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    HY51V18164B

    Abstract: hy51v18 HY51V16164B
    Text: HY51V18164B,HY51V16164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    PDF HY51V18164B HY51V16164B 1Mx16, 16-bit 1Mx16 hy51v18 HY51V16164B

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    Abstract: No abstract text available
    Text: • • H Y U N D A I * HY51V18164B,HY51V16164B > 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    PDF HY51V18164B HY51V16164B 1Mx16, 16-bit A0-A11) DQ0-DQ15)

    chqb

    Abstract: HY51V16164B
    Text: •HYUNDAI HY51V16164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y51V 16164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16164B utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques


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    PDF HY51V16164B 16-bit 16164B 16-bit. 42/42pin 1AD59-10-MAY95 0Q315 chqb

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    Abstract: No abstract text available
    Text: “HYUNDAI HY51V16164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y51V16164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16164B utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques


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    PDF HY51V16164B 16-bit Y51V16164B 16-bit. 42/42pin 4b75DÃ 1AD59-10-MAY95

    HY51V18164B

    Abstract: HY51V18164
    Text: • 'H Y U N D A I HY51V18164B, HY51V16164B 1M x 16bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode


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    PDF HY51V18164B, HY51V16164B 16bit HY51V18164BJC HY51V18164BSLJC HY51V18164BTC HY51V18164BSLTC HY51V16164BJC HY51V16164BSLJC HY51V16164BTC HY51V18164B HY51V18164

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    Abstract: No abstract text available
    Text: HYUNDAI HYM5V64204A X-Series 2M x 64-bit CMOS DRAM MODULE DESCRIPTION The HYM5V64204A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY51V16164B in 42/42 pin SOJ and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22nF


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    PDF HYM5V64204A 64-bit HY51V16164B 16-bit HYM5V64204AXG/ASLXG/ATXG/ASLTXG 1ED01-10-SEP95 A0-A11 DQ0-DQ63)

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process


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    PDF 1Mx16, 16-bit 1Mx16

    HYM5V64414

    Abstract: No abstract text available
    Text: As of ’96.3Q TYPE SIZE 8 -Byte 8M B DESCRIPTION. 1M x 64 EDO.SL D IM M PART HO. HYM5V64104AR/ATR SPEED REF. 60/70/80 4K H Y 51 V I6164BJ/BT x 4 IK HY51V18164BJ/BT x 4 IK HY51V18164BJ/BT x 4 HYM5V64124AR/ATR 1M x 72 Unbuffered EDO,SL,ECC HYM5V72A124AR/ATR


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    PDF HYM5V64104AR/ATR HYM5V64124AR/ATR HYM5V72A124AR/ATR HYM5V64204AR/ATR HYM5V64214AF/ATF HYM5V64224AR/ATR I6164BJ/BT HY51V18164BJ/BT HY51V4404BJ/BT HYM5V64414

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


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    PDF 256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


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    PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    HY5118164B

    Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
    Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B


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    PDF 16Mbit HY51V17404A HY51V17404B 300mil) 400mil) HY5118164B hy5118160b HY5118160 HY51V65400TC HY5117804B

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


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    PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ

    HY514260

    Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
    Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .


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    PDF HY531000A. HY534256A. 256Kx4-bit, HY512260. 128KX16-bit, HY514260 HY5118160 HY5116160 HY5117404 HY51V65400 HY511616

    d 100 d

    Abstract: Y514100A HYM532220
    Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"


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    PDF HYM5V64104AX/ATX HYM5V64124AX/ATX HYM5V64100AN/ATN HYM5V64100AX/ATX HYM5V64120AX/ATX HYMSV72103AN/ATN HYM5V72A100ATN HYM5V72A120ATX HY51V16164B HY51V18164BJ/BT d 100 d Y514100A HYM532220