IC Package Names and Code Designations
Abstract: data sheet IC 7408 7404 not gate ic MSP 044 THERMISTOR enplas otq-100-0.5 IC 7404 7406 IC51-1004-809 ic 7404 datasheet HLP40R ic 7408
Text: Hitachi Semiconductor Package DATA BOOK ADE 410-001A Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional capacity and higher density and developing packages
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10-001A
IC Package Names and Code Designations
data sheet IC 7408
7404 not gate ic
MSP 044 THERMISTOR
enplas otq-100-0.5
IC 7404 7406
IC51-1004-809
ic 7404 datasheet
HLP40R
ic 7408
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OPR 12 PHOTOCELL
Abstract: photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed
Text: Hitachi Optodevice Data Book ADE-408-001E Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In
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ADE-408-001E
HR1201CX
OPR 12 PHOTOCELL
photocell opr 12
HL7836MG
HE8807CL
cake power
hitachi HL7851G
HL7851
10G APD chip
"Hitachi, Ltd., 1997"
Hitachi laser diodes IR Pulsed
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HLP30RG
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS lflE D • 44^205 H LP20RG,H LP30RG,H LP40RG OOl Gñl b G a A IA s ¡R ED r-HH 3 Description H LP20RG , HLP30RG and HLP40RG are GaAIAs infrared em itting diodes with single heterojunction structure. T hey offer a wide range of wavelength and out
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LP20RG
LP30RG
LP40RG
LP20RG
HLP30RG
HLP40RG
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HLP30R
Abstract: HLP40R LP30R
Text: H LP20R, H LP30R, H LP40R IflE D Description HLP20R, HLP30R and HLP40R are GaAIAs infrared em itting diodes with single heterojunction structure. They offer a wide range o f wavelength and out put power, and are suitable for various types of optical equipm ent.
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LP20R,
LP30R,
LP40R
HLP20R,
HLP30R
HLP40R
44Tb205
HLP20R
LP30R
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LP30R
Abstract: I627
Text: HLP20R, HLP30R, HLP40R Infrared Emitting Diodes IRED Description H L P 2 0 R , H LP 30R and H LP 40R are G a A lA s infrared em itting diodes with single heterojunction structure. They offer a wide range o f wavelength and ou t put pow er, and are suitable for various types o f
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HLP20R,
HLP30R,
HLP40R
HLP40R
LP30R
I627
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HLP30RG
Abstract: No abstract text available
Text: HLP20RG, HLP30RG, HLP40RG Infrared Emitting Diodes IRED Description H LP20RG , H LP30RG and H LP40RG a re G a A lA s in fra re d e m ittin g d io d e s w ith s in g le h e te r o ju n c tio n s tru c tu re . T h e y o ffe r a w id e ra n g e o f w a v e le n g th a n d o u t
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HLP20RG,
HLP30RG,
HLP40RG
LP20RG
LP30RG
LP40RG
HLP20RG
HLP30RG
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HL7806
Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G
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HL6314M
HL6316G
HL6411G*
HL6315G
HL6312G
6313G
HL6720G
HL6724M
HL6712G
HL6722G
HL7806
6808X
L7851
hl7852
HL6411G
HL8325G
hitachi HL7852
hl7806g
HL7851
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30RG
Abstract: No abstract text available
Text: HLP20RG/30RG/40RG GaAIAs IRED Description The H L P 20R G /30R G /40R G are G aA IA s infrared light emitting diodes with a single heterojunction struc ture. They are suitable as light sources for a variety o f applied optical instruments. Features • High efficiency
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HLP20RG/30RG/40RG
HLP20RG
HLP30RG
HLP40RG
30RG
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HL7806
Abstract: L8311 mb 428 ic data HLP30RGD E8811 ART106 HLP30RG HL7836
Text: §4. Fundamental Characteristics 4.1 LD Fundamental Characteristics 4.1.1 Light vs. Current Characteristics under CW Operation One of the fundamental parameters o f LDs is optical-output-power vs. forward-current light vs. current characteristic. Figure 4-1 shows a measuring setup for light vs. current characteristic under CW operation.
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MAX785
Abstract: No abstract text available
Text: HLP20R/30R/40R GaAIAs IRED Description The HLP20R/30R/40R are GaAIAs infrared light emitting diodes with a single heterojunction structure. They are suitable as light sources for a variety o f applied optical instruments. Features • High efficiency • Wide selection o f wavelength and output power
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HLP20R/30R/40R
HLP20R/30R/40R
HLP20R:
HLP30R:
HLP40R:
HLP20R
HLP30R
HLP30R
MAX785
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HL7806
Abstract: HE8807CL HL7812G HE8811 HL7812 he130
Text: Package Variations Laser Diodes Packages Open-air type rar Features Applicable Products ’ For experimental use •For module assembly HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A ■For module assembly • Chip carrier stem HL1321AC, HL1322AC, HL1341AC,
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HLP5400,
HL1322A,
HL1341A,
HL1362A,
HL1521A,
HL1541A,
HL1551A
HL1321AC,
HL1322AC,
HL1341AC,
HL7806
HE8807CL
HL7812G
HE8811
HL7812
he130
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Untitled
Abstract: No abstract text available
Text: HLP20R/30R/40R GaAIAs IRED Description The HLP20R/30R/40R are GaAIAs infrared light emitting diodes with a single heterojunction structure. They are suitable as light sources for a variety of applied optical instruments. Features • High efficiency • Wide selection of wavelength and output power
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HLP20R/30R/40R
HLP20R/30R/40R
HLP20R:
HLP30R:
HLP40R:
44TLi2D5
LP20R/30R/40R
0G1443fl
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Untitled
Abstract: No abstract text available
Text: §3. Symbols and Definitions 3.1 The Absolute Maximum Ratings The absolute m axim um ratings specified in this data book are the values w hich should not be exceeded under any condition. They are defined at the case tem perature, Tc , of 25°C unless otherw ise specified.
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Untitled
Abstract: No abstract text available
Text: HLP20RG/30RG/40RG GaAIAs IRED Description The HLP20RG/30RG/40RG are GaAIAs infrared light emitting diodes with a single heterojunction structure. They are suitable as light sources for a variety of applied optical instruments. Features • High efficiency
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HLP20RG/30RG/40RG
HLP20RG/30RG/40RG
HLP20RG:
HLP30RG:
HLP40RG:
P40RG
HLP30RG
HLP40RG
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