Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRFS731 Search Results

    IRFS731 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS731 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS731 Unknown FET Data Book Scan PDF
    IRFS731 Samsung Electronics N-Channel Power MOSFET Scan PDF
    IRFS731 Samsung Electronics N-Channel Power MOSFETS Scan PDF

    IRFS731 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFS731 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)3.5 I(DM) Max. (A) Pulsed I(D)2.0 @Temp (øC)100# IDM Max (@25øC Amb)32 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)35 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFS731

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent

    IRFS730

    Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 IRFS730/731/732/733 DDlTBbl 777 «SPIC K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF 7Rb414B IRFS730/731/732/733 to-220f IRFS730/731 /732Z733 IRFS730 IRFS731 IRFS732 IRFS733 733 mosfet 731 MOSFET IR 733 0D173

    1RFS730

    Abstract: IRFS640 1rfs634 IRFS830 IRFS541 IRFS643 samsung IRFS632 IRFS634 1rfs63
    Text: - m % tt f ft * t Vd s or € i % £ Vg s Id Id s s Ig s s Pd Vgs th ft $a 4# Ü Ds on) Vd s = '14 * /CU (V) (A) min * /CH (W) (nA) Vg s (V) (HA) Vd s (V) Ciss g fs iD(on) C oss Crss (V) (V) ft B m m V g s =0 (max) max Id *typ (mA) (0) Vg s (V) Id (A) *typ


    OCR Scan     		PDF Ta-25CC) Ta-25Â IRFS532 O-220 IRFS533 1BFS540 IRFS541 1RFS542 1RFS730 IRFS640 1rfs634 IRFS830 IRFS643 samsung IRFS632 IRFS634 1rfs63

    SSS60N

    Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
    Text: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00


    OCR Scan     		PDF O-220 IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 IRFSZ24 SSS15N06 IRFSZ34 SSS60N sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830

    GR 733

    Abstract: IR 733
    Text: N-CHANNEL POWER MOSFETS IRFS730/731/732/733 FEATURES TO-220F • Low er Rds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRFS730/731/732/733 O-220F IRFS730 IRFS731 IRFS732 IRFS733 GR 733 IR 733

    IRFS730

    Abstract: 731 MOSFET 250M IRFS731 L17M
    Text: N-CHANNEL POWER MOSFETS IRFS730/731 FEATURES • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRFS730/731 IRFS730 IRFS731 to-220 731 MOSFET 250M L17M

    IRFS540

    Abstract: IRFS541 irfsz22 IRFS634 irfs630 IRFS522
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL BVdss V Part Number ID(onXA) RDS(onXß) 14.00 15.00 25.00 30.00 35.00 35.00 0.120 0.100 0.070 0.050 0.035 0.028 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 60.00 14.00 15.00 25.00 30.00 35.00


    OCR Scan     		PDF O-220 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 IRFSZ25 IRFSZ24 IRFSZ35 IRFS540 IRFS541 IRFS634 irfs630 IRFS522

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1