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    FQA11N90 Price and Stock

    onsemi FQA11N90

    MOSFET N-CH 900V 11.4A TO3P
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    onsemi FQA11N90C

    MOSFET N-CH 900V 11A TO3P
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    DigiKey FQA11N90C Tube 450
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    onsemi FQA11N90-F109

    MOSFET N-CH 900V 11.4A TO3PN
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    Mouser Electronics FQA11N90-F109
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    Avnet Silica FQA11N90-F109 17 Weeks 900
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    onsemi FQA11N90C-F109

    MOSFET N-CH 900V 11A TO3P
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    Flip Electronics FQA11N90C-F109 1,800
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    onsemi FQA11N90C_F109

    Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA11N90C-F109)
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    Avnet Americas FQA11N90C_F109 Tube 0 Weeks, 2 Days 178
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    FQA11N90 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQA11N90 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90C Fairchild Semiconductor 900V N-Channel Advanced QFET C-Series Original PDF
    FQA11N90C Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90C Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90C Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90C_F109 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90C-F109 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 900V 11A TO-3P Original PDF
    FQA11N90_F109 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 11.4A TO-3P Original PDF
    FQA11N90_F109 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90-F109 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 900V 11.4A TO-3P Original PDF

    FQA11N90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11.0 A, 1.1 Ω Features Description • 11 A, 900 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 60 nC) produced using Fairchild Semiconductor’s proprietary planar


    Original     		PDF FQA11N90C

    Untitled

    Abstract: No abstract text available
    Text: FQA11N90_F109 N-Channel QFET MOSFET 900 V, 11.4 A, 960 mΩ Features Description • 11.4 A, 900 V, RDS on = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 72 nC) stripe and DMOS technology. This advanced MOSFET


    Original     		PDF FQA11N90

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA11N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C

    F109

    Abstract: FQA11N90C FQA11N90C_F109
    Text: QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C F109 FQA11N90C_F109

    Untitled

    Abstract: No abstract text available
    Text: FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11.0 A, 1.1 Ω Features Description • 11 A, 900 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe


    Original     		PDF FQA11N90C

    FQA11N90C

    Abstract: F109 FQA11N90C_F109
    Text: QFET FQA11N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C FQA11N90C F109 FQA11N90C_F109

    Untitled

    Abstract: No abstract text available
    Text: FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11 A, 1.1 Ω Features Description • 11 A, 900 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar


    Original     		PDF FQA11N90C

    FQA11N90

    Abstract: FQA11N90_F109 F109
    Text: QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90 FQA11N90_F109 F109

    Untitled

    Abstract: No abstract text available
    Text: FQA11N90 / FQA11N90_F109 N-Channel QFET MOSFET 900 V, 11.4 A, 960 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQA11N90

    FQA11N90C

    Abstract: No abstract text available
    Text: FQA11N90C FQA11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C FQA11N90C

    F109

    Abstract: FQA11N90
    Text: QFET FQA11N90 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90 FQA11N90 F109

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90

    FQA11N90

    Abstract: No abstract text available
    Text: FQA11N90 September 2000 QFET TM FQA11N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90 FQA11N90

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    FQA90N08

    Abstract: FQA38N30 FQA9N90 equivalent sfh154 FQA85N06 FQA170N06 IRFP150A FQA140N10 FQA160N08 FQA58N08
    Text: Discrete MOSFETs TO-3P RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-3P N-Channel FQA170N06 60 Single 0.0056 - - - 220 170 375 FQA85N06 60 Single 0.01 - - - 86 100 214


    Original     		PDF FQA170N06 FQA85N06 FQA65N06 FQA160N08 FQA90N08 FQA70N08 FQA58N08 FQA44N08 SFH9240 SFH9250L FQA90N08 FQA38N30 FQA9N90 equivalent sfh154 FQA85N06 FQA170N06 IRFP150A FQA140N10 FQA160N08 FQA58N08

    ka3525 12v to 230v inverters circuit diagrams

    Abstract: smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram
    Text: AC/DC Switch Mode Power Supply Design Guide www.fairchildsemi.com AC/DC Switch Mode Power Supply Design Guide Table Of Contents Product Information Total


    Original     		PDF Power247TM, ka3525 12v to 230v inverters circuit diagrams smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    fairchild mosfet selection guide

    Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
    Text: Q-FETTM Line Card Fairchild Power MOSFETs QFETTM Line Card Overview Fairchild Semiconductor, a leading innovator in the design and manufacture of high-performance semiconductors, introduces QFETTM, an advanced technology for power MOSFETs. QFETTM Optoelectronics


    Original     		PDF Power247TM, fairchild mosfet selection guide FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60