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    Infineon Technologies AG IPB79CN10N-G

    MOSFET N-CH 100V 13A D2PAK
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    DigiKey IPB79CN10N-G Reel 1,000
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    IPB79CN10NG

    Abstract: IPP80CN10NG 80CN10N diode marking f13
    Text: 79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N IPB79CN10NG IPP80CN10NG 80CN10N diode marking f13 PDF

    Untitled

    Abstract: No abstract text available
    Text: 79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 78 mW ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IEC61249-2-21 PG-TO263-3 PDF

    to262 pcb footprint

    Abstract: D1804 IPB79CN10NG IPP80CN10NG IPD78CN10N 80CN10N IPP80CN10N 80CN10
    Text: 79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N PG-TO263-3 PG-TO252-3 to262 pcb footprint D1804 IPB79CN10NG IPP80CN10NG 80CN10N 80CN10 PDF

    D1804

    Abstract: IPB79CN10NG IPP80CN10NG 80CN10N IPD78CN10N IPP80CN10N US101I
    Text: 79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N PG-TO263-3 PG-TO252-3 D1804 IPB79CN10NG IPP80CN10NG 80CN10N US101I PDF

    80CN10N

    Abstract: IPB79CN10NG IPP80CN10NG IPD78CN10N G 78cn10n
    Text: 79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 78 m: ID 13 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IPU78CN10N 80CN10N IPB79CN10NG IPP80CN10NG IPD78CN10N G 78cn10n PDF

    79CN10N

    Abstract: 80CN10N IPB79CN10NG IPP80CN10NG TO252 IEC61249-2-21 IPD78CN10N IPP80CN10N D1804 78cn10n
    Text: 79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)


    Original     		IPB79CN10N IPD78CN10N IPI80CN10N IPP80CN10N IEC61249-2-21 PG-TO263-3 79CN10N 80CN10N IPB79CN10NG IPP80CN10NG TO252 IEC61249-2-21 D1804 78cn10n PDF