BUV27AF
Abstract: BUV27F
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV27F/AF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 120V(Min)- BUV27F 150V(Min)- BUV27AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high
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BUV27F/AF
BUV27F
BUV27AF
IB27AF
BUV27AF
BUV27F
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BUV27A
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification BUV27A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・For use in high frequency and efficiency converters,switching regulators and motor
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BUV27A
O-220C
BUV27A
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BUV27A
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BUV27A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor
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BUV27A
O-220C
BUV27A
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BUV27A
Abstract: IC-35 pt240 BUV27
Text: SEMICONDUCTORS BUV27 – BUV27A SILICON POWER TRANSISTORS High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS
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BUV27
BUV27A
O-220
BUV27A
IC-35
pt240
BUV27
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2SA914
O-126
2SA900
2SC2556
2SC2556A
LM317K
O-220
LM317T
THINKI transistor catalog
audio amplifier ic
bd249c catalog
AUDIO HIGH POWER AMPLIFIER
3DD301
2sc3229
2SA747
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D0310
Abstract: BUV27AF BUV27F L100 A10q 27af
Text: _ 711QäBfci liU □ Cb D0310ñS T D P H I N I I PHILIPS INTERNATIONAL MSE ]> O BUV27F BUV27AF J l T -3 3 -0 7 SILICON DIFFUSED POWER TRANSISTORS H igh-voltage, high-speed, glass-passivated npn p o w er transistor in a S O T 1 8 6 envelope w ith electrically
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D0310flS
BUV27F
BUV27AF
OT186
T-33-07
7z94453
D0310
BUV27AF
L100
A10q
27af
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BUV27
Abstract: BUV27A
Text: PHILIPS INTERNATIONAL MSE D E3 711002b 00310Ô1 5 E3PHIN BUV27 BUV27A 7^ 337/ SILICON POWER TRANSISTO RS High-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control.
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T0-220
buv27
O-220AB,
BUV27A
7110flEb
0031Gfl4
7Z62310
7Z77499
BUV27A
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BUV27
Abstract: BUV27A
Text: N AMER PHILIPS/DISCRETE b<?E D • bb53^31 GG 2ô 4b G 24ô BUV27 BUV27A SILICON POWER TRANSISTORS High-speed, glass-passivated npn p ow er transistors in a T 0 -2 2 0 envelope intended fo r fast sw itching applications such as high frequency and e fficie n cy converters, sw itching regulators and m o to r c o n tro l.
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BUV27
BUV27A
T0-220
O-220AB.
BUV27A
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V27AF
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL mse: » 7 iiQasb 0031005 t b IPHIN BUV27F BUV27AF o SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control
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BUV27F
BUV27AF
OT186
OT186.
711GflBh
0G310TD
T-33-07
V27AF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 D02fl4b4 TT3 I IAPX BUV27F BUV27AF b'lE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control
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D02fl4b4
BUV27F
BUV27AF
OT186
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Untitled
Abstract: No abstract text available
Text: N A PIER PHILIPS/DISCRETE APX bbS3T31 OOEfiMbQ E4fl b^E d BUV27 BUV27A SILICON POWER TRANSISTORS High-speed, glass-passivated npn power transistors in a TO-220 envelope intended fo r fast switching applications such as high frequency and efficiency converters, switching regulators and m otor control.
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bbS3T31
BUV27
BUV27A
O-220
Csat/10;
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z9s21
Abstract: BUV27AF BUV27F 27af BU100
Text: N AMER PHILIPS/DISCRETE bTE » • bbSB^l DD2flMbM ‘ì'ìa HIAPX BUV27F BUV27AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistor in a S O T 1 8 6 envelope w ith electrically isolated m ounting base, intended fo r use in converters, inverters, switching regulators, m o to r control
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bb53131
BUV27F
BUV27AF
OT186
BUV27F
z9s21
BUV27AF
27af
BU100
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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BA220
BA221
BA223
BA281
BA314
BA315
BA316
BA317
BA318
BA423
FET BFW10
KP101A
FET BFW11
BDX38
KPZ20G
CQY58A
BFW10 FET
RPW100
B0943
OF FET BFW11
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbS3131
BLU52
1N321
BYW56
1N321A
BLV97
1N322
TXD10K40
TXD10K60
BT1690
BT808
1N5004
TXD10H60
mp8706
TXC10K40
BSTC1026
BT13G
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