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IXYS Corporation IXGH32N170A IGBT 1700V 32A 350W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH32N170A	Tube	950		1	1 $22.17 10 $22.17 100 $14.03733 1000 $12.77608 10000 $12.77608	Buy Now
Mouser Electronics	IXGH32N170A		300			1 $21.18 10 $21.17 100 $17.15 1000 $17.15 10000 $17.15	Buy Now
TTI	IXGH32N170A	Tube			300	1 - 10 - 100 - 1000 $16.64 10000 $16.64	Buy Now
TME	IXGH32N170A				1	1 $28.36 10 $22.55 100 $20.32 1000 $20.32 10000 $20.32	Get Quote
IXYS Corporation IXGH32N120A3 IGBT 1200V 75A 300W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH32N120A3	Tube	359		1	1 $12.46 10 $8.683 100 $6.5425 1000 $6.08712 10000 $6.08712	Buy Now
Mouser Electronics	IXGH32N120A3		1			1 $11.77 10 $8.69 100 $8.69 1000 $6.08 10000 $6.08	Buy Now
Bristol Electronics	IXGH32N120A3		25			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	IXGH32N120A3	Tube			300	1 - 10 - 100 - 1000 $8.12 10000 $8.12	Buy Now
TME	IXGH32N120A3				1	1 $11.45 10 $9.6 100 $8.95 1000 $7.35 10000 $6.96	Get Quote
IXYS Corporation IXGH32N170 IGBT 1700V 75A 350W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH32N170	Tube			1	1 $20.21 10 $20.21 100 $16.359 1000 $13.95331 10000 $13.95331	Buy Now
Mouser Electronics	IXGH32N170		6			1 $20.62 10 $20.62 100 $16.36 1000 $15.73 10000 $15.73	Buy Now
TTI	IXGH32N170	Tube	300		30	1 - 10 - 100 $16.52 1000 $16.52 10000 $16.52	Buy Now
TME	IXGH32N170		7		1	1 $27.13 10 $21.44 100 $19.31 1000 $19.31 10000 $19.31	Buy Now
IXYS Corporation IXGH32N60C IGBT 600V 60A 200W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH32N60C	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXGH32N60C		60			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IXGH32N60C		48			1 $25.5 10 $25.5 100 $21.675 1000 $21.675 10000 $21.675	Buy Now
IXYS Corporation IXGH32N60B IGBT 600V 60A 200W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH32N60B	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IXGH32 Datasheets (24)

Part	Manufacturer	Description	Type	PDF
IXGH32N100A3	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1000V 75A 300W TO247AD	Original	PDF
IXGH32N120A3	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 75A 300W TO247	Original	PDF
IXGH32N170	IXYS	Low Saturation Voltage Types	Original	PDF
IXGH 32N170	IXYS	High Voltage IGBT	Original	PDF
IXGH32N170A	IXYS	High Voltage IGBT	Original	PDF
IXGH32N170A	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 32A 350W TO247	Original	PDF
IXGH 32N170A	IXYS	TRANS IGBT CHIP N-CH 1700 at TJ=25C TO 150CV 32A TO-247 AD	Original	PDF
IXGH32N50B	IXYS	Hiperfast IGBT	Original	PDF
IXGH32N50BS	IXYS	HiPerFAST IGBT	Original	PDF
IXGH32N50BU1	IXYS	Hiperfast IGBT With Diode Combi Pack	Original	PDF
IXGH32N50BU1S	IXYS	HiPerFAST IGBT with Diode Combi Pack	Original	PDF
IXGH32N60A	IXYS	600V HiPerFAST IGBT	Original	PDF
IXGH32N60AA	IXYS	600V HiPerFAST IGBT	Original	PDF
IXGH32N60AS	IXYS	600V HiPerFAST IGBT	Original	PDF

IXGH32N60AU1	IXYS	Hiperfast IGBT With Diode Combi Pack	Original	PDF
IXGH32N60AU1S	IXYS	HiPerFAST IGBT with Diode Combi Pack	Original	PDF
IXGH32N60B	IXYS	IGBT for AC motor speed control and DC servo and robot drives applications, 600V, 60A, 80ns	Original	PDF
IXGH32N60BD1	IXYS	600V HiPerFAST IGBT with diode	Original	PDF
IXGH32N60BD1	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 200W TO247AD	Original	PDF
IXGH32N60BU1	IXYS	IGBT for AC motor speed control and DC servo and robot drives applications, 600V, 60A, 80ns	Original	PDF

IXGH32 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 32A VCE sat ≤ 2.35V IXGH32N120A3 IXGT32N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IC110 IXGH32N120A3 IXGT32N120A3 O-268 O-247 32N120A3 3-04-11-A
IXGH32N60BU1 Abstract: No abstract text available Text: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V = = = = 600 V 60 A 2.5V 80 ns TO-247 AD VGES Continuous ±20 V VGEM Transient	Original	PDF	IXGH32N60BU1 O-247 IXGH32N60BU1
IXGH32N60B Abstract: No abstract text available Text: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM	Original	PDF	IXGH32N60B O-247 32N60B 32N60BU1 IXGH32N60B
Untitled Abstract: No abstract text available Text: IXGH32N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)60# Absolute Max. Power Diss. (W)200# Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.62 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.15	Original	PDF	IXGH32N60AU1 delay25nÃ time30nÃ time175n
Untitled Abstract: No abstract text available Text: Advance Technical Information GenX3TM 1000V IGBT IXGH32N100A3 IXGT32N100A3 VCES = 1000V IC25 = 75A VCE sat ≤ 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions VCES TC = 25°C to 150°C VCGR Maximum Ratings 1000	Original	PDF	IXGH32N100A3 IXGT32N100A3 O-247 O-268 IC110 338B2
IXGH32N50BU1 Abstract: IXGH32N50BU1S Text: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE sat tfi = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) IXGH32N50BU1 IXGH32N50BU1S
IXGH32N60B Abstract: 32N60BU1 32N60B 95566B IXGH32N60 TO-247 AD Text: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM	Original	PDF	IXGH32N60B O-247 32N60B 32N60BU1 IXGH32N60B 95566B IXGH32N60 TO-247 AD
IXGH32N50B Abstract: IXGH32N50BS Text: Preliminary Data Sheet IXGH32N50B VCES IXGH32N50BS I C25 VCE sat tfi HiPerFASTTM IGBT = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 500 V	Original	PDF	IXGH32N50B IXGH32N50BS O-247 32N50BS) IXGH32N50B
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Maximum Ratings = = = = 600 V 60 A 2.5V 80 ns TO-247 AD Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	IXGH32N60BU1 O-247
IXGT32N100A3 Abstract: IXGH32N100 GenX3TM IXGH32N100A3 Text: Advance Technical Information GenX3TM 1000V IGBT IXGH32N100A3 IXGT32N100A3 VCES = 1000V = 75A IC25 VCE sat ≤ 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions VCES TC = 25°C to 150°C VCGR Maximum Ratings 1000	Original	PDF	IXGH32N100A3 IXGT32N100A3 O-247 O-268 IC110 338B2 IXGT32N100A3 IXGH32N100 GenX3TM IXGH32N100A3
BC 247 B Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM Text: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25	OCR Scan	PDF	IXGH32N60CD1 IXGH32N60CD1S O-247 32N60CD1S) BC 247 B IXGH32N60 DIODE SMD GEM
IXGH32N60C Abstract: 610MJ Text: Advanced Data _ HiPerFAST IGBT Lightspeed™ Series vCES IXGH32N60C IXGH32N60CS 600 V 60 A 2.1 V 55 ns ^C25 vCE sat typ * fi typ 4 Symbol Test Conditions V • ces TJ vcaR C Maximum Ratings 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 M£3	OCR Scan	PDF	IXGH32N60C IXGH32N60CS O-247 32N60CS) O-247AD O-247 610MJ
Untitled Abstract: No abstract text available Text: □ IXYS P re lim in a ry D ata S heet IXGH32N50B IXGH32N50BS HiPerFAST IGBT V CES ^C25 V CE sat t 'fi 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) m Symbol Test Conditions V CES Ta = 2 5 C to 150 C 500 V V ¥cgr T j = 2 5 C to 150 C; RGE= 1 M 500 V V v GES	OCR Scan	PDF	IXGH32N50B IXGH32N50BS O-247 32N50BS)
diode lt 247 Abstract: IXGH32N60 Text: ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode v 600 V 60 A 2.1V 55 ns CES ^C25 v CE sat typ ^fl(typ) Light Speed Series Symbol Test Conditions V CES ^ Vco* Tj = 25°C to 150°C; V « Maximum Ratings = 25°C to 150°C	OCR Scan	PDF	IXGH32N60CD1 IXGH32N60CD1S O-247 32N60CD1S) diode lt 247 IXGH32N60

IXGH32N60C Abstract: No abstract text available Text: □ IXYS HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS VCES IC25 V CE sat typ tfity p 600 V 60 A 2.1 V 55 ns Prelim inary Data Sheet Symbol TestConditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	PDF	IXGH32N60C IXGH32N60CS O-247
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S Hi Per FAST IGBT with Diode Combi Pack V CES ^C25 v CE sat K 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions v CES Td = 25°C to 150°C V C3R T.J = 25°C to 150°C; RrF bb V eES V GEM	OCR Scan	PDF	IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S)
1xgh32 Abstract: IXGH32N60B Text: Preliminary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 VCE sat t, Symbol Test Conditions V OES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 MO 600 V VGES Continuous ±20 V V OEM Transient ±30 V 60 A ^C90 Tc = 25°C Tc = 90°C	OCR Scan	PDF	IXGH32N60B IXGH32N60BS T0-247 32N60BS) 1xgh32
32N60B Abstract: 32N60A N60B DIXYS IXGH32N60B Text: DIXYS HiPerFAST IG BT IXGH 32 N60A IXGH32 N60B VCES ^C25 VCE sat tfi 600 V 600 V 60 A 60 A 2.9 V 2.5 V 125 ns 80 ns Prelim inary data ÔE Sym bol Test C onditions Maximum Ratings V t ces Tj = 25°C to 150°C 600 V vt c g r Tj = 25°C to 150°C; RGE = 1 MQ	OCR Scan	PDF	IXGH32 O-247 32N60A 32N60B 32N60B N60B DIXYS IXGH32N60B
32N60B Abstract: 32N60BU1 IXGH32N60B Text: □IX Y S j Prelim inary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 V CE sat tfi < Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v* GES v GEM Continuous ±20 V T ransient ±30 V Maximum Ratings	OCR Scan	PDF	IXGH32N60B IXGH32N60BS 13/IONm/lb O-247 4bflb22b 32N60B 32N60BU1
smd diode UJ 64 A Abstract: cz 017 v3 Text: □IX Y S Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode tfi Test Conditions VCES Tj = 25 °C to 150°C 600 V V CGR Tj = 25 °C to 150°C; RGE = 1 M ii 600 V v GES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25 °C ^C90	OCR Scan	PDF	IXGH32N60BU1 IXGH32N60BU1S O-247 4bflb22b smd diode UJ 64 A cz 017 v3
MJI-25 Abstract: No abstract text available Text: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2	OCR Scan	PDF	IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) MJI-25
TT 2146 Abstract: 3em smd 1520S smd 3EM Text: Preliminary Data Sheet IXGH32N50B IXGH32N50BS Hi Per FAST IGBT V C ES IC25 V CE sat 500 V 60 A 2.0 V 80 ns T 0 -2 4 7 SMD (32N 50B S ) Symbol TestC onditions v CES Td = 2 5 °C to 1 5 0 °C 500 V V CGR Td = 25°C to 150°C; RGE = 1 M il 500 V V GES Continuous	OCR Scan	PDF	IXGH32N50B IXGH32N50BS TT 2146 3em smd 1520S smd 3EM
ixgh32n60 Abstract: MJ170 Text: HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS v CES ^C25 VCE sat typ ^fity p 600 V 60 A 2.1 V 55 ns Preliminary Data Sheet Symbol Test Conditions ^C E S Tj = 25°C to 150°C 600 V T j = 25°C to 150°C; RGE = 1 MQ 600 V v CGR Maximum Ratings	OCR Scan	PDF	IXGH32N60C IXGH32N60CS O-247 32N60CS) ixgh32n60 MJ170
n60b Abstract: n60bu 32N60A Text: DIXYS HiPerFAST IGBT with Diode IXGH32 N60AU1 IXGH32 N60AU1S IXGH32 N60BU1S Combi Pack VCES ^C25 VCE sat tfi 600 V 600 V 600 V 60 A 60 A 60 A 2.9 V 2.9 V 2.5 V 125 ns 125 ns 80 ns Prelim inary data Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C	OCR Scan	PDF	IXGH32 N60AU1 N60AU1S N60BU1S O-247 32N60 32N60AU1) n60b n60bu 32N60A

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IXGH32 Price and Stock

IXYS Corporation IXGH32N170A

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IXYS Corporation IXGH32N60B

IXGH32 Datasheets (24)

IXGH32 Datasheets Context Search

Untitled

IXGH32N60BU1

IXGH32N60B

Untitled

Untitled

IXGH32N50BU1

IXGH32N60B

IXGH32N50B

Untitled

IXGT32N100A3

BC 247 B

IXGH32N60C

Untitled

diode lt 247

IXGH32N60C

Untitled

1xgh32

32N60B

32N60B

smd diode UJ 64 A

MJI-25

TT 2146

ixgh32n60

n60b