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    BPW17 Search Results

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    BPW17 Price and Stock

    Vishay Semiconductors BPW17N

    PHOTOTRANSISTOR 450 TO 1040 NM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BPW17N Bulk 297 1
    • 1 $0.98
    • 10 $0.6
    • 100 $0.98
    • 1000 $0.30488
    • 10000 $0.25332
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    Curtis Industries CBPW-17

    CONN BARRIER STRP 17CIRC 0.375"
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    DigiKey CBPW-17 Bulk 200
    • 1 -
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    • 1000 $16.8064
    • 10000 $16.8064
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    Vishay Intertechnologies BPW17N

    Phototransistor Chip Silicon 825nm 2-Pin T-3/4 - Bulk (Alt: 78Y9449)
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    Avnet Americas BPW17N Bulk 14 Weeks 1
    • 1 $0.68
    • 10 $0.468
    • 100 $0.355
    • 1000 $0.355
    • 10000 $0.355
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    BPW17N Bulk 5,000
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    • 10000 $0.24513
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    BPW17N Bulk 10 Weeks, 1 Days 1
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    Mouser Electronics BPW17N 18,388
    • 1 $0.86
    • 10 $0.534
    • 100 $0.374
    • 1000 $0.29
    • 10000 $0.257
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    Verical BPW17N 14,942 31
    • 1 -
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    • 100 $0.3582
    • 1000 $0.2751
    • 10000 $0.2398
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    BPW17N 545 229
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    • 1000 $0.3309
    • 10000 $0.3309
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    Arrow Electronics BPW17N 14,968 6 Weeks 1
    • 1 $0.7786
    • 10 $0.5237
    • 100 $0.3482
    • 1000 $0.2674
    • 10000 $0.2331
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    Newark BPW17N Bulk 545 1
    • 1 $0.219
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    BPW17N Bulk 186 1
    • 1 $0.093
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    Bristol Electronics BPW17N 300
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    Quest Components BPW17N 240
    • 1 $0.7
    • 10 $0.7
    • 100 $0.42
    • 1000 $0.35
    • 10000 $0.35
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    TTI BPW17N Bulk 5,000 5,000
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    • 10000 $0.238
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    TME BPW17N 460 1
    • 1 $0.767
    • 10 $0.509
    • 100 $0.352
    • 1000 $0.265
    • 10000 $0.246
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    Component Electronics, Inc BPW17N 4
    • 1 $0.77
    • 10 $0.77
    • 100 $0.58
    • 1000 $0.5
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    EBV Elektronik BPW17N 7 Weeks 5,000
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    New Advantage Corporation BPW17N 1,000 1
    • 1 -
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    • 1000 $0.27
    • 10000 $0.27
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    Telefunken Microelectronics Gmbh BPW17N

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    Bristol Electronics BPW17N 557
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    Others BPW17

    AVAILABLE EU
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    ComSIT USA BPW17 7,000
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    Find more BPW17 price and stock on Findchips.com

    BPW17 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BPW17 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BPW17 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPW17 Philips Components Philips Data Book Scan Scan PDF
    BPW17 Telefunken Electronic Electronic Component Data Book 1976 Scan PDF
    BPW17 Telefunken Electronic Optoelectronic Device Data Book 1977 Scan PDF
    BPW17/9 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BPW17/9 Telefunken Electronic Electronic Component Data Book 1976 Scan PDF
    BPW17/9 Telefunken Electronic Optoelectronic Device Data Book 1977 Scan PDF
    BPW17N Vishay Intertechnology Silicon NPN Phototransistor Original PDF
    BPW17N Vishay Siliconix Silicon NPN Phototransistor Original PDF
    BPW17N Vishay Telefunken Phototransistor, 1nA Dark Current, 825nm Wavelength Original PDF
    BPW17N Philips Components Philips Data Book Scan Scan PDF
    BPW17N Telefunken Electronic Photo Detectors / Phototransistors / Photo Pin Diodes Scan PDF

    BPW17 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8239

    Abstract: BPW17 BPW17N CQY37N
    Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original     		PDF BPW17N BPW17N D-74025 20-May-99 8239 BPW17 CQY37N

    BPW17

    Abstract: CQY37 BPW17N
    Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		PDF BPW17N BPW17N CQY37N D-74025 08-Mar-05 BPW17 CQY37

    Untitled

    Abstract: No abstract text available
    Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		PDF BPW17N BPW17N CQY37N 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original     		PDF BPW17N BPW17N CQY37N D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW17N 2002/95/EC 2002/96/EC BPW17N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    BPW17N

    Abstract: No abstract text available
    Text: BPW17N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		PDF BPW17N BPW17N D-74025 26-Mar-04

    BPW17N

    Abstract: BPW17 CQY37N
    Text: BPW17N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable


    Original     		PDF BPW17N BPW17N CQY37N D-74025 15-Jul-96 BPW17 CQY37N

    BPW17N

    Abstract: CQY37N BPW17
    Text: CQY37N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical


    Original     		PDF CQY37N CQY37N BPW17N D-74025 15-Jul-96 BPW17

    BPW17N

    Abstract: CQY37N
    Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original     		PDF BPW17N BPW17N D-74025 20-May-99 CQY37N

    BPW17N application note

    Abstract: ic 8243 BPW17N
    Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW17N 2002/95/EC 2002/96/EC BPW17N 11-Mar-11 BPW17N application note ic 8243

    Untitled

    Abstract: No abstract text available
    Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW17N 2002/95/EC 2002/96/EC BPW17N 11-Mar-11

    BPW17

    Abstract: BPW17N CQY37N
    Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		PDF BPW17N BPW17N 08-Apr-05 BPW17 CQY37N

    npn phototransistor

    Abstract: BPW17N BPW17 BPW17N application note 8239
    Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW17N 2002/95/EC 2002/96/EC BPW17N 18-Jul-08 npn phototransistor BPW17 BPW17N application note 8239

    BPW17

    Abstract: ic 8243 BPW17N CQY37N infrared 950nm
    Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original     		PDF BPW17N BPW17N D-74025 20-May-99 BPW17 ic 8243 CQY37N infrared 950nm

    Untitled

    Abstract: No abstract text available
    Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW17N 2002/95/EC 2002/96/EC BPW17N 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    12109

    Abstract: No abstract text available
    Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 12° • Low forward voltage


    Original     		PDF CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 950trademarks 2011/65/EU 2002/95/EC. 12109

    Untitled

    Abstract: No abstract text available
    Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N D-74025 20-May-99

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


    Original     		PDF 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3

    packaging

    Abstract: No abstract text available
    Text: Packaging and Order Information www.vishay.com Vishay Semiconductors Packaging and Order Information PACKAGING SURVEY RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the dry bag has been opened to prevent moisture absorption. TABLE 1 - PACKAGING OPTIONS OF


    Original     		PDF TEKS5400S TEKT5400S TSKS5400S BP104 BPW34 BP104S BPW34S BP104S 02-Mar-15 packaging

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BPW17

    Abstract: No abstract text available
    Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 0O TO TpaH3M CTO pbl Kofl: flrrnHaBoriHbi b TO H Ke MaKC. electronics 495 739-09-95, 644-41-29 BPW17 yron o63opa UCE0 MyBCTBHTenbHOCTb (UCE= 5B , X = 950 h m ) TnnrmH3bi 1 m A @ 1 m B t/cm 2 6ecqB eTH aa H yB C T B H T. X max


    OCR Scan     		PDF BPW17 o63opa BPW17

    Untitled

    Abstract: No abstract text available
    Text: Temic BPW17N Semiconductors Silicon NPN Phototransistor Description BPW 17N is a silicon NPN epitaxial planar phototransis­ tor in a miniature plastic case with a + 12‘ lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable


    OCR Scan     		PDF BPW17N I5-Jut-96 15-Jul

    TFK 148

    Abstract: TFK BPW 20 TFK 149 bpw 148 7314 bpw 50 montage BPW 50 BPW17 BPW16 TFK bpw
    Text: BPW 16 • BPW17 Silizium-NPN-Epitaxial-Planar-Fototransistoren Silicon NPN Epitaxial Planar Phototransistors Anwendung: Empfänger in elektronischen Steuer- und Regeleinrichtungen Application: D etector in electronic control and drive circuits Features: Besondere Merkmale:


    OCR Scan     		PDF BPW16 BPW17 TFK 148 TFK BPW 20 TFK 149 bpw 148 7314 bpw 50 montage BPW 50 BPW17 BPW16 TFK bpw

    BPW85C

    Abstract: No abstract text available
    Text: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package


    OCR Scan     		PDF BPW16N BPW17N BPW85A BPW85B BPW85C BPW96A BPW96B BPW96C BPV11 TEMT2100