
    • 1 $3.75
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    • 100 $1.92
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    Arrow Electronics BDV64BG 267 12 Weeks 1
    • 1 $3.3996
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    BDV64BG 15 12 Weeks 30
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    Newark BDV64BG Bulk 628 1
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    RS BDV64BG Bulk 2 Weeks 30
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    Onlinecomponents.com BDV64BG
    • 1 -
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    Rochester Electronics BDV64BG 109 1
    • 1 $1.57
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    • 100 $1.48
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    TME BDV64BG 160 1
    • 1 $2.88
    • 10 $2.4
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    Avnet Silica BDV64BG 180 13 Weeks 30
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    Flip Electronics BDV64BG 105
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    New Advantage Corporation BDV64BG 180 1
    • 1 -
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    • 100 $2.37
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    onsemi BDV64B

    TRANS PNP DARL 100V 10A SOT93
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    DigiKey BDV64B Tube
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    Bristol Electronics BDV64B 20
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    Quest Components BDV64B 16
    • 1 $2.1
    • 10 $1.575
    • 100 $1.3125
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    Rochester Electronics BDV64B 7 1
    • 1 $0.9968
    • 10 $0.9968
    • 100 $0.937
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    Central Semiconductor Corp BDV64B

    TRANS PNP 100V 12A TO218
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    DigiKey BDV64B Bulk
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    Bourns Inc BDV64B-S

    TRANS PNP DARL 100V 12A SOT93
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    DigiKey BDV64B-S Tube 900
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    Avnet Abacus BDV64B-S 143 Weeks 9,000
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    Aptina Imaging BDV64BG

    Trans Darlington PNP 100V 10A 125000mW 3-Pin(3+Tab) TO-247 Tube
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    Verical BDV64BG 264 4
    • 1 -
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    • 100 $1.8872
    • 1000 $1.4905
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    BDV64BG 15 15
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    Find more BDV64B price and stock on Findchips.com

    BDV64B Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDV64B Bourns PNP SILICON POWER DARLINGTONS Original PDF
    BDV64B Central Semiconductor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - POWER TRANSISTOR PNP TO218 Original PDF
    BDV64B Motorola Complementary Silicon Plastic Power Darlingtons Original PDF
    BDV64B On Semiconductor BDV64 - TRANSISTOR 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218, PLASTIC, CASE 340D-02, 3 PIN, BIP General Purpose Power Original PDF
    BDV64B On Semiconductor TRANS DARLINGTON BJT PNP 100V 10A 3TO-218 Original PDF
    BDV64B On Semiconductor DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS Original PDF
    BDV64B Power Innovations PNP SILICON POWER DARLINGTONS Original PDF
    BDV64B Mospec POWER TRANSISTORS(12A,125W) Scan PDF
    BDV64B Motorola European Master Selection Guide 1986 Scan PDF
    BDV64B Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDV64B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDV64B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDV64B Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDV64B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDV64B Unknown Transistor Replacements Scan PDF
    BDV64B Unknown Cross Reference Datasheet Scan PDF
    BDV64B Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDV64B STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BDV64B Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDV64B Transys Electronics Darlington Bipolar Transistor, PNP, 100V at Tc=25C, TO-218, 3-Pin Scan PDF

    BDV64B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDV65

    Abstract: BDV65B BDV65A BDV65C BDV64 BDV64A BDV64B BDV64C
    Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE


    Original     		PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65B BDV65 BDV65B BDV65A BDV65C BDV64 BDV64A BDV64C

    BDV64B

    Abstract: BDV65B
    Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • w DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF BDV65B BDV64B BDV65B/D BDV64B BDV65B

    BDV64B

    Abstract: BDV65B bdv64b transistor
    Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF BDV65B BDV64B r14525 BDV65B/D BDV64B BDV65B bdv64b transistor

    tip142/TIP147 AMPLIFIER CIRCUIT

    Abstract: BDV65, BDV64 TIP36C to-247 BDW83C TIP147 tip147 data sheet TIP2955 TIP35C BDV65A BDV65B
    Text: Power Transistors TO-218 Case* Continued General Purpose Amplifier TYPE NO. IC PD (A) (W) BVCBO BVCEO hFE @ IC @ VCE VCE(SAT) @ IC (V) (V) MIN MIN MIN MAX 125 60 60 1,000 - 5.0 4.0 2.0 5.0 60* 12 125 80 80 1,000 - 5.0 4.0 2.0 5.0 60* BDV64B 12 125 100


    Original     		PDF O-218 BDV64B BDW84A BDV65 BDV64 BDV65A BDV64A BDV65B BDW83A BDW83B tip142/TIP147 AMPLIFIER CIRCUIT BDV65, BDV64 TIP36C to-247 BDW83C TIP147 tip147 data sheet TIP2955 TIP35C BDV65A BDV65B

    BDV64

    Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
    Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE


    Original     		PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65B BDV64 BDV64A BDV64C BDV65 BDV65A BDV65B BDV65C

    BDV65B

    Abstract: BDV65 bdv65a BDV64 BDV64A BDV64B BDV64C BDV65C
    Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● JUNE 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current


    Original     		PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65 BDV65B BDV65 bdv65a BDV64 BDV64A BDV64C BDV65C

    bdv64b

    Abstract: BDV64BG transistor packages sot93 BDV65B BDV65BG
    Text: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − HFE = 1000 (min.) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors


    Original     		PDF BDV65B BDV64B BDV65B/D BDV64BG transistor packages sot93 BDV65BG

    BDV64

    Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
    Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE


    Original     		PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64B BDV64 BDV64A BDV64B BDV64C BDV65 BDV65A BDV65C

    Motorola Power Transistor Data Book

    Abstract: Motorola Bipolar Power Transistor Data MOTOROLA TRANSISTOR T2 03 transistor BDV65B bipolar transistor Motorola 801 TRansistor L 701 power transistors 638 POWER TRANSISTOR MOTOROLA
    Text: MOTOROLA Order this document by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc


    Original     		PDF BDV65B/D BDV65B BDV64B BDV65B/D* Motorola Power Transistor Data Book Motorola Bipolar Power Transistor Data MOTOROLA TRANSISTOR T2 03 transistor BDV65B bipolar transistor Motorola 801 TRansistor L 701 power transistors 638 POWER TRANSISTOR MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature


    Original     		PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C BDV65 BDV65A

    BDV65B equivalent

    Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors


    Original     		PDF BDV65B BDV64B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BDV65B equivalent buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340

    tip142/TIP147 AMPLIFIER CIRCUIT

    Abstract: tip141 equivalent TIP35C EQUIVALENT BDV65, BDV64 BDV65 TIP35C BDV65A BDV65B BDW83A BDW83B
    Text: Power Transistors TO-218 Case* Continued General Purpose Amplifier TYPE NO. IC PD (A) (W) BVCBO BVCEO hFE @ IC @ VCE VCE(SAT) @ IC (V) (V) MIN MIN MIN MAX 125 60 60 1,000 - 5.0 4.0 2.0 5.0 60* 12 125 80 80 1,000 - 5.0 4.0 2.0 5.0 60* BDV64B 12 125 100


    Original     		PDF O-218 BDV64B BDW83A BDW84A BDW83B BDW84B BDW83C BDW84C TIP33A TIP34A tip142/TIP147 AMPLIFIER CIRCUIT tip141 equivalent TIP35C EQUIVALENT BDV65, BDV64 BDV65 TIP35C BDV65A BDV65B BDW83A BDW83B

    BDV64B

    Abstract: BDV65B bdv64b transistor
    Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF BDV65B BDV64B r14525 BDV65B/D BDV64B BDV65B bdv64b transistor

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF BDV65B BDV64B

    TIS140

    Abstract: No abstract text available
    Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE


    Original     		PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 TIS140

    BDV64B

    Abstract: MOTOROLA TRANSISTOR BDV65B bdv64b transistor
    Text: MOTOROLA Order this document by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc


    Original     		PDF BDV65B/D BDV65B BDV64B BDV65B/D* BDV64B MOTOROLA TRANSISTOR BDV65B bdv64b transistor

    motorola 572 transistor

    Abstract: MOTOROLA TRANSISTOR T2 transistors BDV64B MOTOROLA TRANSISTOR BDV64B BDV65B
    Text: MOTOROLA Order this document by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


    Original     		PDF BDV65B/D* BDV65B/D motorola 572 transistor MOTOROLA TRANSISTOR T2 transistors BDV64B MOTOROLA TRANSISTOR BDV64B BDV65B

    BDV64B

    Abstract: bdv64 Bdv64a
    Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current


    OCR Scan     		PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64B Bdv64a

    bdv64b transistor

    Abstract: ic 7493 BDV64 BDV64B transistors BDV64B BDV65 7Z77491
    Text: BDV64; 64A BDV64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n olithic D arlington circu it fo r audio o u tp u t stages and general a m p lifie r and switching applications. N-P-N complements are B D V 65, 65A, 65B and 65C.


    OCR Scan     		PDF BDV64; BDV64B; BDV65, BDV64 7Z9669S bdv64b transistor ic 7493 BDV64B transistors BDV64B BDV65 7Z77491

    tip142/TIP3055

    Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B BDW83A BDW83B BDW83C
    Text: Pow er Transistors TO-218Case* Continued General Purpose Amplifier TYPE NO. *C (A) Pd (W) BV c b o (V) @ lC @ V( je VCE(SA T) @ lc (MHz) (A) (V) (V) (A) h h FE BVCEO (V) *TYP NPN PNP BDV65 BDV64 12 BDV65A BDV64A 12 125 80 BDV65B BDV64B 12 125 BDW83A BDW84A


    OCR Scan     		PDF O-218 BDV65 BDV64 BDV65A BDV64A BDV65B BDV64B BDW83A BDW84A BDW83B tip142/TIP3055 BDW83C

    BDV65

    Abstract: bdv65b 8DV65C BOV65 BOV64A bdv65a
    Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright 1997, Power innovations Limited, UK • Designed or Complementary Use with BDV64, BOV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current •


    OCR Scan     		PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BOV64A, BDV64B BDV64C OT-93 BOV65 BDV65 bdv65b 8DV65C BOV64A bdv65a

    BDV65, BDV64

    Abstract: BOV65B transistor npn 3-326 transistors BDV65c BOV65 BDV65B-BOV64B bdv64b transistor Motorola 3-326 transistor transistor BDv65c 150EC
    Text: MOTORCLA SC XSTRS /R F 12E D | b3b7254 D 00‘47bcl 7 | NPN BDV65 BDV65A BDV65B BDV6SC MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP BDV64 BDV64A BDV64B BDV64C DARLING TO N S 10 AM PERES COMPLEMENTARY SILICON PLASTIC POWER DARLINGTONS COMPLEMENTARY SILICON POWER TRANSISTORS


    OCR Scan     		PDF b3b7254 T-33-tf T-33-U BDV65 BDV65A BDV65B BDV64 BDV64A BDV64B BDV64C BDV65, BDV64 BOV65B transistor npn 3-326 transistors BDV65c BOV65 BDV65B-BOV64B bdv64b transistor Motorola 3-326 transistor transistor BDv65c 150EC

    BDV65

    Abstract: BDV65B
    Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current


    OCR Scan     		PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65 BDV65B

    Y182

    Abstract: transistor K 1413 bdv64 transistors BDV64B BDV64B
    Text: i BDV64; 64A _ I l BDV64B; 64C PHILIPS INTERNATIONAL SbE D • 711DÖ2b 0D43342 3Tb ■ PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


    OCR Scan     		PDF BDV64; BDV64B; 0D43342 BDV64 -BDV64B: 711002b T-33-31 Y182 transistor K 1413 bdv64 transistors BDV64B BDV64B