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    OPR 12 PHOTOCELL

    Abstract: photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed
    Text: Hitachi Optodevice Data Book ADE-408-001E Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In


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    PDF ADE-408-001E HR1201CX OPR 12 PHOTOCELL photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed

    HLP30RG

    Abstract: No abstract text available
    Text: HITACHI/ OPTOELECTRONICS lflE D • 44^205 H LP20RG,H LP30RG,H LP40RG OOl Gñl b G a A IA s ¡R ED r-HH 3 Description H LP20RG , HLP30RG and HLP40RG are GaAIAs infrared em itting diodes with single heterojunction structure. T hey offer a wide range of wavelength and out­


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    PDF LP20RG LP30RG LP40RG LP20RG HLP30RG HLP40RG

    HLP30RG

    Abstract: No abstract text available
    Text: HLP20RG, HLP30RG, HLP40RG Infrared Emitting Diodes IRED Description H LP20RG , H LP30RG and H LP40RG a re G a A lA s in fra re d e m ittin g d io d e s w ith s in g le h e te r o ­ ju n c tio n s tru c tu re . T h e y o ffe r a w id e ra n g e o f w a v e le n g th a n d o u t ­


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    PDF HLP20RG, HLP30RG, HLP40RG LP20RG LP30RG LP40RG HLP20RG HLP30RG

    HL7806

    Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
    Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G


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    PDF HL6314M HL6316G HL6411G* HL6315G HL6312G 6313G HL6720G HL6724M HL6712G HL6722G HL7806 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851

    30RG

    Abstract: No abstract text available
    Text: HLP20RG/30RG/40RG GaAIAs IRED Description The H L P 20R G /30R G /40R G are G aA IA s infrared light emitting diodes with a single heterojunction struc­ ture. They are suitable as light sources for a variety o f applied optical instruments. Features • High efficiency


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    PDF HLP20RG/30RG/40RG HLP20RG HLP30RG HLP40RG 30RG

    HL7806

    Abstract: L8311 mb 428 ic data HLP30RGD E8811 ART106 HLP30RG HL7836
    Text: §4. Fundamental Characteristics 4.1 LD Fundamental Characteristics 4.1.1 Light vs. Current Characteristics under CW Operation One of the fundamental parameters o f LDs is optical-output-power vs. forward-current light vs. current characteristic. Figure 4-1 shows a measuring setup for light vs. current characteristic under CW operation.


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    HL7806

    Abstract: HE8807CL HL7812G HE8811 HL7812 he130
    Text: Package Variations Laser Diodes Packages Open-air type rar Features Applicable Products ’ For experimental use •For module assembly HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A ■For module assembly • Chip carrier stem HL1321AC, HL1322AC, HL1341AC,


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    PDF HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A HL1321AC, HL1322AC, HL1341AC, HL7806 HE8807CL HL7812G HE8811 HL7812 he130

    Untitled

    Abstract: No abstract text available
    Text: §3. Symbols and Definitions 3.1 The Absolute Maximum Ratings The absolute m axim um ratings specified in this data book are the values w hich should not be exceeded under any condition. They are defined at the case tem perature, Tc , of 25°C unless otherw ise specified.


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    Untitled

    Abstract: No abstract text available
    Text: HLP20RG/30RG/40RG GaAIAs IRED Description The HLP20RG/30RG/40RG are GaAIAs infrared light emitting diodes with a single heterojunction structure. They are suitable as light sources for a variety of applied optical instruments. Features • High efficiency


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    PDF HLP20RG/30RG/40RG HLP20RG/30RG/40RG HLP20RG: HLP30RG: HLP40RG: P40RG HLP30RG HLP40RG