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    80CN10N Price and Stock

    Infineon Technologies AG IPI80CN10N-G

    MOSFET N-CH 100V 13A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPI80CN10N-G Tube 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.63792
    • 10000 $0.63792
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    Rochester Electronics LLC IPP80CN10NGXKSA1

    PFET, 13A I(D), 100V, 0.08OHM, 1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP80CN10NGXKSA1 Bulk 650
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.46
    • 10000 $0.46
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    Infineon Technologies AG IPP80CN10NGHKSA1

    MOSFET N-CH 100V 13A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP80CN10NGHKSA1 Tube
    • 1 -
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    Infineon Technologies AG IPP80CN10NGXKSA1

    IPP80CN10 - 13A, 100V, 0.08ohm, N-Channel MOSFET, TO-220AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPP80CN10NGXKSA1 5,891 1
    • 1 $0.4444
    • 10 $0.4444
    • 100 $0.4177
    • 1000 $0.3777
    • 10000 $0.3777
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    Infineon Technologies AG IPI80CN10NG

    IPI80CN10 - Power Field-Effect Transistor, 13A, 100V, N-Channel, MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPI80CN10NG 400 1
    • 1 $0.5417
    • 10 $0.5417
    • 100 $0.5092
    • 1000 $0.4604
    • 10000 $0.4604
    		Buy Now
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    80CN10N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    80CN10N

    Abstract: 78cn10n 80CN10 IPP80CN10NG IPU78CN10NG IPD78CN10N
    Text: 80CN10N G IPD78CN10N G 80CN10N G 80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB80CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N 80CN10N 78cn10n 80CN10 IPP80CN10NG IPU78CN10NG PDF

    IPB79CN10NG

    Abstract: IPP80CN10NG 80CN10N diode marking f13
    Text: IPB79CN10N G IPD78CN10N G 80CN10N G 80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N IPB79CN10NG IPP80CN10NG 80CN10N diode marking f13 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB79CN10N G IPD78CN10N G 80CN10N G 80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 78 mW ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IEC61249-2-21 PG-TO263-3 PDF

    to262 pcb footprint

    Abstract: D1804 IPB79CN10NG IPP80CN10NG IPD78CN10N 80CN10N IPP80CN10N 80CN10
    Text: IPB79CN10N G IPD78CN10N G 80CN10N G 80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N PG-TO263-3 PG-TO252-3 to262 pcb footprint D1804 IPB79CN10NG IPP80CN10NG 80CN10N 80CN10 PDF

    80cn10n

    Abstract: IPD78CN10N IPP80CN10NG 78cn10n D1804 IPP80CN10N
    Text: 80CN10N G IPD78CN10N G 80CN10N G 80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB80CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N 80cn10n IPP80CN10NG 78cn10n D1804 PDF

    D1804

    Abstract: IPB79CN10NG IPP80CN10NG 80CN10N IPD78CN10N IPP80CN10N US101I
    Text: IPB79CN10N G IPD78CN10N G 80CN10N G 80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N PG-TO263-3 PG-TO252-3 D1804 IPB79CN10NG IPP80CN10NG 80CN10N US101I PDF

    80CN10N

    Abstract: IPB79CN10NG IPP80CN10NG IPD78CN10N G 78cn10n
    Text: IPB79CN10N G IPD78CN10N G 80CN10N G 80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 78 m: ID 13 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N 80CN10N IPB79CN10NG IPP80CN10NG IPD78CN10N G 78cn10n PDF

    79CN10N

    Abstract: 80CN10N IPB79CN10NG IPP80CN10NG TO252 IEC61249-2-21 IPD78CN10N IPP80CN10N D1804 78cn10n
    Text: IPB79CN10N G IPD78CN10N G 80CN10N G 80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IEC61249-2-21 PG-TO263-3 79CN10N 80CN10N IPB79CN10NG IPP80CN10NG TO252 IEC61249-2-21 D1804 78cn10n PDF