HY51V18164B
Abstract: hy51v18 HY51V16164B
Text: HY51V18164B,HY51V16164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
|
Original
|
PDF
|
HY51V18164B
HY51V16164B
1Mx16,
16-bit
1Mx16
hy51v18
HY51V16164B
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process
|
OCR Scan
|
PDF
|
1Mx16,
16-bit
1Mx16
|
Untitled
Abstract: No abstract text available
Text: • • H Y U N D A I * HY51V18164B,HY51V16164B > 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
|
OCR Scan
|
PDF
|
HY51V18164B
HY51V16164B
1Mx16,
16-bit
A0-A11)
DQ0-DQ15)
|
HY51V18164B
Abstract: No abstract text available
Text: «HYUNDAI HY51V18164B Series 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques
|
OCR Scan
|
PDF
|
HY51V18164B
16-bit
16-bit.
04711-20Cf)
1AD60-10-MAY95
HY51V18164BJC
|
HY51V18164B
Abstract: No abstract text available
Text: H Y 51V 18164BSeries •HYUNDAI 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques
|
OCR Scan
|
PDF
|
16-bit
HY51V18164B
16-bit.
470C11
10X168}
4b750Ã
1AD60-10-MAY95
|
HY51V18164B
Abstract: HY51V18164
Text: • 'H Y U N D A I HY51V18164B, HY51V16164B 1M x 16bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode
|
OCR Scan
|
PDF
|
HY51V18164B,
HY51V16164B
16bit
HY51V18164BJC
HY51V18164BSLJC
HY51V18164BTC
HY51V18164BSLTC
HY51V16164BJC
HY51V16164BSLJC
HY51V16164BTC
HY51V18164B
HY51V18164
|
AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
|
OCR Scan
|
PDF
|
HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
|
HY5118164BJC
Abstract: HYM5V72A404 HY514404BJ HY5117404A
Text: QUICK REFERENCE DIMM MODULE 5V Unbuffered DIMM TYPE SIZE 168 Pin 8MB Unbuffered DIMM 16MB 32MB DESCRIPTION 1M X 64 EDO, SL PART NO. HYM564124AR/ATR SPEED REF. 60/70/80 DEVICE USED HEIGHT 1K HY5118164BJC/BTC x 4 S, 1" D, 1" S, 1" IM X 72 EDO, SL HYM572A124AR/ATR
|
OCR Scan
|
PDF
|
HYM564124AR/ATR
HYM572A124AR/ATR
HYM564224AR/ATR
HYM564214AF/ATF
HY5118164BJC/BTC
HY514404BJ/BT
HY5117804BJ/BT
HY5118164BJC
HYM5V72A404
HY514404BJ
HY5117404A
|