DD17T Search Results

transistor 17609

Contextual Info: G E SO LI D 3 Ô 7 5 08 1 STATE G E S O L I D ST AT E QÏ E~ 3fl7SDfll DD17t,Dfl □ 0 1E 17608" " D T • Si - I S' _ Pro Electron Power Transistors File N um ber 1172 Silicon N-P-N Switching Transistor BUX21 TERM INAL DESIGNATIONS For Switching Applications in

Am29854

Abstract: am29853
Contextual Info: 'ADVANCED MICRO DEVICES b4 []E57S2S DD17t,D4 64C .17604 Am29833-34/Am29853-54 Ö 2 5 7 5 2 5 ADVANCED.MICRO D E V I C E S D T - ^ S 'Z l Am29833-34/Am29853-54 Parity Bus, Transceivers PRELIMINARY DISTINCTIVE CHARACTERISTICS High-speed bidirectional bus transceiver for processor

ta7781

Abstract: F16GA2-P TA7781P XCS TE 3D16A TA7781F sumida ift coil
Contextual Info: MAILILIUMMilUVJUiiJJÜMUÜliLnM TOSHIBA-, ELECTRONIC GS PE^| TDcì7a47 DD17tlb b 1.5V FM/AM IF SYSTEM f Unit in mm Including Earphone Driver TA7781P 16 The TA7781P/F are EM/AM IF system XCs designed for low voltage operation(l.5V), which are especially suitable

BFG90A

Abstract: BFG51 Q017b BFG90 SOT-103 SOT103 transistor BT 136
Contextual Info: N AMER PHILIPS/DISCRETE 25 E bt.53131 Q Q 1 7 t 7 Î D Q • BFG51 T *- 31- I S~ P-N-P 2 GHz W IDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in C A T V and M A T V systems, up to 2 GHz.

MSM5117180-70

Abstract: MSM5117180-80
Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.

GES2218

Abstract: GES2218A GES2219 GES2219A GHS2218
Contextual Info: G E SOLI» STATE DÏ DÊj| 3ä7SDfll 0017TbD 3 3875081 G Ë SOLID STATE uit uyeu r - j r - li Signal Transistors- GES2218A, 19A, GES2218,19

Contextual Info: u v m L T C 1 5 3 8 -A U X / L T C 1539 . TECHNOLOGY D ual High Efficiency, Low Noise, Synchronous Step-Down S w itching R eg ulators F€ATUft€S D C S C R IP T IO n • M aintains Constant Frequency at Lo w Output Currents ■ Dual N-Channel M O S F E T Synchronous Drive

Contextual Info: Thal H e w lett WilEM P A C K A R D - Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41435 F eatures • Low N oise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High A ssociated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz

TC9312N

Abstract: GE DC 300 ADJUSTABLE SPEED DRIVE FK60 TA7780BN
Contextual Info: TOSHIBA-, 9097247 TOSHIBA. E L E C T R O N I C 05 i>Ë| ciOci7 2 W 7 D D 1 7 bül 4 | ~ ELECTRONIC 02E 17 6 01 TA7780BN MECHANISM DRIVER FOR IC LOGIC CONTROL Unit in mm The TA7780BN is a mechanism driver IC designed for XC logic control, which is especially suitable for

Contextual Info: Optical disc ICs 4-channel PWM driver for CD and MD players BH6510FS The BH6S10FS is a 4-channel PWM driver for CD and MD player motors and actuators. The power M OSFET in the output stage assures low power consumption for applications. •A pplications CD and MD players

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E D m 7 T b 4 m 2 D017bMfl 7^5 KM641001 CMOS SRAM 2 5 6 K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 1 7 ,2 0 ,2 5 ,30ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.)

Contextual Info: DS1689/D S1693 DS1 6 8 9 /DS1 6 9 3 3 Volt/5 Volt Serialized Real Time Clock with NV RAM Control DALLAS SEMICONDUCTOR FEATURES PIN ASSIGNMENT Incorporates industry standard DS1287 PC clock plus enhanced features: • +3 or +5 volt operation • 64-bit Silicon serial number

2454D

Abstract: 2DQ11 2M54G
Contextual Info: O K I Semiconductor MSM5117180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.

Contextual Info: Optical disc ICs 4-channel PWM driver for CD and MD players BH6511FS The BH6511FS is an IC designed for CD and MD player motors and actuators, and has an internal 4-channel PWM driver, and a charge pump circuit that supplies the gate drive for the output stage power MOSFET. The power MOSFET In the output stage assures low power consumption for applications.

JRC GPS 112

Abstract: jrc 082 ELLS 110 intel embedded microcontroller handbook JRC GPS SAB 8259 16C550 82077AA FDC37B72X NS16C550
Contextual Info: FDC37B72X S i l i c e STANDARD MICROSYSTEMS CORPORATION 128 Pin Enhanced Super I/O With ACPI Support FEATURES 5V Operation PC98, PC99 Compliant Battery Back-up for Wake-Events ISA Plug-and-Play Compatible Register Set - 12 IRQ Options - 15 Serial IRQ Options

Contextual Info: WhoI H E W L E T T wLUM P A C K A R D ATM M ultim ode Fiber T V ii n w i 'P i v P i 'G for SONET OC-3/SDH STM-1 in Low C ost 1x9 Package Style Technical Data Features • Full Compliance w ith ATM Forum UNI SONET OC-3 M ultimode Fiber Physical Layer Specification

Contextual Info: ,tJINY CXP818P48A CMOS 8-bit Single Chip Microcomputer Description The CXP818P48A is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface, timer/counter, time base timer, vector interruption, high precision timing pattern generation circuit, PWM

Contextual Info: Ordering number : EN5082A CMOS LSI LC321664BJ, BM, BT-70/80 No. 5082A SA\YO 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Overview Package Dimensions The LC321664BJ, BM, BT is a CMOS dynamic RAM operating on a single 5 V power source and having a

phase controller L120

Abstract: bitch 28F008SA
Contextual Info: SHARP PRODUCT PREVIEW LH28F004SCH-L 4-MBIT 512 KB X 8 SmartVoltage Flash MEMORY SmartVoltage Technology — 2.7V(Read-Only), 3.3V or 5V VCc — 3.3V, 5V or 12V VPP • SRAM-Compatibte Write Interface ■ Hlgh-Density Symmetrically-Blocked Architecture — eight 64-Kbyte Erasable Blocks

BUY69A

Abstract: RCA-BUY69 BUY69 BUY69B BUY69C SOLID STATE TRANSISTORS C633H
Contextual Info: E SOLID STATE" ~0l 3875081 G E SOLID STATE 5T~|3fl750fll D017faBfi fa J - 01E 17628 D Y -Ï3-C Z Pro Electron Power Transistors File Num ber 1237 BUY69A, BUY69B, BUY69C H ig h V o lta g e S ilic o n N - P - N * P o w e r T ra n s is to rs terminal designations

DD3150

Contextual Info: • O N Y I C X P 8 1 9 5 2 / 8 1 9 6 CMOS 8-bit Single Chip Microcomputer Description The CXP81952/81960 is a CMOS 8-bit micro­ computer which consists of A/D converter, serial interface, timer/counter, time base timer, vector interruption, high precision timing pattern generation

sgsp365

Abstract: sp365 SGSP465 p466 sgsp466 SGSP464 sgsp564 S 566 b P565 SGSP566
Contextual Info: S 6 S-THOHSON 0 7 E ' •• : - , SGSP364/P365/P366 SGSP464/P465/P466 ; . SG SP 56 4 /P 56 5 /P 5 6 6 73C D | 17395 HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V ds •d l m • Ptot Tstg Tj (•) Pulse w idth lim ited b y safe operating area

20-PIN

Abstract: 26-PIN ZIP20-P-400-W1
Contextual Info: O K I Sem iconductor MSM5 14 4 0 0 A/AL 1,048,576-W ord x 4 -B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION c v -siu v iu s silicon gate proce The device operates at a single 5V power supply. Its I/O pins are TTL compatible. FEATURES

Contextual Info: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L Integrated Device Technology, Inc. FEATURES: • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Devices are capable of withstanding greater than 2001V electrostatic charge.