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Infineon Technologies AG IPU78CN10N-G MOSFET N-CH 100V 13A TO251-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPU78CN10N-G	Tube			1,500	1 - 10 - 100 - 1000 - 10000 $0.44331	Buy Now

IPU78CN10N Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IPU78CN10N G		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 13A TO251-3		Original	PDF
IPU78CN10NG		Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 13A TO251-3		Original	PDF

IPU78CN10N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
80CN10N Abstract: 78cn10n 80CN10 IPP80CN10NG IPU78CN10NG IPD78CN10N Text: IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)	Original	IPB80CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N 80CN10N 78cn10n 80CN10 IPP80CN10NG IPU78CN10NG	PDF
IPB79CN10NG Abstract: IPP80CN10NG 80CN10N diode marking f13 Text: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)	Original	IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N IPB79CN10NG IPP80CN10NG 80CN10N diode marking f13	PDF
80cn10n Abstract: IPD78CN10N IPP80CN10NG 78cn10n D1804 IPP80CN10N Text: IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)	Original	IPB80CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N 80cn10n IPP80CN10NG 78cn10n D1804	PDF
80CN10N Abstract: IPB79CN10NG IPP80CN10NG IPD78CN10N G 78cn10n Text: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 78 m: ID 13 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)	Original	IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N 80CN10N IPB79CN10NG IPP80CN10NG IPD78CN10N G 78cn10n	PDF
S 170 MOSFET TRANSISTOR Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and	Original	B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book	PDF