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    H11D4 Search Results

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    H11D4 Price and Stock

    Isocom Components H11D4X

    6PIN TRANSISTOR DETECTOR, SINGLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11D4X Tube 65 1
    • 1 $1.42
    • 10 $0.873
    • 100 $1.42
    • 1000 $0.43398
    • 10000 $0.32333
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    TME H11D4X 1
    • 1 $1.11
    • 10 $0.79
    • 100 $0.494
    • 1000 $0.37
    • 10000 $0.321
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    NAC H11D4X Tube 1,040
    • 1 $0.456
    • 10 $0.456
    • 100 $0.456
    • 1000 $0.3312
    • 10000 $0.3072
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    Isocom Components H11D4XG

    6PIN TRANSISTOR DETECTOR, SINGLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11D4XG Tube 65 1
    • 1 $1.51
    • 10 $0.925
    • 100 $1.51
    • 1000 $0.4625
    • 10000 $0.34599
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    TME H11D4XG 1
    • 1 $1.2
    • 10 $0.856
    • 100 $0.535
    • 1000 $0.401
    • 10000 $0.348
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    NAC H11D4XG Tube 1,040
    • 1 $0.494
    • 10 $0.494
    • 100 $0.494
    • 1000 $0.3588
    • 10000 $0.3328
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    Isocom Components H11D4XSM

    6PIN TRANSISTOR DETECTOR, SINGLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11D4XSM Tube 65 1
    • 1 $1.51
    • 10 $0.925
    • 100 $1.51
    • 1000 $0.4625
    • 10000 $0.34599
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    TME H11D4XSM 1
    • 1 $1.2
    • 10 $0.856
    • 100 $0.535
    • 1000 $0.401
    • 10000 $0.348
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    NAC H11D4XSM Tube 1,300
    • 1 $0.494
    • 10 $0.494
    • 100 $0.494
    • 1000 $0.3588
    • 10000 $0.3328
    Buy Now

    onsemi H11D4

    OPTOISO 5.3KV TRANS W/BASE 6DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11D4 Tube
    • 1 -
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    Isocom Components H11D4

    6PIN TRANSISTOR DETECTOR, SINGLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11D4 Tube 1,040
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.3931
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    Future Electronics H11D4 Tube 4,225
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.312
    Buy Now
    TME H11D4 1
    • 1 $1.11
    • 10 $0.79
    • 100 $0.494
    • 1000 $0.37
    • 10000 $0.321
    Get Quote
    NAC H11D4 Tube 1,040
    • 1 $0.456
    • 10 $0.456
    • 100 $0.456
    • 1000 $0.3312
    • 10000 $0.3072
    Buy Now

    H11D4 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H11D4 Fairchild Semiconductor High Voltage Phototransistor Optocoupler Original PDF
    H11D4 Fairchild Semiconductor Optoisolators - Transistor, Photovoltaic Output, Isolators, OPTOISO 5.3KV TRANS W/BASE 6DIP Original PDF
    H11D4 Infineon Technologies OptoCoupler, Phototransistor, 5.3 KV, TRIOS Optocoupler Original PDF
    H11D4 Infineon Technologies Optocoupler, 6 Pin, Sngl, 20% CTR, High Reverse Voltage Original PDF
    H11D4 Infineon Technologies Phototransistor, 5.3 KV, TRIOS High BV CER Voltage Optocoupler Original PDF
    H11D4 Isocom Components 6V, 60mA high voltage optically coupled isolated phototransistor output Original PDF
    H11D4 Vishay Siliconix Optocouplers Original PDF
    H11D4 Fairchild Semiconductor Optoelectronics Data Book 1980 Scan PDF
    H11D4 Fairchild Semiconductor Optoelectronics Data Book 1979 Scan PDF
    H11D4 General Electric Semiconductor Data Handbook 1977 Scan PDF
    H11D4 Isocom Components Optoelectronics Data Book 1996 Scan PDF
    H11D4 Motorola Switchmode Datasheet Scan PDF
    H11D4 Motorola European Master Selection Guide 1986 Scan PDF
    H11D4 Motorola Optoelectronics Device Data 1988 Scan PDF
    H11D4 Unknown Interface IC/Device Data Book (Japanese) Scan PDF
    H11D40.3 Fairchild Semiconductor OptoCoupler, HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS Original PDF
    H11D40.300 Fairchild Semiconductor Phototransistor, HIGHVAGE PHOTOTRANSISTOR OPTOCOUPLERS Original PDF
    H11D4300 Fairchild Semiconductor 6-pin DIP High Voltage Phototransistor Output Optocoupler Original PDF
    H11D4300 Fairchild Semiconductor HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLER Original PDF
    H11D4.300W Fairchild Semiconductor Phototransistor, HIGHVAGE PHOTOTRANSISTOR OPTOCOUPLERS Original PDF

    H11D4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    H11DX

    Abstract: H11D1 4N38 H11D2 H11D3 H11D4
    Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


    Original
    H11D1 H11D2 H11D3 H11D4 H11DX H11D1, H11D2, H11D3, H11D4, E90700 H11D1 4N38 H11D2 H11D3 H11D4 PDF

    H11D1

    Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
    Text: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 6 1 2 5


    Original
    H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 DB91077m-AAS/A1 H11D1 H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X PDF

    H11D1-X007

    Abstract: H11D1 H11D2 H11D3 H11D4
    Text: H11D1/ H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current Low CTR Degradation


    Original
    H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC UL1577, E52744 H11D1-X007 H11D1 H11D2 H11D3 H11D4 PDF

    H11D2

    Abstract: H11D1-X007
    Text: H11D1/ H11D2/ H11D3/ H11D4 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current


    Original
    H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, i179004 E52744 VDE0884) IEC60950 H11D2 H11D1-X007 PDF

    Untitled

    Abstract: No abstract text available
    Text: H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage FEATURES • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation A 1 6 B C


    Original
    H11D1/H11D2/H11D3/H11D4 i179004 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC H11D1/H11D2/H11D3/H11D4 18-Jul-08 PDF

    H11D3

    Abstract: DSA0011162
    Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original
    H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3/4 17-August-01 H11D3 DSA0011162 PDF

    H11D1

    Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
    Text: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 2.54 7.0


    Original
    H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 H11D2 H11D1 H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X PDF

    h11dx

    Abstract: No abstract text available
    Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


    Original
    H11DX H11D1 H11D2 H11D3 H11D4 H11D1, H11D2, H11D3, H11D4, E90700 PDF

    H11D1

    Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
    Text: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 6 1 2 5


    Original
    H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 DB91077m-AAS/A2 H11D1 H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X PDF

    H11D1

    Abstract: No abstract text available
    Text: 1 of 4 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 H11D1, H11D2, H11D3, H11D4 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics


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    H11D1, H11D2, H11D3, H11D4 H11D1-H11D4 H11D1-D3 H11D4 100ohm H11D1 PDF

    H11D3

    Abstract: No abstract text available
    Text: g y, , H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original
    H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3 H11D1/2/3/4 H11D3 PDF

    H11DX

    Abstract: 4N38 H11D1 H11D2 H11D3 H11D4 DSA00106336
    Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


    Original
    H11D1 H11D2 H11D3 H11D4 H11DX H11D1, H11D2, H11D3, H11D4, E90700 4N38 H11D1 H11D2 H11D3 H11D4 DSA00106336 PDF

    H11DX

    Abstract: H11D4.300 H11D12 4N38
    Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


    Original
    H11DX H11D1 H11D2 H11D3 H11D4 H11D1, H11D2, H11D3, H11D4, E90700 H11D4.300 H11D12 4N38 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


    Original
    H11D1 H11D2 H11D3 H11D4 H11DX H11D1, H11D2, H11D3, H11D4, E90700 PDF

    83611

    Abstract: NTCR 2.5 IEC60065 VDE0884
    Text: H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage FEATURES • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation A 1 6 B C


    Original
    H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, i179004 2002/95/EC 2002/96/EC H11D1/H11D2/H11D3/H11D4 08-Apr-05 83611 NTCR 2.5 IEC60065 VDE0884 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications_ HARRI S SEMICOND SECTOR 01E 4302271 37E Photon Coupled Isolator H11D1-H11D4 0G271ÖÖ A B C D E F G H J K V N P R S . rV i& absolute maximum ratings: 25°C W INFRARED EMITTING DIODE


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    H11D1-H11D4 0G271Ã 33mW/Â 92CS-42662 92CS-429S1 PDF

    VDE0303

    Abstract: No abstract text available
    Text: Infineon H11D1/H11D2/H11D3/H11D4 FEATURES CTR at / F=10 mA, BVCER=10 V: >20% Good CTR Linearity with Forward Current Low CTR Degradation Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCer =300 V - H11D3/H11D4, BVc e r=200 V Isolation Test Voltage: 5300 VRMS


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    H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 5mA10J 1-888-lnfineon 11D1/2/3/4 VDE0303 PDF

    C3883

    Abstract: GE H11D2 verin VDE0833 H11D1 GE
    Text: MOTOROLA B SEMICONDUCTOR TECHNICAL DATA H11D1 H11D2 H11D3 H11D4 6-Pin DIP Optoisolators Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e , s ilico n , p h o to tra n s is to r d e te cto rs in a sta n d a rd 6-pin DIP package. T hey are d esig n ed fo r


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    H11D1 H11D3 E54915 C3883 GE H11D2 verin VDE0833 H11D1 GE PDF

    11d2

    Abstract: No abstract text available
    Text: Optolsolator Specifications H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor The H11D1-H11D4 are gallium arsenide, infrared emitting diodes coupled with silicon high voltage phototransistors in a dual in-line package. These devices are also available in


    OCR Scan
    H11D1-H11D4 H11D1-H11D4 0110b 11d2 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISOCOfl COMPONENTS LTD 4886510 ISOCOH INC ?5C D • 4flflfc,51D Q00D172 5 2 7 75C 0 0 1 7 2 D H11D1 H11D2 H11D3 H11D4 ■ iso ¿ //- &B High Voltage Optically Coupled Isolators PACKAGE DIMENSIONS IN INCHES MM -I H 066 t t6.2000» rsc (6 10) • o o c^ L J l_l L J


    OCR Scan
    Q00D172 H11D1 H11D2 H11D3 H11D4 PDF

    LM 8105

    Abstract: SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t
    Text: [•a OPTOELECTRONICS P art N um ber PART NUM BER INDEX Page P art N um ber Page P art N um ber Page P art N um ber Page P art Num ber 1N6264 37 C N Y17F-3 13 G M A 8975 C 144 H11D4 14 H CPL-2730 1N6265 37 C N Y17F-4 13 G M C 2275 C 148 H11F1 20 Page _ 17


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    1N6264 1N6265 1N6266 6N135 6N136 6N137 6N138 6N139 740L6001 740L6010 LM 8105 SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t PDF

    H11DI

    Abstract: No abstract text available
    Text: Optoisolator Specifications H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor INCHES ftiiLU M E T E R : MIN MAX MIN MAX CCATINjr. T h e H I I D I -H 1 1 D 4 a r e gallium arse n id e , in fra re d em ittin g


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    H11D1-H11D4 H11DI PDF

    Untitled

    Abstract: No abstract text available
    Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVcer Voltage Optocoupler FEATURES Dimensions in inches mm • CTR at / F=1 O m A, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Em itter Breakdown Voltage


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    H11D1/H11D2/H11D3/H11D4 D3/H11 PDF

    Untitled

    Abstract: No abstract text available
    Text: ÛUALITY TECHNOLOGIES CORP S7E D • 74hLiB51 GOOMlRb TTb Optoisolator Specifications _ H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor * m il l im e t e r SYMBOL' A B C D «C ü T IK in


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    74hLiB51 H11D1-H11D4 1D1-H11D4 E51868 0110b PDF