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    Rochester Electronics LLC IPP80CN10NGXKSA1

    PFET, 13A I(D), 100V, 0.08OHM, 1
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    DigiKey IPP80CN10NGXKSA1 Bulk 650
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    Infineon Technologies AG IPP80CN10NGHKSA1

    MOSFET N-CH 100V 13A TO220-3
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    DigiKey IPP80CN10NGHKSA1 Tube
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    Infineon Technologies AG IPP80CN10NGXKSA1

    Trans MOSFET N-CH 100V 13A 3-Pin(3+Tab) TO-220 Tube
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    Verical IPP80CN10NGXKSA1 5,891 750
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    Rochester Electronics IPP80CN10NGXKSA1 5,891 1
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    Infineon Technologies AG IPP80CN10N

    OPTIMOS2 POWER-TRANSISTOR Power Field-Effect Transistor, 13A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA IPP80CN10N 359
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    IPP80CN10N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPP80CN10N Infineon Technologies OptiMOS 2 Power-Transistor Original PDF
    IPP80CN10N G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 100.0 V; RDS (on) (max) (@10V): 78.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 13.0 A; Original PDF
    IPP80CN10NGHKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 13A TO-220 Original PDF

    IPP80CN10N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    80CN10N

    Abstract: 78cn10n 80CN10 IPP80CN10NG IPU78CN10NG IPD78CN10N
    Text: IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB80CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N 80CN10N 78cn10n 80CN10 IPP80CN10NG IPU78CN10NG PDF

    IPB79CN10NG

    Abstract: IPP80CN10NG 80CN10N diode marking f13
    Text: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N IPB79CN10NG IPP80CN10NG 80CN10N diode marking f13 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 78 mW ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IEC61249-2-21 PG-TO263-3 PDF

    to262 pcb footprint

    Abstract: D1804 IPB79CN10NG IPP80CN10NG IPD78CN10N 80CN10N IPP80CN10N 80CN10
    Text: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N PG-TO263-3 PG-TO252-3 to262 pcb footprint D1804 IPB79CN10NG IPP80CN10NG 80CN10N 80CN10 PDF

    80cn10n

    Abstract: IPD78CN10N IPP80CN10NG 78cn10n D1804 IPP80CN10N
    Text: IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB80CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N 80cn10n IPP80CN10NG 78cn10n D1804 PDF

    D1804

    Abstract: IPB79CN10NG IPP80CN10NG 80CN10N IPD78CN10N IPP80CN10N US101I
    Text: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N PG-TO263-3 PG-TO252-3 D1804 IPB79CN10NG IPP80CN10NG 80CN10N US101I PDF

    80CN10N

    Abstract: IPB79CN10NG IPP80CN10NG IPD78CN10N G 78cn10n
    Text: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 78 m: ID 13 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N 80CN10N IPB79CN10NG IPP80CN10NG IPD78CN10N G 78cn10n PDF

    79CN10N

    Abstract: 80CN10N IPB79CN10NG IPP80CN10NG TO252 IEC61249-2-21 IPD78CN10N IPP80CN10N D1804 78cn10n
    Text: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IEC61249-2-21 PG-TO263-3 79CN10N 80CN10N IPB79CN10NG IPP80CN10NG TO252 IEC61249-2-21 D1804 78cn10n PDF

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book PDF

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 PDF

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP PDF