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    HeliCoil 3591-5CNY312

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    HeliCoil 1191-5CNY312

    INS H-C 516-24UNF FR CIN27
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    CNY31 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CNY31 General Electric Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-darlington amplifier. Scan PDF
    CNY31 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF

    CNY31 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    p421 coupler

    Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
    Text: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety


    Original     		TLP227GA TLP227G TLP227GA TLP227G/TLP597GA/TLP227GA-2 p421 coupler MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note PDF

    CNY31

    Abstract: No abstract text available
    Text: E SOLID. STATE Dl De | 3075DÔ1 001^334 fl | Optoelectronic Specifications Photon Coupled Isolator CNY31 Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State CNY31 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-darlington amplifier in a low-cost


    OCR Scan     		--m-95 CNY31 CNY31 67mW/Â PDF

    Untitled

    Abstract: No abstract text available
    Text: flUALITY T E C H N O L O G I E S CORP S7E ]> O O O ^ Q ij 7 fl3 I ÖTY European “Pro Electron” Registered T y p e s - CNY31 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier T h e CNY31 is a g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e


    OCR Scan     		CNY31 CNY31 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLID STATE 0 1E 19834 D Optoelectronic Specifications _ HA R R I S S Ef l l COND S E C T OR 43G2271 37E DDSTSTh I HAS Photon Coupled Isolator CNY31 Ga As Infrared E m ittin g D iode & NPN Silicon P h oto-D arlington A m plifier T he G E Solid S tate CNY31 is a gallium arsenide, infrared em itting


    OCR Scan     		43G2271 CNY31 CNY31 92CS-42662 92CS-428S1 PDF

    Untitled

    Abstract: No abstract text available
    Text: European “Pro Electron” Registered T y p e s _ CNY31 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T h e CNY31 is a gallium arsenide, in fra re d em itting diode co u p led with a silicon pho to -D arlin g to n am plifier in a lowcost plastic package with lead spacing com patible to a dual


    OCR Scan     		CNY31 CNY31 PDF

    Untitled

    Abstract: No abstract text available
    Text: European “Pro Electron" Registered Types CNY31 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T h e CNY31 is a g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e c o u p le d w ith a silic o n p h o to -D a rlin g to n a m p lifie r in a low c o st p la stic p a c k a g e w ith le a d s p a c in g c o m p a tib le to a d u a l


    OCR Scan     		CNY31 CNY31 500VDC) PDF

    M0C3022

    Abstract: M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482
    Text: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS TYPE NO. y & 54A S Ä j f # / 54 / JV V / jL & s /s s /^ s ^ 1 N 6 26 4 1N 6 26 S 1 N6266 CQ X 1 4 CQ X1 5 CQX16 CQ X1 7 FSD1 FSD 2 FSD3 F5E1 FSE2 F5E3 F5F1 F5G1 IE D 5 5 C L ED S5 B LED56 L ED SSC F


    OCR Scan     		N6266 CQX16 LED56 LED56F H23A1 H23A2 H23B1 H23L1 M0C3022 M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482 PDF

    MOC5010

    Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
    Text: - Quick-Reference Product Guide Industry Replacement Guide T h e su g g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts f o r th e p ro d u c ts listed. H a rris a ssu m e s n o re sp o n sibility a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t


    OCR Scan     		1N6264 1N6265 1N6266 4N25A 4N29A 4N32A 4N38A L14C2 MOC5010 MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143 PDF

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12 PDF

    TLP181 equivalent

    Abstract: NEC ps2401 TLP3022 equivalent TLP541G "cross-reference" s13md1 sharp TLP3061 equivalent TLP560J "cross-reference" PC357 "cross-reference" TLP734 equivalent pc716 sharp
    Text: 10. Cross Reference Code Definitions A : D irect R eplacem ent B : M inor Electrical Difference C : M inor M echanical Difference D : M ajo r Electrical Difference E : M ajo r M echanical D ifference F : Call T O S H IB A * G : No Equivalent The fo llo w in g Cross-Reference is m eant to


    OCR Scan     		SIEMEN27 PC4N28 PC4N29 PC4N30 PC4N32 PC4N33 PC4N35 PC4N36 PC4N37 PC110 TLP181 equivalent NEC ps2401 TLP3022 equivalent TLP541G "cross-reference" s13md1 sharp TLP3061 equivalent TLP560J "cross-reference" PC357 "cross-reference" TLP734 equivalent pc716 sharp PDF

    H11V3

    Abstract: H11V1
    Text: _ TH OM SO N/ DISTRIBUTOR SñE D • T0Ebfl73 O n D S ? 4 ci ■ TCSK O ptoelectronic Products O ptoisolators/O ptocouplers Continued Description S u rg e Isolation Voltage R M S Min H11B1 Photo 4 000V 500% H 11B2 Darlington 4000V 200% H 1 1B 3 Output


    OCR Scan     		T0Ebfl73 H11B1 H11B2 H11B3 H11B255 H24B1 H24B2 4N29A 4N32A MCA231 H11V3 H11V1 PDF

    M0C3011

    Abstract: H74AI h11m BPW3 H1IJ H11M4 photo darlington L14F2 HIIAAI M0C3010 MC726
    Text: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS j ß /> * ff /' //* * ,y / TYPE NO. PAGE NO. MIN. PQ @ lF = 100mA MAX. VF@ lp= 100«iA PEAK EMISSION WAVELENGTH TYP. n METERS RISE TIME TYP. mSEC FALL TIME TYP./zSEC MAX. PD mW MAX. If CONT.


    OCR Scan     		100mA 25mW/sr 28mW/sr H21L1 H21L2 H22L1 H22L2 H23A2 H23B1 H23L1 M0C3011 H74AI h11m BPW3 H1IJ H11M4 photo darlington L14F2 HIIAAI M0C3010 MC726 PDF

    MOC3Q11

    Abstract: h11m qx14 21B6 LED55C H11M1 22b4 22L2 NY33 H11M4
    Text: Quick-Reference Product Guide HARRIS OPTOELECTRONIC Devices Index to Types Type No. ' 4 Page No. Type No. Page No. IN6264 IN6265 IN 6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196 196 196 198 198 F5F1 F5G1 GE3009 GE3010 GE3011 GE3Ô12 GE3020


    OCR Scan     		IN6264 IN6265 4N25A 4N29A 4N32A BPW37 BPW38 CNX35 CNY28 CNY30 MOC3Q11 h11m qx14 21B6 LED55C H11M1 22b4 22L2 NY33 H11M4 PDF

    CNY17 III

    Abstract: H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
    Text: Quick-Reference Product Guide _ HARRIS OPTOELECTRONIC Devices Index to Types Type No. 4 Page No. Type No. Page No. Type No. Page No. Type No. Page No. IN6264 IN6265 IN6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196


    OCR Scan     		IN6264 IN6265 IN6266 4N25A 4N29A 4N32A 4N38A BPW36 BPW37 BPW38 CNY17 III H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47 PDF

    KT853

    Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
    Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN


    OCR Scan     		1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B PDF

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 PDF