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    FQD3N60CTM Search Results

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    FQD3N60CTM Price and Stock

    onsemi FQD3N60CTM-WS

    MOSFET N-CH 600V 2.4A DPAK
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    DigiKey FQD3N60CTM-WS Reel
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    FQD3N60CTM-WS Digi-Reel 1
    • 1 $1.19
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    • 100 $1.19
    • 1000 $1.19
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    FQD3N60CTM-WS Cut Tape
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    Newark FQD3N60CTM-WS Cut Tape 1
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    TME FQD3N60CTM-WS 1
    • 1 $0.975
    • 10 $0.759
    • 100 $0.603
    • 1000 $0.506
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    onsemi FQD3N60CTM_WS

    600V, 2.4A, Nch, Mosfet Qfet/Tape Reel |Onsemi FQD3N60CTM_WS
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    Newark FQD3N60CTM_WS Reel 2,500
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    Fairchild Semiconductor Corporation FQD3N60CTM

    FQD3N60 - 2.4A, 600V, 3.4ohm, N-Channel Power MOSFET, TO-252 '
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    Rochester Electronics FQD3N60CTM 155 1
    • 1 $0.325
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    • 100 $0.3055
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    onsemi FQD3N60CTMWS

    N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 2.4A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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    ComSIT USA FQD3N60CTMWS 13,780
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    FQD3N60CTM Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQD3N60CTM Fairchild Semiconductor 600V N-Channel MOSFET Original PDF
    FQD3N60CTM_WS Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 2.4A DPAK Original PDF
    FQD3N60CTM-WS ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 2.4A DPAK Original PDF

    FQD3N60CTM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQD3N60CTM_WS N-Channel QFET MOSFET 600 V, 2.4 A, 3.4 Ω Features Description • 2.4 A, 600 V, RDS on = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.2 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced


    Original
    PDF FQD3N60CTM

    Untitled

    Abstract: No abstract text available
    Text: FQD3N60C / FQU3N60C N-Channel QFET MOSFET 600 V, 2.4 A, 3.4 Ω Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original
    PDF FQD3N60C FQU3N60C FQU3N60C

    FQD3N60C

    Abstract: FQD3N60CTF FQD3N60CTM
    Text: TM QFET FQD3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQD3N60C FQD3N60C FQD3N60CTF FQD3N60CTM

    MC0628R

    Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
    Text: Discontinued Product s 4296_ST42091 5092_F50188E 5FS1_NB5F009 73282 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW 74ACT151SJ 74ACT16646SSC 74ACTQ08SJX Replacement Product(s) NONE NONE FDS3580 None 74ABT646ADB 74ABT646ADB


    Original
    PDF ST42091 F50188E NB5F009 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW MC0628R mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884

    MC0628R

    Abstract: 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE
    Text: R E L I A B L E . L O G I C . I N N O V A T I O N . Logic Cross-Reference Logic Cross-Reference 2003 Texas Instruments Printed in the U.S.A. by Texoma Business Forms, Durant, Oklahoma Printed on recycled paper. SCYB017A NEW First Revision Logic Cross-Reference


    Original
    PDF SCYB017A T74ALVC32374 74CBTLV16211 SN74CBTD16211 SN74SSTV16859 SN74CBTLV16211GRDR SN74ALVC16245AGRDR -SN74SSTV16859GKER MC0628R 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE

    RG 2006 10A 600V

    Abstract: FQU3N60C FQU3N60CTU FQD3N60C FQD3N60CTF FQD3N60CTM
    Text: QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    PDF FQD3N60C FQU3N60C FQU3N60C RG 2006 10A 600V FQU3N60CTU FQD3N60CTF FQD3N60CTM